Assessing stem cell research productivity

Honour Index (HoI), a method to evaluate research performance within different research fields, was derived from the impact factor (IF). It can be used to rate and compare different categories of journals. HoI was used in this study to determine the scientific productivity of stem cell research in the Asian Four Dragons (Hong Kong, Singapore, South Korea and Taiwan) from 1981 to 2001. The methodology applied in this study represents a synthesis of universal indicator studies and bibliometric analyses of subfields at the micro-level. We discuss several comparisons, and conclude the developmental trend in stem cell research for two decades. This revised version was published online in August 2006 with corrections to the Cover Date.     

Micro-prober for wafer-level low-noise measurements in MOS devices

Low-frequency noise measurements represent an interesting investigation technique for the characterization of the quality and reliability of microelectronic materials and devices. Performing meaningful noise measurements at low and very low (f<1 Hz) frequencies, however, may be quite challenging, particularly because of the many sources of interference that superimpose on the noise signal. For this reason, packaged samples are preferred because they allow accurate shielding from the external environment, and because keeping the sample in close proximity to the low-noise biasing system and amplifier reduces microphonic and electromagnetic disturbances. Notwithstanding this, the possibility of performing low-frequency noise measurements at wafer level would be quite interesting, both because of the ease of obtaining wafer-level samples from industries with respect to packaged samples, and because this would avoid possible packaging-process induced device degradation. The purpose of this work is to demonstrate that it is, in fact, possible to design and build a dedicated probe system for performing high-sensitivity, low-frequency noise measurements on metal-oxide-semiconductor devices at wafer level.     

A comparison of transformation methods for evaluating two‐dimensional weakly singular integrals

Accurate numerical evaluation of integrals arising in the boundary element method is fundamental to achieving useful results via this solution technique. In this paper, a number of techniques are considered to evaluate the weakly singular integrals which arise in the solution of Laplace's equation in three dimensions and Poisson's equation in two dimensions. Both are two‐dimensional weakly singular integrals and are evaluated using (in a product fashion) methods which have recently been used for evaluating one‐dimensional weakly singular integrals arising in the boundary element method. The methods used are based on various polynomial transformations of conventional Gaussian quadrature points where the transformation polynomial has zero Jacobian at the singular point. Methods which split the region of integration into sub‐regions are considered as well as non‐splitting methods. In particular, the newly introduced and highly accurate generalized composite subtraction of singularity and non‐linear transformation approach (GSSNT) is applied to various two‐dimensional weakly singular integrals. A study of the different methods reveals complex relationships between transformation orders, position of the singular point, integration kernel and basis function. It is concluded that the GSSNT method gives the best overall results for the two‐dimensional weakly singular integrals studied. Copyright © 2002 John Wiley & Sons, Ltd.     

Effect of Strain Rate on Discontinuous Flow and Mechanical Characteristics of High-Nitrogenous Steel

Experimental study on the effect of strain rate on discontinuous flow and mechanical characteristics of the high-nitrogenous steel Kh23AG19F has been performed. Within the range of strain rates from 4.62 · 10^-5 to 1.85 · 10 ^-4 s^-1, discontinuous flow, reflected by serration on the tensile diagram, is chiefly determined by intergranular deformation mechanisms. Under strain rates over 1.85 · 10^-2 s^-1, combined deformation modes prevail, which cause a change in the character of discontinuous flow and transform a serrated tensile diagram into a wavy graph, with the yield stress of steel increased significantly.     

A redundant multivalued logic for a 10-Gb/s CMOS demultiplexer IC

A redundant multivalued logic is proposed for high-speed communication ICs. In this logic, serial binary data are received and converted into parallel redundant multivalued data. Then they are restored into parallel binary data. Because of the multivalued data conversion, this logic makes it possible to achieve higher operating speeds than that of a conventional binary logic. Using this logic, a 1:4 demultiplexer (DEMUX, serial-parallel converter) IC was fabricated using a 0.18-/spl mu/m CMOS process. The IC achieved an operating speed of 10 Gb/s with a supply voltage of only 1.3 V and with power consumption of 38 mW. This logic may achieve CMOS communication ICs with an operating speed several times greater than 10 Gb/s.     

Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)

Gate-lag effects are characterized in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) by means of measurements and numerical device simulations. Gate lag increasingly affects device switching at increasing ungated recess extension, suggesting that responsible deep levels be located at the ungated, recess surface of the HFET. Gate lag diminishes by making the off-state gate-source voltage less negative and by increasing the drain bias. Increasing the temperature makes the turn-on transient faster at low drain bias, while slightly delaying it at high drain bias. Numerical device simulations accounting for acceptor-like traps at the ungated surface predict gate-lag phenomena in good agreement with experiments, reproducing correctly the observed bias and temperature dependences. Simulations show that surface states behave, during the turn-on transient, as hole traps capturing holes attracted at the ungated surface by the negative trapped charge.     

Effect of film thickness on hydrogen content in a-Si : H

The hydrogen content, its depth distribution, and its bonding configuration have been studied in hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapor deposition with hydrogen-diluted silane. Nuclear reaction analysis and infrared spectroscopy were used to determine the total amount of hydrogen and its bonded component, respectively. It has been established that the total concentration of hydrogen does not depend on the film thickness, and has a uniform depth profile. The concentration of bonded hydrogen changes with the film thickness within the measurement accuracy. The data obtained suggest the presence of molecular (non-bonded) hydrogen, uniformly distributed in concentration across the film thickness.     

Lateral ion implant straggle and mask proximity effect

Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.