Magnetic Field‐Enhanced Thermoelectric Performance in Dirac Semimetal Cd3As2 Crystals with Different Carrier Concentrations

The magneto‐thermoelectric figure of merit (ZT) in crystals of the topological Dirac semimetal Cd₃As₂ with different carrier concentrations is studied. The ZTs for all the crystals increase with the temperature and show maxima at high temperatures. Meanwhile, the temperatures corresponding to the ZT maxima increase with the carrier concentration. The limit to the improvement in ZT(T) at high temperature could be related to the unusual large enhancement in thermal conductivity at elevated temperatures. The bipolar effect and Dirac liquid behavior are presented as processes possibly responsible for the peculiar behavior of the thermal conductivity. Applying a transverse magnetic field initially leads to a dramatic enhancement and, subsequently, to a slight reduction in ZT for all the crystals. The maximum ZT achieved in a magnetic field increases with the carrier concentration and reaches 1.24 at 450 K in a magnetic field of 9 T for the crystal with the highest carrier concentration. It is expected that this work will be beneficial to the current interests in optimizing the thermoelectric properties of quantum topological materials.     

Honeypot game‐theoretical model for defending against APT attacks with limited resources in cyber‐physical systems

A cyber‐physical system (CPS) is a new mechanism controlled or monitored by computer algorithms that intertwine physical and software components. Advanced persistent threats (APTs) represent stealthy, powerful, and well‐funded attacks against CPSs; they integrate physical processes and have recently become an active research area. Existing offensive and defensive processes for APTs in CPSs are usually modeled by incomplete information game theory. However, honeypots, which are effective security vulnerability defense mechanisms, have not been widely adopted or modeled for defense against APT attacks in CPSs. In this study, a honeypot game‐theoretical model considering both low‐ and high‐interaction modes is used to investigate the offensive and defensive interactions, so that defensive strategies against APTs can be optimized. In this model, human analysis and honeypot allocation costs are introduced as limited resources. We prove the existence of Bayesian Nash equilibrium strategies and obtain the optimal defensive strategy under limited resources. Finally, numerical simulations demonstrate that the proposed method is effective in obtaining the optimal defensive effect.     

PZT薄膜的深槽反应离子刻蚀研究

研究了锆钛酸铅(PZT)薄膜的深槽反应离子刻蚀(DRIE)技术。首先,对比了3种工艺气氛条件下(SF6/Ar、CF4/Ar和CHF3/Ar)刻蚀PZT的效果。实验结果表明,3种工艺气氛下,刻蚀速率都随功率的增加而增加。相同功率下,SF6/Ar的刻蚀速率最高;而CHF3/Ar刻蚀PZT的图形形貌最好,对光刻胶的选择比也最好。最后得出了优化的工艺条件为采用CHF3/Ar,射频(RF)功率为160 W,气体流量比为3∶4(CHF3∶Ar=30 cm3/min:40 cm3/min)时,PZT薄膜的刻蚀速率为9 nm/min,光刻胶的选择比为7。     

用于皮肤影像诊断的光学成像方法

皮肤影像学是利用现代成像技术手段对皮肤病进行无创、原位、动态、实时诊断的一门新兴技术学科。在过去十几年里作为医学影像学分支的皮肤影像学取得了长足的进步,包括皮肤镜等多种光学成像技术已经被广泛应用于临床疾病诊断。主要介绍了皮肤镜、皮肤共聚焦、多光子成像、光学相干层析成像以及光声成像等技术在皮肤影像学中的发展和应用。这5种技术能够实现原位、在体、实时的皮肤成像,可对可疑部位进行重复检查,并能不同程度地实现皮下组织的无损成像,为临床诊断提供了客观的评价依据。不断发展的皮肤影像学,与皮肤组织病理学相互促进、相互补充,势必将带动现代皮肤病学的飞跃发展。     

基于分数频率合成器的多标准I/Q载波产生系统

本文基于sigma-delta分数频率合成器设计了多标准I/Q正交载波产生系统。通过合理的频率规划,此系统能够应用于多标准无线通讯系统。设计采用了0.13um的标准CMOS射频工艺。测试结果显示3个正交VCO的频率覆盖范围为3.1GHz至6.1GHz(65.2%),然后通过串联的除二分频器,可以使系统的频率连续覆盖0.75GHz至6GHz。整个芯片的面积是2.1mm1.8mm。在1.2V的电源电压下系统功耗为21.7mA(除去输出缓冲级)。利用频率预置技术,锁相环的锁定时间小于4us。并且在系统中加入了非易失性存储器(NVM),能够存储系统的一些数字配置信息包括锁相环的预置信息,利用NVM的非易失存储特性,使得整个系统能够避免重复的校正。     

基于贝叶斯理论的神经网络算法研究

本文研究了基于贝叶斯理论的神经网络算法,采用贝叶斯方法来确定超参数,使得神经网络在训练过程中能自适应地调节超参数的大小,得出目标函数的最优化参数,从而达到提高神经网络泛化能力的目的.还编制仿真软件,验证了该算法的可行性.     

The performance of layered broadcast with superposition coding

In wireless broadcast system, where feedback is limited and channel state information is only available at the receiver side, layered broadcasting approach has been proposed to fully utilize the channel resources by providing different levels of service quality to users with different channel conditions. However, no upper bound has been given yet to show how the layered broadcast scheme will outperform the conventional broadcast (CB) scheme. In this paper, system average achievable rate (SAAR) is defined as the mean achievable rate of all users within the coverage. Based on continuum superposition coding (SC) with infinite layers, the upper bound of the SAAR of layered broadcasting is given by the derivation of the optimal power distribution function among the superposed layers. The results show that, by promoting the experience of stronger users (users with better channel conditions) without seriously degrading the performance of weaker users (users with worse channel conditions), layered broadcasting approach greatly increases the average system performance. Copyright © 2011 John Wiley & Sons, Ltd.     

Investigation of candidate VRM topologies for futuremicroprocessors

By reducing the power supply voltage, faster, lower power consumption, and high integration density data processing systems can be achieved. The current generation high-speed complementary metal-oxide-semiconductor (CMOS) processors (e.g., Alpha, Pentium, Power PC) are operating at above 300 MHz with 2.5 to 3.3 V output range. Future processors will be designed in the 1.1-1.8 V range, to further enhance their speed-power performance. These new generation microprocessors will present very dynamic loads with high current slew rates during transient. As a result, they will require a special power supply, voltage regulator module (VRM), to provide well-regulated voltage. The VRMs should have high power densities, high efficiencies, and good transient performance. In this paper, the critical technical issues to achieve this target for future generation microprocessors are addressed. A VRM candidate topology, interleaved quasisquare-wave (QSW), is proposed. The design, simulation and experimental results are presented     

浅论邮政企业组织文化的变革

针对邮政企业的组织文化相当落后 ,迫切需要进行变革 ,分析并提出了实现邮政企业组织文化变革的若干构想     

浅结欧姆接触研究

本文研究Al(Al-Si)/n~+(p~+)多晶硅/n~+(p~+)Si结构和Al-Si/n~+(p~+)Si结构的比接触电阻和反向漏电。结果表明,浅结时,Al/n~+(p~+)多晶硅/n~+(p~+)Si结构是良好的接触结构