等规聚丙烯β晶型成核剂研究

精选了一系列有机和无机化合物为成核剂,使用砂浴法和热台法制备了一系列不同β晶含量的等规聚丙烯,发现最有效的β成核剂是溶靛素灰 IBL 和溶蒽素金黄 IGK,首次表明β成核剂具有排列紧密的稠球结构特征,且含有硫原子。     

国际乳业的热点论题：蛋白质标准化

介绍了蛋白质的标准化这一国际乳品界正热的研究和讨论题目，综述了蛋白质标准化的必要性和世界上目前采用的方法，展望了膜技术在蛋白质标准化上的应用前景。     

石蜡光氯化合成氯蜡－70的研究──（Ⅲ）反应过程致色因素考察及生色机理研究

氯蜡－７０是—应用广泛、性能优良的精细化工产品，其色泽是—重要的技术指标，直接影响着产品的质量和应用。本文考察了合成反应过程导致生色的因素，指出原料中含有的少量环烷烃、芳烃、杂环有机物及少量无机杂质能影响产品的色泽，实验表明温度过高，光源波长选择不当也是致色的重要原因。研究了致色的过程，提出其生色历程是按照β－消除反应机理进行的，并做了具体描述。     

葛洲坝水电站水轮机磨蚀评析

作为长江第一坝的葛洲坝水电站,其水轮机磨蚀情况引起国内同行的关注。根据长江的水沙特点、葛洲坝工程泥沙研究成果、十年来运行观测实践、水轮机运行及磨蚀修复状况,对葛洲坝水轮机磨蚀的现状进行了评论和剖析,提出了今后评价和解决葛洲坝水轮机磨蚀的九点建议及意见。     

管外上升R－113流体的沸腾换热试验

详细介绍了Ｒ－１１３流体管外上升流动的沸腾换热试验，包括试验台架、流量计和温度测量的修正，以及试验数据。拟合的换热关系式为ｑ＝５２８（Ｔｗ─Ｔｓ）１．３３。     

淀积条件对GDa—SiNx薄膜电学特性的影响

本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件，制备了优质非晶氮化硅薄膜，其介电常数为７．５、击穿强度为５．５ＭＶ／ｃｍ、电导率为１０－１３（Ωｃｍ）－１。     

Two-level optimal output feedback stabilizer design

The paper addresses the design of two-level power system stabilizers using an optimal reduced order model whose state variables are torque angles and speeds. The reduced order model retains their physical meaning and is used to design a two-level linear feedback controller that takes into account the realities and constraints of electrical power systems. The two-level control strategy is used, and a global control signal is generated from the output variables to minimize the effect of interactions. The effectiveness of this controller is evaluated and a multimachine system is given as an example to illustrate the advantages of the proposed method. Responses of the system with a two-level scheme and an optimal reduced order scheme are included for comparative analysis.     

Gate and drain currents in off-state buried-type p-channel LDDMOSFETs

The buried-type p-channel LDD MOSFETs biased at high positive gate voltage exhibit novel characteristics: (1) the ratio of the drain to gate currents is about 1×10^-3 to 5×10^-3; and (2) the gate and drain currents both are functions of only the gate voltage minus the n-well bias. Such characteristics are addressed based on the formation of the surface n ⁺ inversion layer due to the punchthrough of the buried channel to the underlying shallow p-n junction. The measured gate current is due to the Fowler-Nordheim tunneling of electrons from this inversion layer surface and the holes generated within the high-field oxide constitute the drain current. The n⁺ inversion layer surface potential is found to be equal to the n-well bias plus 0.55 V. As a result, both the oxide field and the gate and drain currents are independent of drain voltage