Is layering, harmful? [remote procedure call]

Remote procedure call (RPC) mechanisms over the US Department of Defense transmission control protocol. (TCP) can produce behavior analogous to the silly window syndrome because of a mismatched interface between the socket and the TCP modules. The detection and diagnosis of the problem are addressed. Some pointers to a design approach that could avoid the problems of mismatched communication layers are provided     

A recurrent neural network for solving a class of general variational inequalities.

This paper presents a recurrent neural-network model for solving a special class of general variational inequalities (GVIs), which includes classical VIs as special cases. It is proved that the proposed neural network (NN) for solving this class of GVIs can be globally convergent, globally asymptotically stable, and globally exponentially stable under different conditions. The proposed NN can be viewed as a modified version of the general projection NN existing in the literature. Several numerical examples are provided to demonstrate the effectiveness and performance of the proposed NN.     

高碳铬铁电炉高基质干式打结料的研究

通过对组成打结料成分特性的研究，提出以优质原料生产的MgO-CaO-Fe2O3系合成砂为骨料，用MgO〉97％，粒度〈0．088mm烧结镁砂做细粉，适当添加超微粉等工艺措施，制成适当高碳铬铁电炉炉底用的高基质打结料，通过调控基质成分，实现材料相和固相的复合烧结。     

High-breakdown-voltage AlSbAs/InAs n-channel field-effecttransistors

InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs     

一种可用于可调谐环行Ti：Al_2O_3激光器的宽带单向器

本文介绍一种宽带单向器的原理及设计。选用ＴＧＧ作磁旋光介质，旋光石英晶片作补偿片，所设计的色散补偿型宽带单向器预计可在７００～１０００ｎｍ波长范围内实现环行激光腔中的单向行波运行；将其应用在可调谐环行Ｔｉ：Ａｌ２Ｏ３激光器中，获得了良好的实验结果。     

浸胶工艺对Nomex蜂窝性能的影响

本文研究了浸胶工艺对Ｎｏｍｅｘ蜂窝性能的影响，分析探讨了提高Ｎｏｍｅｘ蜂窝性能及外观质量的途径。研究结果表明：采取新的浸胶工艺制作的Ｎｏｍｅｘ蜂窝，各项性能全面达到法国宇航材料标准。     

Direct imaging of a high-power diode laser cavity using a transparent indium-tin-oxide (ITO) contact

We describe a novel "see-through" indium-tin-oxide contact on the n-side of a high power unstable resonator semiconductor laser (URSL) that allows direct observation of the cavity during high power operation. Under optimized annealing conditions this transparent ITO contact has a low enough specific contact resistivity to permit normal high power CW operation of the URSL and allows the observation of filamentation. This contact scheme is applicable to a wide range of semiconductor lasers and is especially appropriate for high power devices. The same structure can also be used to obtain a 2-D thermal map of the laser cavity.