首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   297552篇
  免费   3440篇
  国内免费   1714篇
电工技术   5245篇
综合类   270篇
化学工业   41376篇
金属工艺   15249篇
机械仪表   9907篇
建筑科学   5878篇
矿业工程   2299篇
能源动力   7363篇
轻工业   18308篇
水利工程   3542篇
石油天然气   8354篇
武器工业   37篇
无线电   35509篇
一般工业技术   64713篇
冶金工业   55865篇
原子能技术   7820篇
自动化技术   20971篇
  2021年   2683篇
  2020年   2036篇
  2019年   2619篇
  2018年   4701篇
  2017年   4713篇
  2016年   5025篇
  2015年   3060篇
  2014年   5092篇
  2013年   12999篇
  2012年   7976篇
  2011年   10658篇
  2010年   8649篇
  2009年   9883篇
  2008年   10114篇
  2007年   10184篇
  2006年   8863篇
  2005年   8063篇
  2004年   7505篇
  2003年   7276篇
  2002年   6778篇
  2001年   7147篇
  2000年   6636篇
  1999年   6927篇
  1998年   18073篇
  1997年   12372篇
  1996年   9645篇
  1995年   6901篇
  1994年   6054篇
  1993年   6206篇
  1992年   4440篇
  1991年   4425篇
  1990年   4276篇
  1989年   4054篇
  1988年   3924篇
  1987年   3296篇
  1986年   3383篇
  1985年   3693篇
  1984年   3422篇
  1983年   3173篇
  1982年   2949篇
  1981年   2898篇
  1980年   2857篇
  1979年   2795篇
  1978年   2764篇
  1977年   2973篇
  1976年   3748篇
  1975年   2468篇
  1974年   2330篇
  1973年   2401篇
  1972年   2119篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
51.
Gilbenclamide, a widely used potent hypoglycaemic agent was solubllized using β -Cyclodextrin and β -Cyclodextrin derivatives. Complexes were prepared by kneading method in a molar ratio of 1:1 of the drug and the cyclodextrlns respectively. The Glibenclamide β -Cyelocextrin complex was characterized and evaluated by I.R. studies, Differential Scanning Calorimotry 6 X-ray diffractometry. The in-vitro dissolution rates of drug from inclusion complexes of β Cyclodextrins and its derivatives were compared. A significant Improvement In dissolution lor, rates of Gllbenclamide was observed with Inclusion complexes of all the Cyclodextrins. However, the solubilizing effect was more in case of β-Cyclodextrin derivatives.  相似文献   
52.
A distributed problem solving system can be characterized as a group of individual cooperating agents running to solve common problems. As dynamic application domains continue to grow in scale and complexity, it becomes more difficult to control the purposeful behavior of agents, especially when unexpected events may occur. This article presents an information and knowledge exchange framework to support distributed problem solving. From the application viewpoint the article concentrates on the stock trading domain; however, many presented solutions can be extended to other dynamic domains. It addresses two important issues: how individual agents should be interconnected so that their resources are efficiently used and their goals accomplished effectively; and how information and knowledge transfer should take place among the agents to allow them to respond successfully to user requests and unexpected external situations. The article introduces an architecture, the MASST system architecture, which supports dynamic information and knowledge exchange among the cooperating agents. The architecture uses a dynamic blackboard as an interagent communication paradigm to facilitate factual data, business rule, and command exchange between cooperating MASST agents. The critical components of the MASST architecture have been implemented and tested in the stock trading domain, and have proven to be a viable solution for distributed problem solving based on cooperating agents  相似文献   
53.
This paper analyzes probability of bit-error (Pe) performance of asynchronous bandlimited direct-sequence code-division multiple-access systems with binary phase-shift keying spreading. The two present methods of Pe analysis under bandwidth-efficient pulse shaping: the often-cited standard Gaussian approximation and the characteristic function (CF) method suffer from either a low accuracy in regions of low Pe (< 10-3) or a prohibitively large computational complexity. The paper presents an alternate method of Pe analysis with moderate computational complexity and high accuracy based on a key observation. A sequence of chip decision statistics (whose sum yields a bit statistic) forms a stationary, m-dependent sequence when conditioned on the chip delay and phase offset of each interfering signal. This observation permits the generalization of the improved Gaussian approximation previously derived for the rectangular pulse and the derivation of a numerically efficient approximation based on the CF method. Numerical examples of systems using the square-root raised-cosine and IS-95 pulses illustrate THE P e performance, user capacity and the accuracy of the proposed method  相似文献   
54.
Translated from Atomnaya Énergiya, Vol. 66, No. 6, pp. 423–424, June, 1989.  相似文献   
55.
Translated from Atomnaya Énergiya, Vol. 67, No. 3, pp. 215–216, September, 1989.  相似文献   
56.
Geomechanical aspects of the storage of radioactive waste in salt formations have been studied extensively using finite element methods over the last 20 years. In consequence a range of computer programs and associated modelling techniques have been assembled. The paper is based on a benchmark exercise to compare the predictive abilities of a number of these programs and highlights the difficulties of making reliable a-priori estimates of long term behaviour.  相似文献   
57.
58.
A method for fabricating single crystal blades that combines the techniques of seed crystals and selection is suggested. The method realizes the advantages of both techniques, i.e., the high structural perfection and the possibility of fabricating single crystals with specified spatial orientation. Metallographic and x-ray diffraction analyses are used to study the processes of nucleation of the single crystal structure of blade castings fabricated from high-temperature nickel alloys by the method of selection and seed crystals. A commercial process for fabricating cast single crystal turbine blades by the new method is suggested.  相似文献   
59.
This paper demonstrates the use of computer simulation for topological design and performance engineering of transparent wavelength-division multiplexing metropolitan-area networks. Engineering of these networks involves the study of various transport-layer impairments such as amplifier noise, component ripple, chirp/dispersion, optical crosstalk, waveform distortion due to filter concatenation, fiber nonlinearities, and polarization effects. A computer simulation methodology composed of three main simulation steps is derived and implemented. This methodology obtains performance estimations by applying efficient wavelength-domain simulations on the entire network topology, followed by time-/frequency-domain simulations on selected paths of the network and finally Q-budgeting on an identified worst case path. The above technique provides an efficient tool for topological design and network performance engineering. Accurate simulation models are presented for each of the performance impairments, and the computer simulation methodology is used for the design and engineering of a number of actual metro network architectures  相似文献   
60.
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号