用瑞利波检验高喷防渗墙的施工质量及地层分布特征

本文阐述了瞬态多道瑞利波探测的原理和方法，并将其应用到大堤高喷防渗墙施工质量的检验中，取得一定成效，测试结果与测压管观测结果对比，相互吻合，为类似工程的质量检验提供了一种可采用的检测手段。     

Formation mechanism of bainitic ferrite and carbide

Superledges on the broad faces of bainitic ferrite plates have been observed with transmission electron microscope (TEM). The observed superledges, ranging from less than 1 to 24 nm in height, are imaged in three dimension by way of tilt operation under TEM. Also, an array of smaller superledges are observed to pile up in front of a secondary phase. Pileup of superledges in front of a barrier is indicative of the mobility of an individual superledge. The precipitation of carbide associated with bainitic ferrite is also studied. It is observed that a carbide of a wedgelike shape may exist in front of a superledge with its tip(i.e., thinner end) penetrating the austenite and its root (the other end) originating at α:γ boundary. This condition indicates that the observed carbides may nucleate at the austenite side of α:γ phase boundary and grow toward austenite matrix. This article is based on a presentation made at the Pacific Rim Conference on the “Roles of Shear and Diffusion in the Formation of Plate-Shaped Transformation Products,” held December 18-22, 1992, in Kona, Hawaii, under the auspices of ASM INTERNATIONAL’S Phase Transformations Committee.     

7.5 Gb/s monolithically integrated clock recovery circuit using PLLand 0.3-μm gate length quantum well HEMT's

A monolithically integrated clock recovery (CR) circuit making use of the phase-locked loop (PLL) circuit technique and enhancement/depletion AlGaAs/GaAs quantum well-high electron mobility transistors (QW-HEMT's) with gate lengths of 0.3 μm has been realized. A novel preprocessing circuit was used. In the PLL a fully-balanced varactorless VCO was applied. The VCO has a center oscillating frequency of about 7.7 GHz and a tuning range greater than 500 MHz. A satisfactory clock signal has been obtained at a bit rate of about 7.5 Gb/s. The power consumption is less than 200 mW at a supply voltage of -5 V     

New efficient designs for XOR and XNOR functions on the transistorlevel

Two new methods are proposed to implement the exclusive-OR and exclusive-NOR functions on the transistor level. The first method uses non-complementary signal inputs and the least number of transistors. The other one improves the performance of the prior method but two more transistors are utilized. Both of them have been fully simulated by HSPICE on a SUN SPARC 2 workstation     

Effects of hot carrier induced interface state generation insubmicron LDD MOSFET's

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V_g ≃0.5 V_d in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states     

Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation

We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed Ge_xSi_1−x films grown on Si(100) substrates. The ion range is such that the Si/Ge_xSi_1−x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed Ge_xSi_1−x layers of similar x for irradiation doses up to 2.5 × 10¹⁴ Si/cm² is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed. On leave from Inst. voor Kern en Stralingsfysika, Catholic University of Leuven, Belgium.     

Dependence of critical current density on microstructure and processing of high-Tc superconductors

Microstructural origins for reduced weak-link behavior in high-J_c melt-processed YBCO, spray pyrolyzed thick films of Tl-1223, metallic precursor Y-124 polycrystalline powder-in-tube (PIT) wires and PIT Bi-2212/2223 are discussed. Since the materials studied are the highest J_c, polycrystalline, high-T_c superconductors fabricated worldwide, the results provide important guidelines for further improvements in superconducting properties, thereby enabling practical applications of these materials. It is found that strongly linked current flow within domains of melt-processed 123 occurs effectively through a single crystal path. In c-axis oriented, polycrystalline Tl-1223 thick films, local in-plane texture has been found to play a crucial role in the reduced weak-link behavior. Formation of “colonies” of grains with a common c-axis and modest in-plane misorientation was observed. Furthermore, a colony boundary in general has a varying misorientation along the boundary. Large regions comprised primarily of low angle boundaries were observed. Percolative transport through a network of such small angle boundaries appears to provide the nonweak-linked current path. Although powder-in-tube BSCCO 2212 and 2223 also appear to have a “colony” microstructure, there are some important differences. Colonies in BSCCO consist of stacks of grains with similar c-axis orientation in contrast to colonies in Tl-1223 films where few grains are stacked on top of one another. Furthermore, most grains within a colony in BSCCO have the same lateral dimensions as that of the colony, resulting largely largely in “twist” boundaries. Further microstructural characterization of high-J_c PIT 2212 and 2223 is currently underway. In the case of Y-124 wires, weak macroscopic in-plane texture is found. Additional measurements are underway to determine if a sharper, local in-plane texture also exists. It is found that in three of the four types of superconductors studied, reduced weak-link behavior can be ascribed to some degree of biaxial alignment between grains, either on a “local” or a “global” scale.