全文获取类型
收费全文 | 297552篇 |
免费 | 3440篇 |
国内免费 | 1714篇 |
专业分类
电工技术 | 5245篇 |
综合类 | 270篇 |
化学工业 | 41376篇 |
金属工艺 | 15249篇 |
机械仪表 | 9907篇 |
建筑科学 | 5878篇 |
矿业工程 | 2299篇 |
能源动力 | 7363篇 |
轻工业 | 18308篇 |
水利工程 | 3542篇 |
石油天然气 | 8354篇 |
武器工业 | 37篇 |
无线电 | 35509篇 |
一般工业技术 | 64713篇 |
冶金工业 | 55865篇 |
原子能技术 | 7820篇 |
自动化技术 | 20971篇 |
出版年
2021年 | 2683篇 |
2020年 | 2036篇 |
2019年 | 2619篇 |
2018年 | 4701篇 |
2017年 | 4713篇 |
2016年 | 5025篇 |
2015年 | 3060篇 |
2014年 | 5092篇 |
2013年 | 12999篇 |
2012年 | 7976篇 |
2011年 | 10658篇 |
2010年 | 8649篇 |
2009年 | 9883篇 |
2008年 | 10114篇 |
2007年 | 10184篇 |
2006年 | 8863篇 |
2005年 | 8063篇 |
2004年 | 7505篇 |
2003年 | 7276篇 |
2002年 | 6778篇 |
2001年 | 7147篇 |
2000年 | 6636篇 |
1999年 | 6927篇 |
1998年 | 18073篇 |
1997年 | 12372篇 |
1996年 | 9645篇 |
1995年 | 6901篇 |
1994年 | 6054篇 |
1993年 | 6206篇 |
1992年 | 4440篇 |
1991年 | 4425篇 |
1990年 | 4276篇 |
1989年 | 4054篇 |
1988年 | 3924篇 |
1987年 | 3296篇 |
1986年 | 3383篇 |
1985年 | 3693篇 |
1984年 | 3422篇 |
1983年 | 3173篇 |
1982年 | 2949篇 |
1981年 | 2898篇 |
1980年 | 2857篇 |
1979年 | 2795篇 |
1978年 | 2764篇 |
1977年 | 2973篇 |
1976年 | 3748篇 |
1975年 | 2468篇 |
1974年 | 2330篇 |
1973年 | 2401篇 |
1972年 | 2119篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
51.
N. M. Sanghavi Hema Venkatesh Varsha Tandel 《Drug development and industrial pharmacy》1994,20(7):1275-1283
Gilbenclamide, a widely used potent hypoglycaemic agent was solubllized using β -Cyclodextrin and β -Cyclodextrin derivatives. Complexes were prepared by kneading method in a molar ratio of 1:1 of the drug and the cyclodextrlns respectively. The Glibenclamide β -Cyelocextrin complex was characterized and evaluated by I.R. studies, Differential Scanning Calorimotry 6 X-ray diffractometry. The in-vitro dissolution rates of drug from inclusion complexes of β Cyclodextrins and its derivatives were compared. A significant Improvement In dissolution lor, rates of Gllbenclamide was observed with Inclusion complexes of all the Cyclodextrins. However, the solubilizing effect was more in case of β-Cyclodextrin derivatives. 相似文献
52.
A distributed problem solving system can be characterized as a group of individual cooperating agents running to solve common problems. As dynamic application domains continue to grow in scale and complexity, it becomes more difficult to control the purposeful behavior of agents, especially when unexpected events may occur. This article presents an information and knowledge exchange framework to support distributed problem solving. From the application viewpoint the article concentrates on the stock trading domain; however, many presented solutions can be extended to other dynamic domains. It addresses two important issues: how individual agents should be interconnected so that their resources are efficiently used and their goals accomplished effectively; and how information and knowledge transfer should take place among the agents to allow them to respond successfully to user requests and unexpected external situations. The article introduces an architecture, the MASST system architecture, which supports dynamic information and knowledge exchange among the cooperating agents. The architecture uses a dynamic blackboard as an interagent communication paradigm to facilitate factual data, business rule, and command exchange between cooperating MASST agents. The critical components of the MASST architecture have been implemented and tested in the stock trading domain, and have proven to be a viable solution for distributed problem solving based on cooperating agents 相似文献
53.
This paper analyzes probability of bit-error (Pe) performance of asynchronous bandlimited direct-sequence code-division multiple-access systems with binary phase-shift keying spreading. The two present methods of Pe analysis under bandwidth-efficient pulse shaping: the often-cited standard Gaussian approximation and the characteristic function (CF) method suffer from either a low accuracy in regions of low Pe (< 10-3) or a prohibitively large computational complexity. The paper presents an alternate method of Pe analysis with moderate computational complexity and high accuracy based on a key observation. A sequence of chip decision statistics (whose sum yields a bit statistic) forms a stationary, m-dependent sequence when conditioned on the chip delay and phase offset of each interfering signal. This observation permits the generalization of the improved Gaussian approximation previously derived for the rectangular pulse and the derivation of a numerically efficient approximation based on the CF method. Numerical examples of systems using the square-root raised-cosine and IS-95 pulses illustrate THE P e performance, user capacity and the accuracy of the proposed method 相似文献
54.
Translated from Atomnaya Énergiya, Vol. 66, No. 6, pp. 423–424, June, 1989. 相似文献
55.
A. A. Konstantinov N. V. Kurenkov A. B. Malinin T. E. Sazonova S. V. Sepman 《Atomic Energy》1989,67(3):696-698
Translated from Atomnaya Énergiya, Vol. 67, No. 3, pp. 215–216, September, 1989. 相似文献
56.
N.C. Knowles 《Nuclear Engineering and Design》1989,116(1)
Geomechanical aspects of the storage of radioactive waste in salt formations have been studied extensively using finite element methods over the last 20 years. In consequence a range of computer programs and associated modelling techniques have been assembled. The paper is based on a benchmark exercise to compare the predictive abilities of a number of these programs and highlights the difficulties of making reliable a-priori estimates of long term behaviour. 相似文献
57.
58.
A method for fabricating single crystal blades that combines the techniques of seed crystals and selection is suggested. The method realizes the advantages of both techniques, i.e., the high structural perfection and the possibility of fabricating single crystals with specified spatial orientation. Metallographic and x-ray diffraction analyses are used to study the processes of nucleation of the single crystal structure of blade castings fabricated from high-temperature nickel alloys by the method of selection and seed crystals. A commercial process for fabricating cast single crystal turbine blades by the new method is suggested. 相似文献
59.
Antoniades N. Boskovic A. Tomkos I. Madamopoulos N. Lee M. Roudas I. Pastel D. Sharma M. Yadlowsky M.J. 《Selected Areas in Communications, IEEE Journal on》2002,20(1):149-165
This paper demonstrates the use of computer simulation for topological design and performance engineering of transparent wavelength-division multiplexing metropolitan-area networks. Engineering of these networks involves the study of various transport-layer impairments such as amplifier noise, component ripple, chirp/dispersion, optical crosstalk, waveform distortion due to filter concatenation, fiber nonlinearities, and polarization effects. A computer simulation methodology composed of three main simulation steps is derived and implemented. This methodology obtains performance estimations by applying efficient wavelength-domain simulations on the entire network topology, followed by time-/frequency-domain simulations on selected paths of the network and finally Q-budgeting on an identified worst case path. The above technique provides an efficient tool for topological design and network performance engineering. Accurate simulation models are presented for each of the performance impairments, and the computer simulation methodology is used for the design and engineering of a number of actual metro network architectures 相似文献
60.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献