浸胶工艺对Nomex蜂窝性能的影响

本文研究了浸胶工艺对Ｎｏｍｅｘ蜂窝性能的影响，分析探讨了提高Ｎｏｍｅｘ蜂窝性能及外观质量的途径。研究结果表明：采取新的浸胶工艺制作的Ｎｏｍｅｘ蜂窝，各项性能全面达到法国宇航材料标准。     

Direct imaging of a high-power diode laser cavity using a transparent indium-tin-oxide (ITO) contact

We describe a novel "see-through" indium-tin-oxide contact on the n-side of a high power unstable resonator semiconductor laser (URSL) that allows direct observation of the cavity during high power operation. Under optimized annealing conditions this transparent ITO contact has a low enough specific contact resistivity to permit normal high power CW operation of the URSL and allows the observation of filamentation. This contact scheme is applicable to a wide range of semiconductor lasers and is especially appropriate for high power devices. The same structure can also be used to obtain a 2-D thermal map of the laser cavity.     

Study of the Mössbauer effect on rare-earth borided surface layers on pure iron

Journal of Materials Science Letters -     

金刚石光电导探测器研制及在软X光测量中的初步应用

介绍了我们自己设计制造的天然Ⅱａ型金刚石光导探测器的结构，原理，制造工艺，实验标定及其在ＩＣＦ实验中软Ｘ光测量中的应用等。     

High-T/sub 0/ strain-compensated InGaAsSb-AlGaAsSb quantum-well lasers emitting at 2.43 /spl mu/m

Strain-compensated InGaAsSb-AlGaAsSb quantum-well (QW) lasers emitting near 2.5 /spl mu/m have been grown by solid-source molecular beam epitaxy. The relatively high arsenic composition causing a tensile strain in the Al/sub 0.25/GaAs/sub 0.08/Sb barriers lowers the valence band edge and the hole energy level, leading to an increased hole confinement and improved laser performance. A 60% external differential efficiency in pulsed mode was achieved for 1000-/spl mu/m-long lasers emitting at 2.43 /spl mu/m. A characteristic temperature T/sub 0/ as high as 163 K and a lasing-wavelength temperature dependence of 1.02 nm//spl deg/C were obtained at room temperature. For 2000 /spl times/ 200 /spl mu/m/sup 2/ broad-area three-QW lasers without lateral current confinement, a low pulsed threshold of 275 A/cm/sup 2/ was measured.