Forming mental models in learning operating procedures for terminalequipment

People faced with an unfamiliar product or service tend to fall back on mental models based on analogical relationships with familiar products or services. Two experiments on the analogical relationships or metaphors that people might use when operating a communications terminal are described. In the first experiment, the role previously acquired operating knowledge has in determining the mental models people use when directory dialing with novel equipment is examined. In a second experiment, it is shown that an explicit appeal to an analogy between conventional mail and electronic mail can help users learn to use an electronic mail system, and make it easier for them to remember how to use the system as long as 90 days after initial exposure. It is concluded that the mental model is constructed only from the user's operating knowledge acquired as a result of past experiences, and the metaphor method is effective when the instructions are metaphorically taught     

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping andInGaAs emitter contacts

The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×10⁸ h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology     

Using precise data sets on farming and pesticide properties to verify a diffuse pollution hydrological model for predicting pesticide concentration.

Verification of a diffuse pollution model involves comparing results actually observed with those predicted by precise model inputs. Acquisition of precise model inputs is, however, problematic. In particular, when the target catchment is large and substantial estimation uncertainty exists, not only model verification but also prediction is difficult. Therefore, in this study, rice-farming data were collected for all paddy fields from all farmers in a catchment and pesticide adsorption and degradation rates in paddy field soil samples were measured to obtain precise model inputs. The model inputs successfully verified the model's capability to predict pesticide concentrations in river water. Sensitivity analyses of the model inputs elucidated the processes significantly affecting pesticide runoff from rice farms. Pesticide adsorption and degradation rates of the soil did not significantly affect pesticide concentrations, although pesticide discharge to river water accounted for less than 50% of the total quantity of pesticide applied to fields, possibly owing to pesticide adsorption and degradation. The timing of increases in pesticide concentrations in river water was affected mostly by the farming schedule, including the time of pesticide application and irrigation, and secondarily by rainfall events.     

Reliability Modeling and Analysis of Communication Networks with Dependent Failures

This paper presents a new model to study the reliability of communication networks in which link failures are statistically dependent. The approach tries to identify and model explicitly the events that cause communication link failures. No conditional probabilities are needed, and so two major difficulties inherent to them, namely, an exponential number of conditional probabilities to deal with and a consistency requirement to satisfy, are avoided. For reliability computations, some existing algorithms for finding network reliability can be used with minor modifications and no significant increase in computational complexity.     

The dominance of the K I-field for a crack under stress wave loading

The extent of the dominant singular field is investigated for a finite crack under stress wave loading. Using a boundary integral equation method the complete solution as well as the near field solution is determined. A comparison of the two fields indicates that the singular field dominates within a small domain at the crack tip. The size of the dominance region in the dynamic case may be very different from that in the static case.     

Method of selecting the regularisation parameter for microwaveimaging

The Tikhonov regularisation technique is widely used in the solution of inverse scattering problems. One of the difficulties in applying this technique is the proper selection of the associated regularisation parameter. Based on a stochastic model of the reconstruction process, a simple method is presented for selecting this parameter for an efficient implementation of various microwave imaging methods     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

A digital automatic current control system based on an optimumassumed model

In this paper, a new ACR (automatic current regulator) scheme is introduced for brushless DC motors. It consists of a model closely resembling the motor and PWM inverter, an assumed rising pattern of the current, and a parameter estimation. Using the control scheme, the mean value of the motor current is kept at the reference current, and the transient current of the motor is kept equal to the rising pattern. For the disturbance, because of DC-line voltage change, the proportional path from the error to the duty cycle of the PWM signal stabilizes the ACR. This ACR scheme can be realized with a microcomputer