地震勘探震源药柱技术进展

介绍国内外震源药柱产品现状,着重介绍了湖北凯龙化工集团股份有限公司近期所取得的技术进展,探讨了一些施工设想及地震勘探震源药柱今后可能的发展方向.     

换热网络数值模拟稳定性分析

换热网络的数值模拟在换热网络的定量分析中起着重要作用。但在模拟计算中,有时表现出数值稳定性差。提高数值稳定性的方法,目前多通过改善算法来实现。本文通过对换热网络数值模拟的误差分析,提出了误差放大因子的概念,并依此选择迭代变量。通过对迭代变量的选择,达到提高换热网络数值模拟稳定性的目的。     

死髓变色前牙的激光漂白治疗临床评价

本文的研究目的是探讨激光冠内漂白治疗死髓牙变色的治疗作用。材料与方法 :漂白基本操作同激光活髓牙变色的漂白操作程序。先将牙龈及口唇有效防护 ,将漂白药物放在唇舌两面并同时封入根冠内。结果 :所有牙齿的灰暗变色均有 3- 5级的色度提高。平均治疗次数为 3.4± 0 .75 ,脱色 85 %以上的占 89%。结论 :牙齿创伤和牙髓分解是冠内变色的常见原因 ,激光冠内漂白是治疗这种变色的有效手段 ,可以完全恢复患者的自信。     

硅中硼离子注入校准样品的研制

本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。     

Dipole radiation in the proximity of a chiral slab

Radiation of an electric dipole located along an arbitrary direction in the presence of a chiral slab is formulated using matrix analysis in conjunction with Fourier transform techniques. Moreover, dyadic Green's function of such a structure may be determined for further investigation porpose.     

双辊铸轧机生产工艺对组织和性能的影响

就用双辊铸轧机(TRC)生产薄、宽铸轧带技术进行研究并优化铸轧工艺。研究结果表明：3mm厚的铸轧带不仅表面变形．而且整个厚度内部层都发生变形，表面层的铝基中具有较高的合金元素饱和度。     

非平衡等离子体协同作用光催化剂催化降解苯

采用非平衡等离子体与光催化剂相结合,对苯的降解进行了实验研究。考察了以不同吸附能力的玻璃球和γ-Al2O3为载体对苯降解率、碳平衡、CO2选择性、NOx及O3生成量的影响;研究了以γ-Al2O3为载体时,水蒸气含量对苯的降解率、碳平衡、CO2选择性、NOx及O3生成量的影响。实验结果表明,以具有吸附性的γ-Al2O3为载体可提高苯的降解率;当能量密度为618J/L时,苯的降解率可达98%;同时可降低O3的生成量,但NOx生成量增加;以γ-Al2O3为载体时,随水蒸气含量的增加,苯的降解率降低,特别是在低能量密度时,水蒸气对苯降解率的影响更为显著,但水蒸气的加入可抑制O3的生成,同时可提高碳平衡值。     

Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses

Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low V_d-stress and in high V_d-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low V_d-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress