Transient hot-electron effect and its impact on circuit reliability

Transient hot-electron effect and its impact on circuit reliability are investigated. The rate of device decay is monitored as a function of the gate pulse transient period. Simulation results reveal that excess charges during a fast turn off time may cause an increase in the maximum substrate current. This, along with our experimental data, identifies that transient excess carrier may cause the enhancement of device degradation under certain stress conditions. The enhancement factor of the degradation is a function of the gate pulse transient time. Correlation between the analysis based upon AC/DC measurement and calculations based upon transient simulation are shown in the paper. Better agreement with experimental data is obtained by using the transient analysis and on chip test/stress structures. The correlation between AC and DC stress data is also shown based on the impact ionization model. A hot-electron design guideline is proposed based on the circuit reliability analysis. This guideline can help improve the circuit reliability without adversely effecting the circuit performance.     

Robustly good trellis codes

The relationship between the distance properties of trellis codes and the computational effort and error performance of sequential decoding is studied and optimum distance profile (ODP) and optimum free distance (OFD) trellis codes are constructed for 8-PSK and 16 QAM modulation. A comparison of the performance of both the ODP and the OFD trellis codes reveals that neither class of codes results in the best trade-off between error performance and computational effort when sequential decoding is used. A new algorithm is then proposed to construct robustly good trellis codes for use with sequential decoding. New trellis codes with asymptotic coding gains up to 6.66 dB are obtained using this algorithm, and the new codes achieve nearly the same free distances as the OFD codes and nearly the same distance profiles as the ODP codes     

Heading towards an advanced signalling system for multimedia,multiparty services in broadband ISDN

Introduction of the broadband integrated services digital network (B-ISDN) will enable network users to make use of advanced multimedia, multiparty services. With this aim in view, RACE II project R2044, MAGIC, is investigating long-term signalling requirements, architecture and protocols for B-ISDN. New service concepts are being developed in MAGIC which will provide more flexibility when compared to narrowband ISDN (N-ISDN). The service requirements and other signalling requirements, such as the separation between call and associated connections at the network-node interface, are used to determine the distribution of functions over the network. The signalling protocols which are used to exchange the signalling information are subsequently developed. These signalling protocols are simulated to prove the performance and the feasibility of call handling concepts     

各种状态的液体通过核孔膜的规律

介绍了液体通过核孔膜规律方面取得的新认识，包括：（１）纯净液体通过核孔膜的规律；（２）核孔膜测定液体粘滞系数的各种方法；（３）各种物质溶液浓度的核孔膜测定；（４）液相混合物快速分离和化学分离；（５）流体中固体微粒对核孔膜的堵塞及其公式；（６）用核孔膜滤除液中各各斩规律。     

Experimental and theoretical studies on a distributed temperaturesensor based on Brillouin scattering

Results are reported from recent research on the use of the Brillouin gain/loss mechanism for distributed sensing. A theoretical model of the interaction of the pulsed and CW beams is described and compared with experiments. Results from a system with a 51 km sensing length are presented. We finally investigate issues related to the variation within the sensing fiber of the polarizations of the two beams     

集群系统与公用网互连的仿真模型和模拟算法

在讨论ＭＰＴ１３２７信令的集群移动通信系统与国内Ｎｏ．７信令的ＰＳＴＮ网间互连，帝现两种信令配合中，研究了集群系统的仿真模型和模拟算法，同时模拟出整个集群系统的工作情况，运行结果证实了所提方案的可行性与准确性。     

Quantitative NMR spectroscopy by matrix pencil methods

The matrix pencil (MP) method, based on the singular value decomposition (SVD), is applied to quantitative NMR spectroscopy. Its relationship to other SVD-based methods is also presented. Simulations and applications are given to demonstrate the capability of superior performance.©1993 John Wiley & Sons Inc     

Myofibroblast accumulation induced by transforming growth factor-beta is involved in the pathogenesis of nasal polyps

Myofibroblasts that express alpha-smooth muscle actin (alpha-SMA) are detected in many chronic inflammatory diseases. Transforming growth factor-beta (TGF-beta) is a potent inducer of myofibroblast accumulation in tissues. In this study, scattered myofibroblasts and TGF-beta were quantified and localized in nasal polyps (NPs) and normal nasal mucosa (NM). NPs were sampled in 16 patients during ethmoidectomy and NM was obtained from 10 control subjects during rhinoplasty. alpha-SMA and TGF-beta were detected using immunohistochemistry and the numbers of labeled cells were quantified (alpha-SMA and TGF-beta indices) and compared between NPs and NM. In eight NPs, in which the pedicle was preserved, alpha-SMA and TGF-beta were evaluated and compared in the pedicle, central, and tip areas. Finally, TGF-beta expression was compared between low (zone 1), moderate (zone 2), and high (zone 3) zones of alpha-SMA positivity. alpha-SMA and TGF-beta indices were significantly higher in NPs than in NM. In the eight selected NPs, alpha-SMA-positive cells were significantly more abundant in the pedicle than in the central and tip areas, whereas TGF-beta-positive cells were significantly more numerous in the pedicle than in the tip area. The number of TGF-beta-positive cells was significantly higher in zone 3 than in zone 1 of alpha-SMA positivity. Myofibroblasts, which are abundant in NPs but rare in NM, could be involved in the growth of NPs by inducing extracellular matrix accumulation. The local development of myofibroblasts in NPs could be controlled by TGF-beta, locally produced by inflammatory cells.     

Simulation study of peak junction temperature and power limitationof AlGaAs/GaAs HBTs under pulsed and CW operation

The authors have used a 3-D transmission-line matrix (TLM) modeling method to study the junction temperature distribution and power limitation of device geometries with multiple embedded heat sources. Peak values of the junction temperature against the dissipated power density under both pulsed and CW operation are presented for a typical power AlGaAs/GaAs HBT structure. These data should facilitate the rapid determination of junction temperature for a given output power, which is of paramount importance in power device design