超高相对分子质量聚乙烯纤维研究进展

介绍了超高分子质量聚乙烯纤维的制备、表面改性及应用的研究进展 ,指出了今后超高分子质量聚乙烯纤维的研究及应用的发展方向     

应用实时全息术和散斑照相术测量岩石的弹性参数

本文介绍用激光实时全息术测量岩石的泊松比μ,用散斑照相放大术测量岩石的杨氏模量E,进而由弹性理论中的关系式G=E/(2(1+μ))算出岩石的切变模量G。由此可以获得所测岩石的弹性参数。     

RS码频域纠错编码在激光对潜通信信道中的实现方法

介绍了信道编码在激光对潜通信系统中的重要作用，介绍了频域编译ＲＳ码的基本方法，并给出了脉冲位置调制信道的ＲＳ码频域编译码的计算机模拟方法和结果。     

Total transfer capability computation for multi-area power systems

This paper presents a method for multi-area power system total transfer capability (TTC) computation. This computation takes into account the limits on the line flows, bus voltage magnitude, generator reactive power, voltage stability, as well as the loss of line contingencies. The multi-area TTC problem is solved by using a network decomposition approach based on REI-type network equivalents. Each area uses REI equivalents of external areas to compute its TTC via the continuation power flow (CPF). The choice and updating procedure for the continuation parameter employed by the CPF is implemented in a distributed but coordinated manner. The proposed method leads to potential gains in the computational efficiency with limited data exchanges between areas. The developed procedure is successfully applied to the three-area IEEE 118-bus test system. Numerical comparisons between the integrated and the proposed multi-area solutions are presented for validation.     

用于频率合成器的低损耗声表面波滤波器

简述了产生声表面波滤波器插入损耗的主要机理和获得低损耗的原则；介绍了根据此原则对１００～５００ＭＨｚ５种滤波器的研制过程和结果。实验表明，采用镜像阻抗连接换能器结构可达到３～４ｄＢ的低损耗，并成功地应用于频率合成器中。     

Nd：MgO：LiNbO3晶体的荧光光谱及其双晶体腔内互倍频实验

采用激光感生荧光技术测量了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３晶体的偏振荧光光谱，简要地说明了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３双晶体腔内互倍频的基本原理，并在实验中用染料激光作泵浦源实现了其双晶体腔内互倍频运转；得到５４３ｎｍ横模倍频绿光单端输出约ＹＭＷ，腔前泵浦阈值约３８ＭＷ，总转换效率约为１．３％。     

大口径管道带水抢修

包头地区1996年5月3日发生6.4级强烈地震,给包钢生产造成重大损失,地震发生后,包钢生产用动力系统发生多起事故.本文针对4#高炉工业回水管道(φ1220×10)震后发生断裂,如何在保证不停止生产的前提下,采取什么措施进行管道带水抢修进行了阐述,本文是经过现场抢修过程总结而来,对今后大口径管道带水抢修提供了宝贵的经验.     

Comparative severity of respiratory lesions of sialodacryoadenitis virus and Sendai virus infections in LEW and F344 rats

In several chronic diseases, lesions are more severe in LEW rats than in F344 rats. To determine whether or not acute viral diseases also are more severe in LEW rats than in F344 rats, we inoculated 6-7-week-old LEW and F344 rats with 10(7.2) cell culture infective units of sialodacryoadenitis virus or 10(4.7) infective units of Sendai virus. Twenty-four rats of each strain were given each virus. Lesions in nasal passages, tracheas, intrapulmonary airways, and pulmonary alveoli in 6 or 12 rats inoculated with each virus were assessed by scoring 5, 10, and 14 days after inoculation. Both viruses caused typical patchy necrotizing rhinitis, tracheitis, bronchitis, and bronchiolitis, with multifocal pneumonitis, in rats of both strains. Mean lesion indices for LEW rats given sialodacryoadenitis virus were significantly different from those for F344 rats for nasal passages on days 10 (0.999 vs. 0.680) and 14 (0.736 vs. 0.278), bronchi on day 5 (0.479 vs. 0.361), and alveoli on day 5 (0.677 vs. 0.275). Lesion indices for LEW rats given Sendai virus were significantly different from those for F344 rats for nasal passages on days 10 (1.000 vs. 0.611) and 14 (0.778 vs. 0.583); trachea on day 10 (0.625 vs. 0.028); bronchi on days 5 (0.476 vs. 0.331), 10 (0.123 vs. 0.013), and 14 (0.038 vs. 0); and alveoli on days 5 (0.413 vs. 0.114) and 10 (0.185 vs. 0.020). Thus, at the tested doses, both viruses caused more severe respiratory tract lesions in LEW rats than in F344 rats.     

Influence of lattice self-heating and hot-carrier transport ondevice performance

As device technologies improve, the traditional drift-diffusion transport model becomes inadequate to predict the performance of state-of-the-art semiconductor devices. The reasons are believed to be the larger field and field gradient inside advanced devices which cause lattice heating and hot carrier nonlocal transport phenomena. For more accurate prediction on device performance, a new device simulator capable of full thermodynamic simulation was developed. The carrier and carrier energy transport equations are directly derived from the Boltzmann transport equation, and the energy transfer among electrons, holes and crystal lattice takes into account most of the possible mechanisms. This simulator was used to simulate the DC behavior of a BJT and a half-micron NMOS. The simulation results show that for advanced devices, not only the drift-diffusion model becomes inadequate, but including only one of the two thermal effects results in error in simulated device characteristics