Reactive carbon black having isocyanate or acyl azide group

Summary Introduction of isocyanate (NCO) group onto carbon black surface was achieved by the treatment of carbon black with toluene-2,4-diisocyanate. In addition, carbon black having acyl azide (CON₃) group, a precursor of NCO group, was prepared by the reaction of COCl or COOCOOC₂H₅ group on carbon black with NaN₃. The CON₃ group on carbon black was relatively stable at below 20°C but readily decomposed to NCO group by heating (Curtius rearrangement). By the reation of NCO group on carbon black with hydroxyl group of polymers, such as polypropylene glycol, polyethylene glycol, and polyvinyl alcohol, these polymers were found to be grafted onto carbon black.     

Surface structure and visible light photocatalytic activity of titanium–calcium hydroxyapatite modified with Cr(III)

The synthetic titanium–calcium hydroxyapatite (Ti–CaHap) particles were treated with different concentrations of aqueous Cr(NO₃)₃·9H₂O solution and the materials obtained were characterized by a variety of conventional techniques. The crystal structure and particle morphology of Ti–CaHap were essentially not altered by treating with Cr(III) solution. With increasing the Cr(III) concentration, the amount of Cr(III) in the products was increased and that of Ca(II) was decreased. XPS results revealed that the surface state of Cr of Ti–CaHap was trivalent. These facts allow us to infer that the Cr(III) was doped by substitution of surface Ca(II) of Ti–CaHap. Besides, IR results proved that increasing the Cr(III) concentration developed the surface Cr–OH band while the surface Ti–OH and P–OH bands of Ti–CaHap vanished. This imply that the formation of surface P–O-Cr(OH)₂ and Ti–O–Cr(OH)₂ groups, resulting the Cr(OH)₃-like layer on the surface of Ti–CaHap particles. The Cr(III)-doped Ti–CaHap possessed the absorption peaks at 446 and 623 nm in vis range in addition to the UV absorption of charge transfer transition of O^2? → Ti⁴⁺. The vis absorption peaks developed on raising the Cr(III) concentration. The photocatalytic decomposition of acetaldehyde into CO₂ over Cr(III)-doped Ti–CaHap was detected under vis irradiation and the activity was lowered by the formation of Cr(OH)₃-like layer on the particle surface.     

Liquid phase synthesis of ZnO microrods highly oriented on the hexagonal ZnO sheets

We have successfully synthesized zinc oxide microrods perpendicularly oriented on hexagonal ZnO sheets by a simple heat treatment approach using LDH (layered double hydroxide) precursor in an aqueous solution. The synthesized ZnO microrods have an average diameter of 500 nm and length of 2–3 μm, and form highly-oriented array. In this work, the effect of heating temperature and time on morphology and orientation of ZnO microrods was studied experimentally and the formation mechanism was discussed in detail. Transformation from hexagonal precursor to ZnO microrods can be attributed to dissolution and re-precipitation of the precursor, which should be caused by its thermal unstability under heating temperature.     

Nano-strip grating lines self-organized by a high speed scanning CW laser

After a laser annealing experiment on Si wafer, we found an asymmetric sheet resistance on the surface of the wafer. Periodic nano-strip grating lines (nano-SGLs) were self-organized along the trace of one-time scanning of the continuous wave (CW) laser. Depending on laser power, the nano-trench formed with a period ranging from 500 to 800 nm with a flat trough between trench structures. This simple method of combining the scanning laser with high scanning speed of 300 m min(-1) promises a large area of nanostructure fabrication with a high output. As a demonstration of the versatile method, concentric circles were drawn on silicon substrate rotated by a personal computer (PC) cooling fan. Even with such a simple system, the nano-SGL showed iridescence from the concentric circles.     

Defect reduction in electrochemically deposited CdS thin films by annealing in 02

Using the electrochemical deposition method, CdS thin films were deposited from acid solutions (pH = 2.5) containing CdS0₄ and Na₂S₂0₃ on indium-oxide coated glass substrates. These films were annealed in N₂, air, or O₂ atmosphere at 200–500°C for 30 min. Photoluminescence spectra were measured at 77 K. For the films annealed in N₂, the band edge emission became weaker and the luminescence due to defects shifted to longer wavelengths as the annealing temperature was raised above 300°C. However, for the films annealed in air or O₂, the band edge emission was observed strongly irrespective of the annealing temperature and the luminescence due to defects was weak. Thus the O₂ annealing is useful for the defects reduction.     

Effect of CO2 on layered Li1+zNi1−x−yCoxMyO2 (M = Al,Mn) cathode materials for lithium ion batteries

We investigated the effect of CO₂ on layered Li_1+zNi_1−x−yCo_xM_yO₂ (M = Al, Mn) cathode materials for lithium ion batteries which were prepared by solid-state reactions. Li_1+zNi_(1−x)/2Co_xMn_(1−x)/2O₂ (Ni/Mn mole ratio = 1) singularly exhibited high storage stability. On the other hand, Li_1+zNi_0.80Co_0.15Al_0.05O₂ samples were very unstable due to CO₂ absorption. XPS and XRD measurements showed the reduction of Ni³⁺ to Ni²⁺ and the formation of Li₂CO₃ for Li_1+zNi_0.80Co_0.15Al_0.05O₂ samples after CO₂ exposure. SEM images also indicated that the surfaces of CO₂-treated samples were covered with passivation films, which may contain Li₂CO₃. The relationship between CO₂-exposure time and CO₃²⁻ content suggests that there are two steps in the carbonation reactions; the first step occurs with the excess Li components, Li₂O for example, and the second with LiNi_0.80Co_0.15Al_0.05O₂ itself. It is well consistent with the fact that the discharge capacity was not decreased and the capacity retention was improved until the excess lithium is consumed and then fast deterioration occurred.     

Potential of renewable energy sources and its applications in Yakushima Island

A study was carried out to see if the potential of renewable energy sources other than hy droelectric power, such as wind, photovoltaic, solar thermal, biomass and waste energy sources, can meet the current energy consumption in Yakushima. The current electricity consumption can be covered by wind and photovoltaic energy sources. The total potential of wind and photovoltaic energy sources is 5.4 times as much as the current electricity consumption. LP gas and kerosene can be replaced by solar thermal and biogas energy. The potential of plant biomass and municipal waste is not sufficient (approximately one third) to cover the rest of the fossil fuels (gasoline, diesel oil and heavy oil). Also, plant biomass and municipal waste must be converted into fluid form. This shortage can be covered by the po tential of wind and photovoltaic energy sources. We also investigated the possibility of tourism expansion using the potential of wind and photovoltaic energy sources. Taking into account three types of capacity (energy, accommodation and transportation), Yakushima can accept approximately four times as many tourists as the current number of tourists.     

Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate,bottom-contact organic thin-film transistors with Schottky contact

Channel length dependence of field-effect mobility and source/drain parasitic resistance in pentacene thin-film transistors with a bottom-gate, bottom-contact configuration was investigated. Schottky barrier effect such as nonlinear behaviors in transistor output characteristics appeared and became more prominent for shorter channel length less than 10 μm, raising some concerns for a simple utilization of conventional parameter extraction methods. Therefore the gate-voltage-dependent hole mobility and the source/drain parasitic resistance in the pentacene transistors were evaluated with the aid of device simulation accounting for Schottky contact with a thermionic field emission model. The hole mobility in the channel region shows smaller values with shorter channel length even after removing the influence of Schottky barrier, suggesting that some disordered semiconductor layers with low carrier mobility exist near the contact electrode. This experimental data analysis with the simulation enables us to discuss and understand in detail the operation mechanism of bottom-gate, bottom-contact transistors by considering properly each process of charge carrier injection, carrier flow near the contact region, and actual channel transport.     

An EMQ-switched CO2 laser as a pump source for afar-infrared laser with a high peak power and a high repetitionrate

A modified current pulsed Q (EMQ)-switched CO₂ laser which is Q-switched by a mechanical beam chopper in combination with a pulsed discharge current is discussed. The laser produces a very stable output with a peak power greater than 1 kW at a repetition rate of 1000 p.p.s. for all transitions in the P and R branches of the CO₂ spectrum. A CH₃F laser pumped by the EMQ-switched laser produces 496 μm radiation in a 6.5 W peak, 100 ns pulses at 500 p.p.s. in the lowest loss EH₁₁ mode