Free radical fast photo-cured gate dielectric for top-gate polymer field effect transistors

We demonstrated top-gate organic field effect transistors (OFETs) made with free radical photo-cured polymer gate dielectrics and poly(3-hexylthiophene). We introduced a new approach of cross linking dielectric polymers in OFETs by using acrylate monomers cured with UV irradiation directly on the semiconductor. Three different blends were formulated: one self-initiating acrylate oligomer and two epoxy acrylate monomers mixed with 4-phenylbenzophenone as photo initiator and N-methyldiethanolamine as amine synergist. Thin films of these blends were cured in air within one minute. The curing process was monitored with FT-IR spectroscopy and the effect of a wetting agent was studied by measuring the CV characteristics of metal–insulator-semiconductor (MIS) structures made with these formulations. OFETs made with the demonstrated formulations showed high on/off ratios (10⁵–10⁶) and low sub-threshold slopes (0.44–1.42 V/dec).     

Glyphosate Adsorption from Water Using Hierarchically Porous Metal–Organic Frameworks

The selective removal of one ligand in mixed-ligand MOFs upon thermolysis provides a powerful strategy to introduce additional mesopores without affecting the overall MOF structure. By varying the initial ligand ratio, MOFs of the MIL-125-Ti family with two distinct hierarchical pore architectures are synthesized, resembling either large cavities or branching fractures. The performance of the resulting hierarchically porous MOFs is evaluated toward the adsorptive removal of glyphosate (N-(phosphonomethyl)glycine) from water, and the adsorption kinetics and mechanism are examined. Due to their strong affinity for phosphoric groups, the numerous Ti–OH groups resulting from the selective ligand removal act as natural anchor points for effective glyphosate uptake. The relationships between contact duration, glyphosate concentration, and adsorbent dosage are investigated, and the impact of these parameters on the effectiveness of glyphosate removal from contaminated water samples is examined. The introduction of additional mesopores has increased the adsorption capacities by nearly 3 times with record values exceeding 440.9 mg g⁻¹, which ranks these MOFs among the best-reported adsorbents.     

Evaluation of process parameter space of bulk FinFETs using 3D TCAD

Using full 3D TCAD, an evaluation of process parameter space of bulk FinFET is presented from the point of view of DRAM, SRAM and I/O applications. Process and device simulations are performed with varying uniform fin doping, anti-punch implant dose and energy, fin width, fin height and gate oxide thickness. Bulk FinFET architecture with anti-punch implant is introduced beneath the channel region to reduce the punch-through and junction leakage. For 30 nm bulk FinFET, anti-punch implant with low energy of 15 to 25 keV and dose of 5.0 × 10¹³ to 1.0 × 10¹⁴ cm⁻² is beneficial to effectively suppress the punch-through leakage with reduced GIDL and short channel effects. Our simulations show that bulk FinFETs are approximately independent of back bias effect. With identical fin geometry, bulk FinFETs with anti-punch implant show same I_ON-I_OFF behavior and approximately equal short channel effects like SOI FinFETs.     

SCR operation mode of diode strings for ESD protection

Diodes and diode strings in 90 nm and beyond technologies are investigated by measurement and device simulation. After a thorough calibration, the device simulator is utilised to achieve a better understanding and an enhanced device performance of diode strings under static and transient ESD conditions. Thereto, parasitic transistors and a so far neglected parasitic thyristor (SCR) in the diode string are regarded, exploited and optimised.     

Charge transfer in thin films of donor–acceptor complexes studied by infrared spectroscopy

The degree of charge transfer in thin films of organic charge transfer (CT)-complexes, which are deposited via thermal evaporation, is examined via infrared-spectroscopy. We demonstrate a linear relationship between the shift in the excitation energy of the CN-stretching mode of CT-complexes with the acceptor 7,7,8,8-tetracyanoquinodimethane (TCNQ) and the charge transfer. The measured correlation corresponds very well with DFT calculations. For Na-TCNQ we observe a splitting in the peak of the CN-stretching mode, which can be explained by the coupling of two modes and was confirmed by the calculations. In CT-complexes with partial charge transfer the appearance of an electronic excitation is demonstrated.     

高音、微型及号筒扬声器单元的大信号性能

6．2号筒压缩式驱动器（单元） 这是一个用酚醛树脂含浸的织物为振膜的号筒压缩式单元,音圈直径51nm,卷线高度4．6mm,气隙厚4mm。连接的号筒和相位塞被移走,后腔体积仔细地密封好以避免任何额外的声学共振。     

Fiber Bragg Gratings in Small-Core Ge-Doped Photonic Crystal Fibers

This paper reports fiber Bragg gratings （FBGs） inscribed in a small-core Ge-doped photonic crystal fibers with a UV laser and a Talbot interferometer. The responses of such FBGs to temper- ature, strain, bending, and transverse-loading were systematically investigated. The Bragg wavelength of the FBGs shifts toward longer wavelengths with increasing temperature, tensile strain, and transverse-loading. The bending and transverse- loading properties of the FBGs are sensitive to the fiber orientations.     

Dirty RF: A New Paradigm

The implementation challenge for new low-cost low-power wireless modem transceivers has continuously been growing with increased modem performance, bandwidth, and carrier frequency. Up to now we have been designing transceivers in a way that we are able to keep the analog (RF) problem domain widely separated from the digital signal processing design. However, with today’s deep sub-micron technology, analog impairments – “dirt effects” – are reaching a new problem level which requires a paradigm shift in the design of transceivers. Examples of these impairments are phase noise, non-linearities, I/Q imbalance, ADC impairments, etc. In the world of “Dirty RF” we assume to design digital signal processing such that we can cope with a new level of impairments, allowing lee-way in the requirements set on future RF sub-systems. This paper gives an overview of the topic and presents analytical evaluations of the performance losses due to RF impairments as well as algorithms that allow to live with imperfect RF by compensating the resulting error effects using digital baseband processing.