SUPANET的入网控制技术

本文以西南交通大学四川省网络通信技术重点实验室提出的“单物理层用户数据传输平面的体系结构”(SUPA)为背景,通过分析比较现存的各种接纳控制策略和算法,提出了适合SUPA的接纳控制策略和算法。     

DEH控制系统在125 MW汽轮机上的应用

介绍了江西贵溪发电厂国产125MW机组调速系统的低压透平油纯电调改造的意义、方案选择及各相关系统的改造内容。改造后机组的运行情况良好，低压透平油纯电调改造，具有简单、实用、经济、可靠的特点，对同类型机组的技术改造具有借鉴意义。     

Electron impact collision strengths and oscillator strengths for Ni-like Nd, Sm, Eu, Gd, Ta, and W ions

Energy levels, oscillator strengths, and electron impact collision strengths have been calculated for Ni-like ions of Nd (Z = 60), Sm (Z = 62), Eu (Z = 63), Gd (Z = 64), Ta (Z = 73), and W (Z = 74) among the 249 levels belonging to the ([Ne])3s²3p⁶3d¹⁰, 3s²3p⁶3d⁹nl, 3s²3p⁵3d¹⁰nl, 3s3p⁶3d¹⁰nl (n = 4, 5; l = 0, 1, … , n − 1) configurations. Configuration interactions among these configurations have been included in the calculations. Collision strengths have been obtained at 20 scattered electron energies (5–20,000 eV) and they have been listed at six representative energies of 100, 400, 1000, 2500, 5000, and 10,000 eV in this work. Effective collision strengths have been obtained by assuming a Maxwellian electron velocity distribution at 24 temperatures ranging from 100 to 3000 eV. Our results are compared with those available in the literature. The relative difference is within 0.3% between our calculated energy levels and the corresponding experimental values wherever available. The energy levels are expected to be be accurate within 0.6%, while oscillator strengths and collision strengths for strong transitions are probably accurate to better than 20%. The complete dataset is available electronically from http://www.astronomy.csdb.cn/EIE/.     

Electrical Properties and Electroluminescence of 4H-SiC p-n Junction Diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001 ) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal aircooled quartz tube at around 1500 ℃and 1.33 × 104 Pa by employing SiH4 C2H4 H2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm2 ·V -1 ·s -1 with a carrier concentration of ～ 1016 cm-3 and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 × 1021 cm-3 with a mobility of 0.75 cm2 ·V -1 ·S -1. SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Aldoped 4H-SiC substrates. The C-V characteristics of the diodes were linear in the 1/C3-V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 ℃, which provides a potential for high-temperature applications.     

Challenges and R&D opportunities of smart distribution grids in China

In this paper, 5 investigations on the current states of power distribution grids in China have been introduced that cover the surveys of the practical distribution asset utilization, the simultaneity factor of feeder loading, the load compositions and characteristics, the urban reliability and the integration of distributed generations of renewable resources. Based on the survey results in the investigations, 12 Facts are clearly presented. It shows that the challenges to modernize the distribution grids in China are to improve the asset utilization rates, the electricity efficiencies and the reliability of distribution systems, as well as to integrate increasing amount of variable distributed renewable resources. Furthermore based on the challenges, 8 R&D opportunities have been identified.     

电测技术在人体骨骼力学性能分析中的应用

用电测实验应力分析方法,对人体管状长骨的力学性质,以及骨折的钢板皮外固定治疗中的力学问题,进行测量与分析。其结果对于推进力学理论在医学方面的应用,以及临床治疗骨折,具有实用价值。     

湖南省土壤中天然放射性核素含量调查研究

本文报道湖南省土壤中天然放射性核素含量的调查结果。布点方法与环境陆地γ辐射剂量率调查相同,全省共布25×25km 网格点309个,土类加密点5个,特殊加密点7个,共采集土壤样品321个。土壤样品中天然放射性核素含量的测定采用放化分析方法。调查结果表明,湖南省土壤中~(23(?))U、~(232)Th、~(226)Ra 和~(40)K 含量按样品数的加权均值分别为48.05、54.82、59.36和447.75Bq/kg。零陵地区土壤中~(238)U、~(232)Th 和~(226)Ra 含量最高,郴州地区次之,湘西自治州地区居三。湖南省6类主要土壤中~(40)含量较为接近,而红壤中~(238)U、~(232)Th 和~(226)Ra 含量较高。     

用于放射性气溶胶在线富集进样的狭缝虚拟撞击器的研制

为满足环境气溶胶在线进样的要求,改善电感耦合等离子体质谱计(Inductively Coupled Plasma Mass Spectrometry,ICP蛳MS)对粒子中待测核素的探测限,研制出一套具有低流量、低压降特点的狭缝虚拟撞击器,可作为气溶胶在线富集进样系统的关键部件与ICPˉMS联用。本文介绍了该狭缝虚拟撞击器的研制情况:首先由ICP蛳MS的进样条件,根据经验公式完成了理论设计,确定进样流量为11L/min,强流与弱流的流量比为10,喷射狭缝宽度为1mm,长宽比为10;然后用计算流体动力学软件Fluent R对上述结构内部的流场和粒子运动径迹进行了数值模拟,考察了喷射狭缝与收集狭缝的间距G、收集狭缝的宽度Wc及其进口曲率半径的加工偏差对收集效率的影响,得到了较优化的取值范围:G取1.0～1.2mm,Wc取1.4～1.6mm,此时的切割粒径D50约2.5μm;加工出狭缝虚拟撞击器的原型装置,对其分别用室内空气气溶胶和荧光素钠标记的单分散油酸粒子进行富集性能测量。实测结果表明:空气动力学等效直径在2.5～5μm范围内的粒子浓度得到了明显富集,5μm的粒子的富集因子达到极大值7。     

矿热炉把持器的传热分析

以矿热炉电极把持器的传热计算为核心,研究把持器的结构设计和参数选用。通过对冷却水流量、壁面厚度、水垢厚度、烟气温度等影响因素的研究,结合把持器传热边界条件,分析了在不同参数条件下传热变化趋势,为电极把持器的设计和应用提供了参考依据。     

微机控制的感应电动机特性测试系统

采用单片机作为下位机,PC机作为上位机,联合组成了感应电动机特性的微机测试系统。单片机对被测电量波形进行同步采样,对被测电机的运行状态进行控制。PC机控制单片机的运行,对测量数据进行快速处理,打印试验报告,绘制图形曲线,实现了测试过程的自动化。