X-ray photoelectron spectroscopy characterization of the interface between Ag electrode and PVDF film treated by electric poling

Interface changes induced by electric poling treatment between an Ag electrode deposited by vacuum thermal evaporation and a polymer thin film have been investigated. The polymer film poly (vinylidene fluoride) (PVDF), a fluoropolymer of repeat unit (–CH₂–CF₂–) was treated under electric poling at high temperature of 90°C. The characterization was accomplished using X-ray photoelectron spectroscopy (XPS) as a primary tool. The results indicate that the piezoelectricity of PVDF thin films and adhesion force between polymer thin film and metallic electrode are improved by electric poling and chemical bond joint.     

Complete stability of cellular neural networks with time-varying delays

In this paper, the complete stability of cellular neural networks with time-varying delays is analyzed using the induction method and the contraction mapping principle. Delay-dependent and delay-independent conditions are obtained for locally stable equilibrium points to be located anywhere, which differ from the existing results on complete stability where the existence of equilibrium points in the saturation region is necessary for complete stability and locally stable equilibrium points can be in the saturation region only. In addition, some existing stability results in the literature are special cases of a new result herein. Simulation results are also discussed by use of two illustrative examples.     

基于测度贴近度的电子剪切散斑轮胎检测

本文把测度贴近度的概念引进到电子剪切散斑检测中,提出了一种基于测度贴近度的条纹形成算法。该算法大大地消除了条纹可见度对光照强度的依赖,提高了电子剪切散斑无损检测对工业环境的适应性,并且该算法可以在条纹产生的同时对其进行滤波,减轻了后续工作。本文从数学分析和实验两个角度证实了该算法的以上特点。     

SUPANET的入网控制技术

本文以西南交通大学四川省网络通信技术重点实验室提出的“单物理层用户数据传输平面的体系结构”(SUPA)为背景,通过分析比较现存的各种接纳控制策略和算法,提出了适合SUPA的接纳控制策略和算法。     

DEH控制系统在125 MW汽轮机上的应用

介绍了江西贵溪发电厂国产125MW机组调速系统的低压透平油纯电调改造的意义、方案选择及各相关系统的改造内容。改造后机组的运行情况良好，低压透平油纯电调改造，具有简单、实用、经济、可靠的特点，对同类型机组的技术改造具有借鉴意义。     

Electron impact collision strengths and oscillator strengths for Ni-like Nd, Sm, Eu, Gd, Ta, and W ions

Energy levels, oscillator strengths, and electron impact collision strengths have been calculated for Ni-like ions of Nd (Z = 60), Sm (Z = 62), Eu (Z = 63), Gd (Z = 64), Ta (Z = 73), and W (Z = 74) among the 249 levels belonging to the ([Ne])3s²3p⁶3d¹⁰, 3s²3p⁶3d⁹nl, 3s²3p⁵3d¹⁰nl, 3s3p⁶3d¹⁰nl (n = 4, 5; l = 0, 1, … , n − 1) configurations. Configuration interactions among these configurations have been included in the calculations. Collision strengths have been obtained at 20 scattered electron energies (5–20,000 eV) and they have been listed at six representative energies of 100, 400, 1000, 2500, 5000, and 10,000 eV in this work. Effective collision strengths have been obtained by assuming a Maxwellian electron velocity distribution at 24 temperatures ranging from 100 to 3000 eV. Our results are compared with those available in the literature. The relative difference is within 0.3% between our calculated energy levels and the corresponding experimental values wherever available. The energy levels are expected to be be accurate within 0.6%, while oscillator strengths and collision strengths for strong transitions are probably accurate to better than 20%. The complete dataset is available electronically from http://www.astronomy.csdb.cn/EIE/.     

Electrical Properties and Electroluminescence of 4H-SiC p-n Junction Diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001 ) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal aircooled quartz tube at around 1500 ℃and 1.33 × 104 Pa by employing SiH4 C2H4 H2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm2 ·V -1 ·s -1 with a carrier concentration of ～ 1016 cm-3 and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 × 1021 cm-3 with a mobility of 0.75 cm2 ·V -1 ·S -1. SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Aldoped 4H-SiC substrates. The C-V characteristics of the diodes were linear in the 1/C3-V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 ℃, which provides a potential for high-temperature applications.     

Challenges and R&D opportunities of smart distribution grids in China

In this paper, 5 investigations on the current states of power distribution grids in China have been introduced that cover the surveys of the practical distribution asset utilization, the simultaneity factor of feeder loading, the load compositions and characteristics, the urban reliability and the integration of distributed generations of renewable resources. Based on the survey results in the investigations, 12 Facts are clearly presented. It shows that the challenges to modernize the distribution grids in China are to improve the asset utilization rates, the electricity efficiencies and the reliability of distribution systems, as well as to integrate increasing amount of variable distributed renewable resources. Furthermore based on the challenges, 8 R&D opportunities have been identified.     

电测技术在人体骨骼力学性能分析中的应用

用电测实验应力分析方法,对人体管状长骨的力学性质,以及骨折的钢板皮外固定治疗中的力学问题,进行测量与分析。其结果对于推进力学理论在医学方面的应用,以及临床治疗骨折,具有实用价值。