Prediction of environmental risks from explosions based on a set of coupled geophysical fields

This paper presents the results of experimental studies and numerical calculations of weather-dependent ecological risks to social infrastructure facilities from the effects of powerful infrasonic vibrations generated by man-made and natural explosions. The results were obtained by applying an original ecologically safe approach developed by the authors and involving the use of seismic vibrators as sources simulating explosions but having much less power compared to the explosions. Such sources generate both seismic and acoustic (seismoacoustic) vibrations with precision metrological power and frequency-time characteristics, which, in contrast to explosions, ensures high reproducibility of research results. Results comparable to explosions are achieved due to the energy accumulation of weak vibroseismoacoustic signals. The propagation of infralow-frequency wave fields is studied depending on weather conditions and taking into account the effect of heterogeneity of the atmosphere. The results of the experiments are compared with those of numerical calculations.     

Influence of the structure on the deformation of metallic knitted fabric for reinforcing composite materials

Translated from Poroshkovaya Metallurgiya, No. 3, pp. 20–26, March, 1992.     

Methodology for Calculating Regulatory Indicators of the Reliability of Elements of Restored Gas Analytical Systems for Monitoring Chemical Environmental Pollution According to Experimental Reference Data

Theoretical Foundations of Chemical Engineering - A method has been developed for calculating the standard indicators of the reliability of elements of restored gas analytical systems for...     

A study of the effect of electron and proton irradiation on 4H-SiC device structures

The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration (N _d –N _a ) in the base electrode of Schottky diodes and JBS diodes based on 4H-SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate was 0.07–0.15 cm^–1 under electron irradiation and 50–70 cm^–1 under proton irradiation. It was shown that the current–voltage characteristics of the devices under study remain rectifying at electron irradiation doses of up to ~1017 cm^–2. It was demonstrated that the radiation hardness of the SiC-based devices under study substantially exceeds that of silicon p–i–n diodes with similar breakdown voltages.