A Semantic Future for AI

Computing must become much more human centered--for example, by presenting personalized information to users and by respecting personal preferences when controlling multiple devices or invoking various services. Appropriate representation of the information's semantics and of the functionality of devices and services will be critical to such personalized computing. Symbolic artificial intelligence techniques provide the method of choice for the required semantic-representation and reasoning capabilities.     

Finite-difference time-domain simulation of scattering from objectsin continuous random media

A three-dimensional (3D) finite-difference time-domain (FDTD) scheme is introduced to model the scattering from objects in continuous random media. FDTD techniques have been previously applied to scattering from random rough surfaces and randomly placed objects in a homogeneous background, but little has been done to simulate continuous random media with embedded objects where volumetric scattering effects are important. In this work, Monte Carlo analysis is used in conjunction with FDTD to study the scattering from perfectly electrically conducting (PEC) objects embedded in continuous random media. The random medium models under consideration are chosen to be inhomogeneous soils with a spatially fluctuating random permittivities and prescribed correlation functions. The ability of frequency averaging techniques to discriminate objects in this scenarion is also briefly investigated. The simulation scheme described in this work can be adapted and used to help in interpreting the scattered field data from targets in random environments such as geophysical media, biological media, or atmospheric turbulence     

Quantitative prediction of the degree of pollution of effluent from reactive dye mixtures

By using mathematical formulae developed in previous studies, certain pollution parameters of dye effluent obtained from reactive dyeing with a single dye can be predicted with good accuracy. In this study, the degree of pollution of reactive dyeing effluent using dye mixtures was also predicted by other approaches, such as linear and non-linear regression. The prediction accuracy was found to be satisfactory.     

The zinc-rich corner of the Zn-Fe-Ni-Si quaternary system at 450 °C

Following up on recent studies of the Zn-rich corners of the Zn-Fe-Ni and Zn-Fe-Si ternary systems, a 450 °C isothermal section of the Zn-Fe-Ni-Si quaternary phase diagram with the Zn composition being fixed at 93 at.% was determined experimentally using optical microscopy, scanning electron microscopy (SEM) coupled with energy dispersive x-ray spectroscopy (EDS), and x-ray diffractometry (XRD). FeSi was found to be in equilibrium with almost all phases in the section, including the T, ζ, Ni-δ, NiSi₂, and FeSi₂ phases, as well as the liquid phase (L). Silicon solubilities in the T, ζ, and Ni-δ phases were rather limited. However, the solubilities of Fe and Zn in the NiSi₂ phase, at 4.5 at.% and 7.2 at.%, respectively, were appreciable. The existence of the (L+NiSi₂+Ni-δ) three-phase equilibrium state apparently prevents other Ni-Si compounds from entering equilibrium with the liquid at 450 °C. No true quaternary compound was found in the study.     

Metal-insulator-semiconductor solar cell under gamma irradiation

The performance of a home made MIS–p-Si solar cell was experimentally studied under various gamma irradiation doses (up to 500 Mrad). The effect of radiation dose on the I−V and C−V characteristics was investigated in this work. The obtained results showed that all the output parameters of the cells under investigation were degraded with gamma radiation exposure. In addition, the effects of fabrication conditions (metal thickness and adding of antireflection coating) on the cell output parameters were also investigated.     

新疆伊犁托海水电站拱坝坝体变形监测分析

根据托海拱坝5号坝段、7号坝段例垂线实测资料分析，说明了新疆寒冷地区坝体采取聚胺脂喷涂施工措施后对坝体变形的影响，以及右坝肩渗漏对右坝肩岩体的影响，分析结果为托海水电站通过国家电力公司大坝安全监察中心大坝安全首次定检提供了科学依据。     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.     

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