Key-dependent side-channel cube attack on CRAFT

CRAFT is a tweakable block cipher introduced in 2019 that aims to provide strong protection against differential fault analysis. In this paper, we show that CRAFT is vulnerable to side-channel cube attacks. We apply side-channel cube attacks to CRAFT with the Hamming weight leakage assumption. We found that the first half of the secret key can be recovered from the Hamming weight leakage after the first round. Next, using the recovered key bits, we continue our attack to recover the second half of the secret key. We show that the set of equations that are solvable varies depending on the value of the key bits. Our result shows that 99.90% of the key space can be fully recovered within a practical time.     

无线技术的新领域--WUSB

无线USB(WUSB)技术是一个全新的无线传输标准.实现USB(通用串行总线)无线化以后,既可以保持有线USB的高速传输等优点,又可以去掉电缆的羁绊,给各种设备带来更大的便捷和移动性.文中首先介绍了WUSB技术的由来--UWB技术规范的标准化难以确定,然后对WUSB技术的规范标准进行了阐述,最后概述了WUSB技术的发展现状及目前和今后的技术研发重点,并对WUSB的发展前景进行了展望.     

Thermal cycling analysis of flip-chip solder joint reliability

The reliability concern in flip-chip-on-board (FCOB) technology is the high thermal mismatch deformation between the silicon die and the printed circuit board that results in large solder joint stresses and strains causing fatigue failure. Accelerated thermal cycling (ATC) test is one of the reliability tests performed to evaluate the fatigue strength of the solder interconnects. Finite element analysis (FEA) was employed to simulate thermal cycling loading for solder joint reliability in electronic assemblies. This study investigates different methods of implementing thermal cycling analysis, namely using the "dwell creep" and "full creep" methods based on a phenomenological approach to modeling time independent plastic and time dependent creep deformations. There are significant differences between the "dwell creep" and "full creep" analysis results for the flip chip solder joint strain responses and the predicted fatigue life. Comparison was made with a rate dependent viscoplastic analysis approach. Investigations on thermal cycling analysis of the temperature range, (ΔT) effects on the predicted fatigue lives of solder joints are reported     

High‐Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self‐Assembled Monolayer Doping

Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self‐assembled monolayer (SAM)‐based doping on the performance of WSe₂‐ and MoS₂‐based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 10¹¹ for octadecyltrichlorosilane (OTS) p‐doping and ≈10¹¹ for aminopropyltriethoxysilane (APTES) n‐doping (nondegenerate). Using this SAM doping technique, the field‐effect mobility is increased from 32.58 to 168.9 cm² V^?1 s in OTS/WSe₂ transistors and from 28.75 to 142.2 cm² V^?1 s in APTES/MoS₂ transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 10⁴ A W^?1) in the OTS/WSe₂ devices and by a factor of ≈26.4 (from 219 to 5.75 × 10³ A W^?1) in the APTES/MoS₂ devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6‐fold in the OTS/WSe₂ devices and ≈24.5‐fold in the APTES/MoS₂ devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air‐exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD‐based electronic/optoelectronic applications.     

茂金属催化剂产品性能及应用

文中对茂金属催化剂的研究进展和应用情况进行了介绍,重点说明了茂金属催化剂生产的树脂结构性能、膜性能,以及加工性,与Z/N催化剂生产LLDPE进行了比较,详细阐述了茂金属催化剂树脂的特性;     

天然气:通向氢能时代的桥梁

文章概述了人类能源利用从柴薪、煤到石油、天然气的探索与转变历程,着重对天然气利用在解决城市燃料和空气污染、提高发电效率、推动分布式发电、生产合成氨和合成甲醇、推动燃料电池转向氢能经济时代等方面的优越性进行了阐述。     

基于ML和ESPRIT方法的OFDMA上行链路频偏估计算法

由于载波频偏会给正交频分多址接入OFDMA系统带来子载波之间干扰,从而造成多用户之间的干扰,导致系统性能下降。该文提出一种基于ESPRIT和ML方法联合估计的频偏估计算法。该算法首先使用ESPRIT方法估计出多个可能的频偏构成的子集,然后使用最大似然估计方法在这个有限子集合中搜索出估计的频偏。该算法解决了使用似然估计进行多维搜索的问题,大大降低了算法的复杂度,同时解决了多个频偏估计的问题。     

A Novel Athermal 40-Channel DWDM Multi/Demultiplexer Based on the Combination of AWGs and Interleaver

An athermal 40-channel dense wavelength-division-multiplexing multi/demultiplexer using a novel combination technology is proposed. It consists of one 1times4 100- to 400-GHz spacing interleaver filter and four sub-arrayed-waveguide gratings (AWGs). The temperature-dependent wavelength shift of the combined device is successfully suppressed to 0.058 nm in the -20degC to 70degC temperature range. Moreover, the combined device's adjacent crosstalk (typically -35 dB) is much better than conventional AWGs (typically -25 dB).     

等离子体刻蚀凹栅槽影响AlGaN/GaN HEMT栅电流的机理

对等离子体干法刻蚀形成的凹栅槽结构AlGaN/GaN HEMTs肖特基电流增加的机理进行了研究.实验表明,凹栅槽结构AIGaN/GaN HEMTs肖特基栅电流增加一个数量级以上,击穿电压有一定程度的下降.利用AFM和XPS的方法分析AlGaN表面,等离子体干法刻蚀增加了AlGaN表面粗糙度,甚至出现部分尖峰状突起,增大了栅金属与AlGaN的接触面积;另一方面,等离子体轰击使AlGaN表面出现一定量的N空位,相当于栅金属与AlGaN接触界面处出现n型掺杂层,使肖特基结的隧道效应加强,降低了肖特基势垒.由此表明,AlGaN表面粗糙度的增加以及一定量的N空位出现是引起栅电流急剧增大的根本原因.     

非晶硅薄膜激光晶化及其结构分析

以射频(频率为13.6MHz)磁控溅射系统制备的非晶硅薄膜为前驱物,采用激光晶化技术实现从非晶硅薄膜到纳米晶硅薄膜的相变过程。采用拉曼光谱仪和高分辨透射电镜对激光晶化薄膜的组织结构进行了研究。结果表明:薄膜由非晶硅结构转变为微晶硅结构,微晶硅晶粒尺寸在纳米级。激光晶化存在一个最佳工艺参数,功率太高或太低都不利于晶化。