Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes

A UV-imprinting process for a full wafer was developed to enhance the light extraction of GaN-based green light-emitting diodes (LEDs). A polyvinyl chloride flexible stamp was used in the imprinting process to compensate for the poor flatness of the LED wafer. Two-dimensional photonic crystal patterns with pitches ranging from 600 to 900 nm were formed on the p-GaN top cladding layer of a 2 inch diameter wafer using nanoimprint and reactive ion etching processes. As a result, the optical output power of the patterned LED device was increased by up to 44% at a driving current of 20 mA by suppressing the total internal reflection and enhancing the irregular scattering of photons at the patterned p-GaN surface.     

Effect of plasma treatment on surface chemical-bonding states and electrical properties of polyacrylonitrile nanofibers

Electrospun polyacrylonitrile (PAN) nanofibers were subjected to surface modification by atmospheric pressure (AP) plasma treatment with reactive gases. There was no damage to the surfaces after this plasma treatment, and no significant changes were observed in the morphologies of the nanofibers. The surface energies of O₂- and N₂-plasma-treated PAN (abbreviated as OPP and NPP, respectively) nanofibers increased by almost 138.7% and 190.6%, respectively, in comparison with that of an untreated nanofiber (256.6 mJ/m²). The binding energies of both OPP and NPP samples increased through the formation of many hydrophilic bonds involving oxygen. The current-voltage (I-V) characteristics of the nanofibers were determined for the different reactive gases, and the plasma-treated nanofibers showed higher protein immobilization compared to the untreated ones. This result indicates that electrospun PAN nanofibers have the potential to be used in protein biosensor systems.     

Effects of photoirradiation in UV and VUV regions during plasma exposure to polymers

Interactions between photons irradiated from Ar-O₂ mixture plasmas and polymer surfaces were investigated on the basis of depth analyses of chemical bonding states in the nano-surface layer of polyethylene terephthalate (PET) films via hard X-ray photoelectron spectroscopy (HXPES) and conventional X-ray photoelectron spectroscopy (XPS). The PET films were exposed to photons from the Ar-O₂ mixture plasmas by covering the PET samples with MgF₂ and quartz windows as optical filters for evaluation of photoirradiation effects in ultraviolet (UV) and vacuum ultraviolet (VUV) regions. The HXPES results indicated that the degradation of the chemical bonding states due to photoirradiation in regions was insignificant in deeper regions up to about 50 nm from the surface. Whereas, conventional XPS analysis showed that CO bond, OCO bond and CO bond increased after photoirradiation in UV and VUV regions. These results suggest that the increase in oxygen functionalities (CO bond, OCO bond and CO bond) may be attributed to chemical reactions and/or terminations of scissed bonds via photodecompositions of the polymer with oxygen and/or OH species (oxygen molecules and radicals during plasma exposure and/or oxygen molecules and moisture after taking the PET samples out of the plasma reactor to the ambient air) in the vicinity of the sample surface.     

Fast release process of metal structure using chemical dry etching of sacrificial Si layer

An ultra-fast removal process of a silicon sacrificial layer for the selective release of a metal structure on a Si substrate was studied, which uses a chemical dry etching method. The chemical dry etching of a Si layer was performed in an NF₃ remote plasma with the direct injection of additive nitric oxide (NO) gas. When the NO gas was injected into the chamber into which F radicals were supplied from a remote plasma source using NF₃ input gas, the silicon layer was removed selectively and the metal structure could be released easily. It was found that the etch rate on the sidewall (up to ≅ 18.7 μm/min for an opening width of 100 μm) and the bottom (up to ≅ 24.5 μm/min for an opening width of 100 μm) depends on the NO/(NO + Ar) gas flow ratio, time duration, and opening width. The developed dry etching process could be used to release a Ni structure with near infinite selectivity in a very short time. The process is well suited for fabricating various devices which require a suspended structure, such as in radio-frequency microelectromechanical system switches, tunable capacitors, high-Q suspended inductors and suspended-gate metal-oxide semiconductor field-effect transistors.     

Experimental and numerical studies for the forming groove and separating groove design in slit rolling process

This paper presents a design method of the forming groove-to-separating groove rolling sequence used in slit rolling process. Based on the equivalent rectangle approximation, we have designed the forming groove which produces a peanut-shaped cross section via rolling from workpiece with an inlet (incoming) square cross section. The separating groove is designed by lowering its width and height in the ratio of 1:3 for the given reduction ratio. With the forming groove and separating groove designed by the proposed design method, we have performed a pilot rolling test at high temperature (around 1000°C) using low carbon (0.1%C) steel and have also carried out finite element analysis to examine the expansibility of the proposed design method. The Results reveal that if the ratio of the roll diameter over the side length of a square is in the range of 4.0 ∼ 8.0, the design method proposed in this study can be systematically applied to design the forming groove-to-separating groove without relying on in-house databases and/or on-site experience.     

A dead reckoning localization system for mobile robots using inertial sensors and wheel revolution encoding

Inertial navigation systems (INS) are composed of inertial sensors, such as accelerometers and gyroscopes. An INS updates its orientation and position automatically; it has an acceptable stability over the short term, however this stability deteriorates over time. Odometry, used to estimate the position of a mobile robot, employs encoders attached to the robot’s wheels. However, errors occur caused by the integrative nature of the rotating speed and the slippage between the wheel and the ground. In this paper, we discuss mobile robot position estimation without using external signals in indoor environments. In order to achieve optimal solutions, a Kalman filter that estimates the orientation and velocity of mobile robots has been designed. The proposed system combines INS and odometry and delivers more accurate position information than standalone odometry.     

Advancing assessment and design of stormwater monitoring programs using a self-organizing map: characterization of trace metal concentration profiles in stormwater runoff

Stormwater runoff poses a great challenge to the scientific assessment of the effects of diffuse pollution sources on receiving waters. In this study, a self-organizing map (SOM), a research tool for analyzing specific patterns in a large array of data, was applied to the monitoring data obtained from a stormwater monitoring survey to acquire new insights into stream water quality profiles under different rainfall conditions. The components of the input data vectors used by the SOM included concentrations of 10 metal elements, river discharge, and rainfall amount which were collected at the inlet and endpoint of an urban segment of the Yeongsan River, Korea. From the study, it was found that the SOM displayed significant variability in trace metal concentrations for different monitoring sites and rainfall events, with a greater impact of stormwater runoff on stream water quality at the upstream site than at the downstream site, except under low rainfall conditions (≤4 mm). In addition, the SOM clearly determined the water quality characteristics for “non-storm” and “storm” data, where the parameters nickel and arsenic and the parameters chromium, cadmium, and lead played an important role in reflecting the spatial and temporal water quality, respectively. When the SOM was used to examine the efficacy of stormwater quality monitoring programs, between 34 and 64% of the sample size in the current data set was shown to be sufficient for estimating the stormwater pollutant loads. The observed errors were small, generally being below 10, 6, and 20% for load estimation, map resolution, and clustering accuracy, respectively. Thus, the method recommended may be used to minimize monitoring costs if both the efficiency and accuracy are further determined by examining a large existing data set.     

Directed self-assembly of organic semiconductors via confined evaporative capillary flows for use in organic field-effect transistors

We fabricated well-defined 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) crystal arrays for use in electronic applications via a simple but effective method, the confined evaporative capillary flow (CEC) method. This has been accomplished by systematically controlling the contact line pinning at the edge of glass stylus and the outward hydrodynamic flow within the drying droplet with various processing solvents and surface properties of the substrate during solidification. We found that after CEC coating of TIPS-PEN solution dissolved into toluene onto SiO₂ surface, ribbon-shaped TIPS-PEN crystals were well developed with a width of 20–100 μm and length of 300 μm – 2 mm, which is presumably owing to optimized capillary evaporation. Specifically, TIPS-PEN crystals present highly preferred crystal orientation along the (l 0 0) axis, which can lead to efficient charge transport in a lateral direction. Thus, TIPS-PEN field-effect transistors (FETs) exhibited a good hole mobility of 0.72 cm²/Vs.     

Versatile threshold voltage control of OTFTs via discontinuous pn-heterojunction formation

We demonstrate the versatility of the threshold voltage control for organic thin-film transistors (OTFTs) based on formation of discontinuous pn-heterojunction on the active channel layer. By depositing n-type dioctyl perylene tetracarboxylic diimide molecules discontinuously onto base p-type pentacene thin films (the formation of the discontinuous pn-heterojunction), a positive shift of the threshold voltage was attained which enabled realizing a depletion-mode transistor from an original enhancement-mode pristine pentacene transistor. Careful control of the threshold voltage based on this method led assembling a depletion-load inverter comprising a depletion-mode transistor and an enhancement-mode transistor connected in series that yielded tunable signal inversion voltage approaching 0 V. In addition, the tunability could be applied to improve the program/erase signal ratio for non-volatile transistor memories by more than 4 orders of magnitude compared to reference memory devices made of pristine pentacene transistors.