Rear‐Passivated Ultrathin Cu(In,Ga)Se2 Films by Al2O3 Nanostructures Using Glancing Angle Deposition Toward Photovoltaic Devices with Enhanced Efficiency

In this work, for the first time, the addition of aluminum oxide nanostructures (Al₂O₃ NSs) grown by glancing angle deposition (GLAD) is investigated on an ultrathin Cu(In,Ga)Se₂ device (400 nm) fabricated using a sequential process, i.e., post‐selenization of the metallic precursor layer. The most striking observation to emerge from this study is the alleviation of phase separation after adding the Al₂O₃ NSs with improved Se diffusion into the non‐uniformed metallic precursor due to the surface roughness resulting from the Al₂O₃ NSs. In addition, the raised Na concentration at the rear surface can be attributed to the increased diffusion of Na ion facilitated by Al₂O₃ NSs. The coverage and thickness of the Al₂O₃ NSs significantly affects the cell performance because of an increase in shunt resistance associated with the formation of Na₂Se_X and phase separation. The passivation effect attributed to the Al₂O₃ NSs is well studied using the bias‐EQE measurement and J–V characteristics under dark and illuminated conditions. With the optimization of the Al₂O₃ NSs, the remarkable enhancement in the cell performance occurs, exhibiting a power conversion efficiency increase from 2.83% to 5.33%, demonstrating a promising method for improving ultrathin Cu(In,Ga)Se₂ devices, and providing significant opportunities for further applications.     

Morphological Stabilization by Supramolecular Perfluorophenyl‐C60 Interactions Leading to Efficient and Thermally Stable Organic Photovoltaics

A new PC₆₁BM‐based fullerene, [6,6]‐phenyl‐C₆₁ butyric acid pentafluorophenyl ester (PC₆₁BP^F) is designed and synthesized. This new n‐type material can replace PC₆₁BM to form a P3HT:PC₆₁BP^F binary blend or serve as an additive to form a P3HT:PC₆₁BM:PC₆₁BP^F ternary blend. Supramolecular attraction between the pentafluorophenyl group of PC₆₁BP^F and the C₆₀ cores of PC₆₁BP^F/PC₆₁BM can effectively suppress the PC₆₁BP^F/PC₆₁BM materials from severe aggregation. By doping only 8.3 wt% PC₆₁BP^F, device PC₆₁BP^F651 exhibits a PCE of 3.88% and decreases slightly to 3.68% after heating for 25 h, preserving 95% of its original value. When PC₆₁BP with non‐fluorinated phenyl group is used to substitute PC₆₁BP^F, the stabilizing ability disappears completely. The efficiencies of PC₆₁BP651 and PC₆₁BP321 devices significantly decay to 0.44% and 0.11%, respectively, after 25 h isothermal heating. Most significantly, this strategy is demonstrated to be effective for a blend system incorporating a low band‐gap polymer. By adding only 10 wt% PC₆₁BP^F, the PDTBCDTB: PC₇₁BM‐based device exhibits thermally stable morphology and device characteristics. These findings demonstrate that smart utilization of supramolecular interactions is an effective and practical strategy to control morphological evolution.     

Fluorene‐Based Asymmetric Bipolar Universal Hosts for White Organic Light Emitting Devices

Two new bipolar host molecules composed of hole‐transporting carbazole and electron‐transporting cyano ( CzFCN ) or oxadiazole ( CzFOxa )‐substituted fluorenes are synthesized and characterized. The non‐conjugated connections, via an sp³‐hybridized carbon, effectively block the electronic interactions between electron‐donating and ‐accepting moieties, giving CzFCN and CzFOxa bipolar charge transport features with balanced mobilities (10^?5 to 10^?6 cm² V^?1 s^?1). The meta–meta configuration of the fluorene‐based acceptors allows the bipolar hosts to retain relatively high triplet energies [E_T = 2.70 eV ( CzFOxa ) and 2. 86 eV ( CzFCN )], which are sufficiently high for hosting blue phosphor. Using a common device structure – ITO/PEDOT:PSS/DTAF/TCTA/host:10% dopants (from blue to red)/DPPS/LiF/Al – highly efficient electrophosphorescent devices are successfully achieved. CzFCN ‐based devices demonstrate better performance characteristics, with maximum η_ext of 15.1%, 17.9%, 17.4%, 18%, and 20% for blue (FIrpic), green [(PPy)₂Ir(acac)], yellowish‐green [m‐(Tpm)₂Ir(acac)], yellow [(Bt)₂Ir(acac)], and red [Os(bpftz)₂(PPhMe₂)₂, OS1], respectively. In addition, combining yellowish‐green m‐(Tpm)₂Ir(acac) with a blue emitter (FIrpic) and a red emitter (OS1) within a single emitting layer hosted by bipolar CzFCN , three‐color electrophosphorescent WOLEDs with high efficiencies (17.3%, 33.4 cd A^?1, 30 lm W ^?1), high color stability, and high color‐rendering index (CRI) of 89.7 can also be realized.     

High performance analog VLSI computational circuits

Simple linear voltage/current-controlled voltage-to-current (V-T) converters, which are to first-order insensitive to the threshold voltage variation, are introduced. The circuits can be used as basic building blocks to construct simple analog computational circuits, which can perform functions such as square rooting, squaring, multiplication, sum of squares, difference of squares, etc. Some of the key features are: good linearity, floating inputs [high common-mode rejection ratio (CMRR)], simplicity, and good transconductance tuning range. The circuits can be realized with CMOS devices in saturation, however, BiCMOS devices extend their speed and input voltage range. Realistic simulations and experimental results clearly demonstrate the claims     

Viscous dissipation effect on entropy generation for non-Newtonian fluids in microchannels

An analytical study on the viscous dissipation effect on entropy generation in fully developed forced convection for single phase non-Newtonian fluid flow in circular microchannels is reported. In the first-law analysis, closed form solutions of the temperature distributions in the radial direction for the models with and without viscous dissipation term in the energy equation are obtained. In the second-law analysis, the two models are compared by analyzing their relative deviations in dimensionless entropy generation and Bejan number for different Brinkman number and power-law index. The findings show that under certain conditions the viscous dissipation effect on entropy generation in microchannels is significant and should not be neglected.     

The interfacial reaction between Sn-Zn-Ag-Ga-Al solders and metallized Cu substrates

The interfacial interaction between the Sn-8.55Zn-0.5Ag-0.5Ga-0.1Al solder and three kinds of metallized substrates (Cu, Cu/Au, and Cu/Ni-P/Au) does not form the Cu-Sn intermetallic compound (IMC). Continuous Cu-Zn and discontinuous Ag-Zn interfacial IMC layers formed between the Cu and Sn-Zn-Ag-Ga-Al solder, while Cu-Zn and Au-Al-Zn IMCs formed on the Cu/Au substrate. Only the Au-Al-Zn IMC formed at the interface when the electroless Ni-P deposit was the diffusion barrier between Cu and the Au surface layer.     

Simulations and experiments for optimal deployment of an RFID‐based location‐aware system

The proliferation of communication and mobile computing devices and local‐area wireless networks has cultivated a growing interest in location‐aware systems and services. An essential problem in location‐aware computing is the determination of physical locations. RFID technologies are gaining much attention, as they are attractive solutions to indoor localization in many healthcare applications. In this paper, we propose a new indoor localization methodology that aims to deploying RFID technologies in achieving accurate location‐aware undertakings with real‐time computation. The proposed algorithm introduces means to improve the accuracy of the received RF signals. Optimal settings for the parameters in terms of reader and reference tag properties were investigated through simulations and experiments. The experimental results indicate that our indoor localization methodology is promising in applications that require fast installation, low cost and high accuracy. Copyright © 2009 John Wiley & Sons, Ltd.     

Very low noise RF nMOSFETs on plastic by substrate thinning and wafer transfer

A very low minimum noise figure (NF/sub min/) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-/spl mu/m radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (/spl sim/30 /spl mu/m) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB NF/sub min/ and a 13.7-dB associated gain. The small RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.     

Analysis and optimization of DS-CDMA systems with time-limited partial response chip waveforms

Conventional direct sequence code division multiple access systems (DS-CDMA) using offset quadrature phase shift key (OQPSK) usually employ a strictly bandlimited partial response square-root raised cosine pulse as the chip waveform. They have the disadvantage of large envelope fluctuation that will incur performance degradation due to the intermodulation and bandwidth enlargement caused by post nonlinear processing. To improve the performance of DS-CDMA systems, the chip waveform and receiver should be properly selected. This paper presents a systematic performance analysis of a matched filter receiver and zero-forcing filter (ZF) receiver for DS-CDMA using a time-limited partial response chip waveform. Nevertheless the systematic performance analysis is applicable to bandlimited chip pulse as well. For the zero-forcing filters, we propose to select the frequency responses that satisfy the first Nyquist criterion. With this class of filters, we can choose the roll-off factor to minimize the total power of multiple access interference and noise power. The zero-forcing filter with proper choice of roll-off factor, referred to as optimum ZF, yields a performance better than the matched filter counterpart. The bit error rate (BER) performance of the optimum ZF with superposed quadrature amplitude modulation signal as the time pulse waveform is evaluated. It is shown that the optimum ZF provides better BER performance than conventional OQPSK and minimum shift keying, and its envelope uniformity is much better than that of OQPSK.     

Solder joint reliability of TFBGA assemblies with fresh and reworked solder balls

In this article, the solder joint reliability of thin and fine-pitch BGA (TFBGA) with fresh and reworked solder balls is investigated. Both package and board level reliability tests are conducted to compare the solder joint performance of test vehicle with fresh and reworked solder balls. For package level reliability test, ball shear test is performed to evaluate the joint strength of fresh and reworked solder balls. The results show that solder balls with rework process exhibit higher shear strength than the ones without any rework process. The results also exhibit that the different intermetallic compound (IMC) formation at solder joints of fresh and reworked solder balls is the key to degradation of shear strength. For board level reliability tests, temperature cycling and bending cyclic tests are both applied to investigate the fatigue life of solder joint with fresh and reworked solder balls. It is observed that package with reworked solder ball has better fatigue life than the one with fresh solder ball after temperature cyclic test. As for bending cyclic test, in addition to test on as-assembled packages, reworked and fresh samples are subjected to heat treatment at 150 °C for 100 h prior to the bending cyclic test. The purpose is to let Au–Ni–Sn IMC resettle at solder joints of fresh solder ball and examine the influence of Au–Ni–Sn IMC on the fatigue life of solder joints (Au embrittlement effect). The final results confirm that reworked solder balls have better reliability performance than fresh one since Au embrittlement dose exist at fresh solder ball.