Highly sensitive and rapidly responding room-temperature NO<Subscript>2</Subscript> gas sensors based on WO<Subscript>3</Subscript> nanorods/sulfonated graphene nanocomposites

Metal oxide/graphene nanocomposites are emerging as promising materials for developing room-temperature gas sensors. However, the unsatisfactory performances owing to the relatively low sensitivity, slow response, and recovery kinetics limit their applications. Herein, a highly sensitive and rapidly responding room-temperature NO₂ gas sensor based on WO₃ nanorods/sulfonated reduced graphene oxide (S-rGO) was prepared via a simple and cost-effective hydrothermal method. The optimal sensor response of the WO₃/S-rGO sensor toward 20 ppm NO₂ is 149% in 6 s, which is 4.7 times higher and 100 times faster than that of the corresponding WO₃/rGO sensors. In addition, the sensor exhibits excellent reproducibility, selectivity, and extremely fast recovery kinetics. The mechanism of the WO₃/S-rGO nanocomposite gas sensor is investigated in detail. In addition to the high transport capability of S-rGO as well as its excellent NO₂ adsorption ability, the superior sensing performance of the S-rGO/WO₃ sensor can be attributed to the favorable charge transfer occurring at the S-rGO/WO₃ interfaces. We believe that the strategy of compositing a metal oxide with functionalized graphene provides a new insight for the future development of room-temperature gas sensors.

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Ultra-dense planar metallic nanowire arrays with extremely large anisotropic optical and magnetic properties

A nanofabrication method for the production of ultra-dense planar metallic nanowire arrays scalable to wafer-size is presented. The method is based on an efficient template deposition process to grow diverse metallic nanowire arrays with extreme regularity in only two steps. First, III–V semiconductor substrates are irradiated by a low-energy ion beam at an elevated temperature, forming a highly ordered nanogroove pattern by a “reverse epitaxy” process due to self-assembly of surface vacancies. Second, diverse metallic nanowire arrays (Au, Fe, Ni, Co, FeAl alloy) are fabricated on these III–V templates by deposition at a glancing incidence angle. This method allows for the fabrication of metallic nanowire arrays with periodicities down to 45 nm scaled up to wafer-size fabrication. As typical noble and magnetic metals, the Au and Fe nanowire arrays produced here exhibited large anisotropic optical and magnetic properties, respectively. The excitation of localized surface plasmon resonances (LSPRs) of the Au nanowire arrays resulted in a high electric field enhancement, which was used to detect phthalocyanine (CoPc) in surface-enhanced Raman scattering (SERS). Furthermore, the Fe nanowire arrays showed a very high in-plane magnetic anisotropy of approximately 412 mT, which may be the largest in-plane magnetic anisotropy field yet reported that is solely induced via shape anisotropy within the plane of a thin film.

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Nontoxic engineered virus nanofibers as an efficient agent for the prevention and detection of fungal infection

Nano Research - Candida albicans (C. albicans) infection has a high mortality rate in immunocompromised patients. Owing to the inefficiency of the current diagnostic system and the absence of...     

Aggregation-induced emission luminogen-assisted stimulated emission depletion nanoscopy for super-resolution mitochondrial visualization in live cells

Nano Research - Aggregation-induced emission luminogens (AIEgens) are fluorescent agents that are ideal for bioimaging and have been widely used for organelle targeting, cellular mapping, and...     

治疗超声系统换能器阻抗及驱动功率测量技术

换能器是治疗超声系统的核心部件之一,其阻抗和驱动功率关系到治疗超声的安全性和有效性。文章研制出一种基于电压-电流转换电路和数据采集卡的测量装置。使用该装置测量频率为1.36 MHz和3 MHz换能器在不同幅度信号驱动下的阻抗、相位角和功率。该装置的测量结果与采用电压、电流探头及功率组件的示波器方法和商用功率计方法的测量结果进行了对比,表明本装置测量阻抗模相对误差在±2Ω以内,阻抗角相对误差在±2°以内,测量入射功率和有功功率误差小于5%。结果证明了用该装置实时测量换能器阻抗和驱动功率的可行性。     

Influence of Heat Input on Microstructure and Mechanical Properties of Laser Welding GH4169 Bolt Assembly—Numerical and Experimental Analysis

By conducting the numerical and experimental analysis, the influence of heat input on the microstructures and mechanical properties of laser welding GH4169 bolt assembly is systematically investigated. The weld formation, temperature field, and residual stress distribution during laser welding by using the finite element modeling are consistent with experimental results. The numerical simulation results show that the increase of heat input imparts lower residual stresses and higher temperature gradient. During the process of laser welding, the steepest temperature gradient and the peak residual stress arise in the fusion zone (FZ). In addition, the dissolution of γ″ and γ′ toward the fusion line increases in heat affected zone (HAZ), but only Laves phase is observed in FZ. With increasing heat input from 24 to 48 J mm⁻¹, the ultimate tensile strength of welded joints decreases. Both the lowest microhardness values and tensile failure of GH4169 alloy laser welded joint are in FZ. Herein, it is that the relationship among the heat input, microstructures, and mechanical properties of GH4196 bolt assembly in laser welding is systematically established, which will be of guiding significance for the selection of welding parameters in aerospace.     

Recent Advances in Rolling 2D TMDs Nanosheets into 1D TMDs Nanotubes/Nanoscrolls

Transition metal dichalcogenides (TMDs) van der Waals (vdW) 1D heterostructures are recently synthesized from 2D nanosheets, which open up new opportunities for potential applications in electronic and optoelectronic devices. The most recent and promising strategies in regards to forming 1D TMDs nanotubes (NTs) or nanoscrolls (NSs) in this review article as well as their heterostructures that are produced from 2D TMDs are summarized. In order to improve the functionality of ultrathin 1D TMDs that are coaxially combined with boron nitride nanotubes and single-walled carbon nanotubes. 1D heterostructured devices perform better than 2D TMD nanosheets when the two devices are compared. The photovoltaic effect in WS₂ or MoS₂ NTs without a junction may exceed the Shockley–Queisser limit for the above-band-gap photovoltage generation. Photoelectrochemical hydrogen evolution is accelerated when monolayer WS₂ or MoS₂ NSs are incorporated into a heterojunction. In addition, the photovoltaic performance of the WSe₂/MoS₂ NSs junction is superior to that of the performance of MoS₂ NSs. The summary of the current research about 1D TMDs can be used in a variety of ways, which assists in the development of new types of nanoscale optoelectronic devices. Finally, it also summarizes the current challenges and prospects.     

A review on mechanisms and recent developments of nanomaterials based carbon fiber reinforced composites for enhanced interface performance

Carbon fiber reinforced composites have attracted lots of attention in many fields. However, on account of the poor infiltration of resin to carbon fiber, the weak interface performance between fiber and resin has been restricting the interface properties of composites. In recent progress, the review attaches more importance to the introduction of the third phase monomer, which mainly uses physical and chemical methods to assemble nanomaterials (such as carbon nanotubes, graphene, etc.) on the carbon fiber surface to modify the interface structure of the carbon fiber reinforced composites, and all of them have been demonstrated in this paper. Furthermore, the effects of introducing nanomaterials on the structure of the fiber/resin interface and the relationship between multi-scale interface structure and properties have been investigated. It can be seen that the design idea of researchers mainly uses one or more theories to improve the interface properties of carbon fiber reinforced composites, such as transition layer, chemical bonding, mechanical interlocking, infiltration, diffusion, and adsorption. In brief, this work provides some novel insights for the preparation of carbon fiber reinforced composites with excellent interlaminar shear strength.     

A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors

Hemispherical image sensors simplify lens designs, reduce optical aberrations, and improve image resolution for compact wide-field-of-view cameras. To achieve hemispherical image sensors, organic materials are promising candidates due to the following advantages: tunability of optoelectronic/spectral response and low-temperature low-cost processes. Here, a photolithographic process is developed to prepare a hemispherical image sensor array using organic thin film photomemory transistors with a density of 308 pixels per square centimeter. This design includes only one photomemory transistor as a single active pixel, in contrast to the conventional pixel architecture, consisting of select/readout/reset transistors and a photodiode. The organic photomemory transistor, comprising light-sensitive organic semiconductor and charge-trapping dielectric, is able to achieve a linear photoresponse (light intensity range, from 1 to 50 W m⁻²), along with a responsivity as high as 1.6 A W⁻¹ (wavelength = 465 nm) for a dark current of 0.24 A m⁻² (drain voltage = −1.5 V). These observed values represent the best responsivity for similar dark currents among all the reported hemispherical image sensor arrays to date. A transfer method was further developed that does not damage organic materials for hemispherical organic photomemory transistor arrays. These developed techniques are scalable and are amenable for other high-resolution 3D organic semiconductor devices.