Silicon-to-steel bonding using rapid thermal annealing

This paper presents the rapid, low-temperature bonding between silicon and steel using the rapid thermal annealing process. Three different thin-film adhesion layer systems including silver, gold, and nickel were utilized as the intermediate bonding material to assist the eutectic Pb/Sn bonding between silicon and steel. The bonding temperature was set at 220/spl deg/C for 20 s, with a 20-s ramp-up time. Five experiments were conducted to determine the strength of the bond, including static tensile and compressive four-point bend tests, axial extension tests, tensile bending fatigue tests, and corrosion resistance tests. The test results have shown that the gold adhesion layer is the most robust, demonstrating minimal creep during fatigue tests, no delamination during the tensile or compressive four-point bend tests, and acceptable strength during the axial extension tests. Additionally, all adhesion layers have withstood four months of submersion in various high-temperature solutions and lubricants without failure. Simulations of the axial stresses and strains that developed during the four-point bend and axial extension tests were performed and showed that the presence of the silicon die provides a local reinforcement of the bond as observed in the experimental tests.     

Nanoscale structural characteristics and electron field emission properties of transition metal–fullerene compound TiC60 films

Transition-metal compound TiC₆₀ thin films were grown by co-deposition from two separated sources of fullerene C₆₀ powder and titanium. Study of structural properties of the films, by Raman spectroscopy, atomic force microscopy, and scanning tunneling spectroscopy reveals that the films have a deformed C₆₀ structure with certain amount of sp³ bonds and a rough surface with a large number of nanoclusters. z–V tunnelling spectroscopic measurements suggest that several charge transport mechanisms are involved in as the tip penetrates into the thin film. Conventional field electron emission (FEE) measurements show a high emission current density of 10 mA/cm² and a low turn-on field less than 8 V/μm, with the field enhancement factors being 659 and 1947 for low-field region and high-field region, respectively. By exploiting STM tunneling spectroscopy, local FEE on nanometer scale has also been characterized in comparison with the conventional FEE. The respective field enhancement factors are estimated to be 99–355 for a gap varying from 36 to 6 nm. The enhanced FEE of TiC₆₀ thin films can be ascribed to structural variation of C₆₀ in the films and the electrical conducting paths formed by titanium nanocrystallites embedded in C₆₀ matrix.     

池27井机抽排水采气效果分析

介绍了池27井实施机抽排水工艺取得累计排水13 334.4m3的明显效果.分析了五次检泵的原因.提出了对池27井机抽排水的四点认识.     

棉织物手感值的模糊综合评判研究

利用模糊综合评判数学模型对棉织物的手感值进行了计算与分析，这种方法简单、可靠，与主观评估结果有很好的一致性，为纺织生产的质量判断提供了便利。     

矩形垂直筛板的流体力学性能研究

在600mm的有机玻璃冷模塔中,用水-空气体系测定矩形垂直筛板的塔板压降、漏液和雾沫夹带等流体力学性能,确定了合理的塔板结构,使其具有较高的气液通量和较宽的操作范围,空塔动能因子最大可达3.0kg1/2(m1/2.s)-1,液流强度可达21.6m3/(m.h)。并对不同气液流量下塔板的流体力学实验数据进行关联和分析,得出了矩形垂直筛板的干板压降计算关联式以及漏液率随液流强度和空塔动能因子的变化关系,为矩形垂直筛板的设计提供了依据。与新垂直筛板相比,矩形垂直筛板具有更低的塔板压降。     

3-D MCM封装技术及其应用

介绍了超大规模集成电路（VLSI）用的3-D MCM封装技术的最新发展，重点介绍了3-D MCM封装垂直互连工艺，分析了3-D MCM封装技术的硅效率、复杂程度、热处理、互连密度、系统功率与速度等问题，并对3-D MCM封装的应用作了简要说明。     

Windows平台下的汉字输入法机制及应用

作者在Windows平台下，通过对E码汉字输入法系统实现的软件研发过程，本质地认识了Windows平台下的汉字输入法系统的实现原理及其基本方法；本文对Windows IME系统的两个主要组成部分：转换引擎和界面模块以及二者之间的交互关系进行了深入的分析，并揭示了Windows平台下整个汉字输入法系统的底层运转机制。     

Cooperative cache-based data access in ad hoc networks

Cooperative caching, in which multiple nodes share and coordinate cached data, is widely used to improve Web performance in wired networks. However, resource constraints and node mobility have limited the application of these techniques in ad hoc networks. We propose caching techniques that use the underlying routing protocols to overcome these constraints and further improve performance.     

弱电系统中的地线干扰与接地方法

介绍了地线的干扰机理以及减小地线干扰的对策和接地的基本方法.在电子电路中,地线不仅为电路提供一个电位公共参考点,而且也为电流提供一条能够流回源的低阻抗路径.由于地线存在阻抗,当电流流过地线时,会在地线上产生电压差,从而形成地线干扰,严重时将会影响电路的正常工作.减小或消除地线干扰的主要方法是减小地线的阻抗和地线电流.为此,可以针对不同的信号频率及干扰性质,根据系统的结构和功能采用相应的接地方式,将接地、屏蔽及滤波等措施结合使用.