分子筛吸附器进水故障及其处理过程

KDONAr-10000／22000／370型空分设备因空冷塔液位计失效而发生分子筛吸附器进水故障。介绍了故障发生的经过和处理过程；最后得出了发现及处理分子筛吸附器进水故障的经验和教训。     

十三年拼搏树正元品牌 与时俱进出精品创一流

河北正元包装集团有限公司地处河北迁安市。十几年的风雨沧桑，正元人靠自已的双手和智慧，凭着脚踏实地和艰苦奋斗的创业精神，以领先一步的科学技术，实现了企业快速发展。不仅成为华北地区印刷包装行业的“擎天柱”，而且也发展成为国际一流，颇有盛誉，以印刷包装行业为主的综合性集团，是华北包装产业的佼佼者。     

Enhanced photoelectrochemical current response of titania nanotube array

Self-organized and highly-ordered TiO₂ nanotube array with disjunctive wall-hole structure has been synthesized from titanium foil by potentiostatic–galvanostatic anodization process. The morphology and microstructure of the TiO₂ layer depend greatly on the electrolyzing parameters and electrolyte components. TiO₂ formation mechanism by anodization oxidation is discussed. The crystallized TiO₂/Ti nanotube electrode exhibited a significant enhancement of photoelectrochemical current response in comparison with micrometer-sized TiO₂/Ti multiporous electrode. Such kind of TiO₂ nanotube will have many potential applications in various areas as an outstanding photoelectrochemical material.     

Low-temperature sol-gel intermediate layer wafer bonding

Silicon-to-silicon wafer bonding has been successfully performed using sol-gel intermediate layer, which is deposited by spinning acid-catalyzed tetraethylthosilicate solution on the surfaces of two silicon wafers to be bonded. The bond strength is up to 35 MPa at a bonding temperature of 100 °C, which is near to the fractured strength of bulk silicon. To investigate the effects of the press parameters, Draper-Lin small composite design is used, as it requires the minimum number of runs in the design of experiments. Statistic analysis shows that the bonding temperature is the dominant factor for the bond quality, while the interaction between bonding temperature and concentration is significant on bond strength. The physical mechanisms of the observed significant effects are discussed. The improvement of the wafer bonding using annealed sol-gel intermediate layer is also proposed.     

GIS中快速暂态过电压对电抗器的影响

简述了GIS中隔离开关操作时产生VFTO的机理及干扰高压设备的途径,在此基础上分析VFTO对电抗器的影响及线路阻波器设计中的改进措施。     

基于MCS-51单片机的家庭安防电话委托系统的设计

本文介绍了一种以MCS-51单片机为微控制器的家庭安防电话委托系统，给出了系统的原理图，单机与语音芯片的硬件连接图以及系统部分软件流程图。     

零电压零电流开关全桥PWM变换器的研究

文本通过分析全桥ZVZCS PWM变换器的工作原理,得出其与传统的全桥ZVZCS PWM变换器的不同之处,然后具体分析对于变化的负载电流,电路环流是如何自我调节以实现ZCS的,并给出了一些影响实现ZVZCS的关键元器件的参数设计公式。最后样机的试验波形证了本文的分析研究。     

电子设备电源系统的谐波特性研究

电子设备的电源系统或电力系统中,存在多种类型的谐波源,分为谐波电流源和谐波电压源,本文针对典型电源系统开关电源系统进行分类和建模,给出各类谐波源的特征,并对容性滤波整流电路的谐波特性进行了分析.     

热退火对 InGaN薄膜性质的影响

对采用金属有机化学气相沉积方法生长的In组分为0.14的InGaN薄膜在不同温度下进行了热退火处理.通过X射线衍射、原子力显微镜、光致发光谱和变温霍尔等测试方法研究了In0.14Ga0.86N薄膜的晶格质量、表面形貌以及光学特性和电学特性随着退火温度的变化情况.结果表明,有利于提高In0.14Ga0.86N薄膜质量的最佳退火温度为500℃.通过对变温霍尔实验数据的拟合,初步分析了退火前后InGaN样品中的多种散射机制以及它们的变化情况.     

在Authorware中实现动态显示函数的图像

以实例说明制作能随参数改变而连续动态地显示函数图像的课件方法.