In-situ measurement of higher-order strain derivatives for advanced analysis of forming processes using spatio-temporal optical flow

In-situ full-field measurements became one of the drivers for process understanding, model creation, validation and inverse analysis. Therefore, a novel spatio-temporal optical flow method for the robust measurement of higher-order strain derivatives is proposed. This computer vision approach overcomes inherent restrictions of established DIC methods. For advanced process analysis of shear cutting processes, the deformation curvature (2nd-order displacement derivative) and the respective rate (3rd-order displacement derivative) are of high interest. For the first time, it is possible to quantify experimentally these higher-order derivatives in sufficient quality with the proposed spatio-temporal optical flow approach. In addition, interesting correlations between the microstructure of the material and macroscopic process results are determined. This demonstrates the potential of the novel in-situ measurement approach for the advanced process analysis of metal forming processes in general.     

Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells

The gallium gradient in Cu(In,Ga)Se₂ (CIGS) layers, which forms during the two industrially relevant deposition routes, the sequential and co‐evaporation processes, plays a key role in the device performance of CIGS thin‐film modules. In this contribution, we present a comprehensive study on the formation, nature, and consequences of gallium gradients in CIGS solar cells. The formation of gallium gradients is analyzed in real time during a rapid selenization process by in situ X‐ray measurements. In addition, the gallium grading of a CIGS layer grown with an in‐line co‐evaporation process is analyzed by means of depth profiling with mass spectrometry. This gallium gradient of a real solar cell served as input data for device simulations. Depth‐dependent occurrence of lateral inhomogeneities on the µm scale in CIGS deposited by the co‐evaporation process was investigated by highly spatially resolved luminescence measurements on etched CIGS samples, which revealed a dependence of the optical bandgap, the quasi‐Fermi level splitting, transition levels, and the vertical gallium gradient. Transmission electron microscopy analyses of CIGS cross‐sections point to a difference in gallium content in the near surface region of neighboring grains. Migration barriers for a copper‐vacancy‐mediated indium and gallium diffusion in CuInSe₂ and CuGaSe₂ were calculated using density functional theory. The migration barrier for the In_Cu antisite in CuGaSe₂ is significantly lower compared with the Ga_Cu antisite in CuInSe₂, which is in accordance with the experimentally observed Ga gradients in CIGS layers grown by co‐evaporation and selenization processes. Copyright © 2014 John Wiley & Sons, Ltd.     

A kinetic study of Am(III)/humic colloid interactions

The interaction kinetics of the Am(III) ion with aquatic humic colloids is investigated under near-natural conditions by column experiments with a sandy aquifer sample rich in humic substancesforthe appraisal of the migration behavior of Am. The association and dissociation kinetics of the Am ion onto and from humic colloids control the migration of colloid-borne Am. As the contact time between Am and humic colloids prior to introduction into a column is increased, the mobility of colloid-borne Am is enhanced and hence the recovery of Am in the effluent increases. On the other hand, an increase of the migration time and residence time in column, respectively, reduces the Am recovery. Considering these experimental results a refined version of the kinetic model KICAM (Kinetically Controlled Availability Model), which suggests different Am binding modes with humic colloids, was developed. Applying KICAM it is possible to predict static and dynamic experiments affected by the kinetically controlled Am/humic colloid interactions over the range of 1 h up to several months. However, to apply these experimental results to long-term conditions, the Am binding scheme as proposed in KICAM needs to be verified. This paper provides, therefore, a basis for a better understanding of the colloid-borne Am migration in porous aquifer systems.