Phase-separated polydimethylsiloxane as a dielectric surface treatment layer for organic field effect transistors

We suggest a novel method for treating the surfaces of dielectric layers in organic field effect transistors (OFETs). In this method, a blend of poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and dimethylsiloxane (DMS) with a curing agent is spin coated onto the surface of a dielectric substrate, silicon oxide (SiO₂), and then thermally cured. X-ray photoelectron spectroscopy, contact angle measurements, and morphology analysis were used to show that the hydrophilic DMS layer is preferentially adsorbed on the SiO₂ substrate during the spin coating process. After thermal curing, the bottom DMS layer becomes a hydrophobic PDMS layer. This bottom PDMS layer becomes thinner during curing due to the upward motion of the hydrophobic PDMS molecules. The FET mobility of the cured system was 10^?2 cm²/Vs, which is similar to that of polymeric semiconductors on octadecyltrichlorosilane treated SiO₂ dielectric layers. We also discuss the possibility of using this blend method to increase the air-stability of polymeric semiconductors.     

Realization of 2-D Variable IIR Digital Filter Structures with a Small Amount of Calculations for Coefficient Update

This paper proposes 2-D variable IIR digital filter structures with a small amount of calculations for coefficient update. The proposed realization method uses the 2-D parallel allpass structure derived from the separable denominator 2-D filter as the prototype structure for 2-D variable digital filters. In order to reduce the amount of calculations, all the redundant first-order complex allpass sections are combined by modularization of the variable structure. Furthermore, we can realize a very compact variable structure with a minimal number of first-order complex allpass sections by combining complex allpass sections with their complex conjugate allpass sections. Comparison of the calculation loads of the variable structures is presented to demonstrate that the amount of calculations for coefficient update of the proposed variable structure is far less than that of the original and the modular variable structure.     

Chiroptical‐Conjugated Polymer/Chiral Small Molecule Hybrid Thin Films for Circularly Polarized Light‐Detecting Heterojunction Devices

Herein, a simple and facile strategy is described to obtain chiroptically active semiconductor thin films by blending of poly(3‐alkylthiophene)s, which are conventional achiral polymer semiconductors, and 1,1′‐binaphthyl (BN), a versatile chiral molecule. As expected, the intermolecular interaction between the two materials is important to extend the chirality of the binaphthyl molecules to the hybrid films. The controlled phase separation and crystallization of poly[3‐(6‐carboxyhexyl)thiophene‐2,5‐diyl] (P3CT) and binaphthyl hybrid films result in unique heterojunction bilayer thin‐film structures that consisted of BN microcrystals at the top and a P3CT/BN mixed layer at the bottom. Such heterojunction bilayer films exhibit significantly amplified chiroptical response with weak broadened tails, which is due to the enhanced crystallization of the chiral BN molecules and formation of heteroaggregates in the hybrid films. Based on the characterization of crystalline structure and photoluminescence analysis, it is found that new electronic energy states are formed in the conduction band region of P3CTs in the P3CT/BN heteroaggregates, which contribute to chirality transfer from BN to the hybrid films. As a proof of concept, a photodiode capable of distinguishably sensing the left‐ and right‐handed circularly polarized light is successfully fabricated by using the hybrid films with the heterojunction bilayer structure.     

Spectrum‐Based Color Reproduction Algorithm for Makeup Simulation of 3D Facial Avatar

Various simulation applications for hair, clothing, and makeup of a 3D avatar can provide more useful information to users before they select a hairstyle, clothes, or cosmetics. To enhance their reality, the shapes, textures, and colors of the avatars should be similar to those found in the real world. For a more realistic 3D avatar color reproduction, this paper proposes a spectrum‐based color reproduction algorithm and color management process with respect to the implementation of the algorithm. First, a makeup color reproduction model is estimated by analyzing the measured spectral reflectance of the skin samples before and after applying the makeup. To implement the model for a makeup simulation system, the color management process controls all color information of the 3D facial avatar during the 3D scanning, modeling, and rendering stages. During 3D scanning with a multicamera system, spectrum‐based camera calibration and characterization are performed to estimate the spectrum data. During the virtual makeup process, the spectrum data of the 3D facial avatar is modified based on the makeup color reproduction model. Finally, during 3D rendering, the estimated spectrum is converted into RGB data through gamut mapping and display characterization.     

Forward-stepwise regression analysis for fine leak batch testing of wafer-level hermetic MEMS packages

An advanced regression scheme is proposed to analyze fine leak batch testing data of multiple MEMS packages. The scheme employs the forward-stepwise regression method to infer the information of leaky packages from a batch test data. The analysis predicts the number of leaky packages and the true leak rate of each leaky package in a progressive manner. The scheme is implemented successfully using an actual batch test data obtained from wafer-level hermetic MEMS packages. An error analysis is followed to define the applicable domain of the scheme. Advanced formulations are also suggested to extend the applicable domain.     

Effect of plasma process-induced damage on bias temperature instability of MOSFETs

For a surface-channel n-MOSFET and a buried-channel p-MOSFET, the effect of plasma process-induced damage on bias temperature instability (BTI) was investigated. The gate oxide thickness, t_ox, of the test MOSFETs was 2.0, 3.0, or 4.5 nm. The shifts of threshold voltage V_th and of linear drain current I_dlin were measured after applying a BTI stress at a temperature of 125 °C. The measured shifts of V_th and I_dlin indicate that BTI on ultra-thin gate CMOS devices appears only in the form of SiO₂/Si interface degradation, and that the positive BTI for the n-MOSFET as well as the negative BTI for the p-MOSFET is important for the reliability evaluation of CMOS devices. Because of positive plasma charging to the gate, a protection diode was very efficient at reducing BTI for the p-MOSFET, but it was much less effective for the n-MOSFET.     

A novel hidden station detection mechanism in IEEE 802.11 WLAN

The popular IEEE 802.11 wireless local area network (WLAN) is based on a carrier sense multiple access with collision avoidance (CSMA/CA), where a station listens to the medium before transmission in order to avoid collision. If there exist stations which can not hear each other, i.e., hidden stations, the potential collision probability increases, thus dramatically degrading the network throughput. The RTS/CTS (request-to-send/clear-to-send) frame exchange is a solution for the hidden station problem, but the RTS/CTS exchange itself consumes the network resources by transmitting the control frames. In order to maximize the network throughput, we need to use the RTS/CTS exchange adaptively only when hidden stations exist in the network. In this letter, a simple but very effective hidden station detection mechanism is proposed. Once a station detects the hidden stations via the proposed detection mechanism, it can trigger the usage of the RTS/CTS exchange. The simulation results demonstrate that the proposed mechanism can provide the maximum system throughput performance.     

Aptamer‐Functionalized Multidimensional Conducting‐Polymer Nanoparticles for an Ultrasensitive and Selective Field‐Effect‐Transistor Endocrine‐Disruptor Sensors

An endocrine disruptor (ED) is a type of xenobiotic compound that can cause serious diseases related to the estrous cycle, as well as various types of cancer. At low ED concentrations, estrogen receptors may respond as they would under physiological conditions. In this work, aptamer‐functionalized multidimensional conducting‐polymer (3‐carboxylate polypyrrole) nanoparticles (A_M_CPPyNPs) are fabricated for use in an FET sensor to detect bisphenol A (BPA). The multidimensional system, M_CPPyNPs, is first produced by means of dual‐nozzle electrospray of pristine CPPyNPs and vapor deposition polymerization of additional conducting polymer. The M_CPPyNPs are then immobilized on an amine‐functionalized (–NH₂) interdigitated‐array electrode substrate, through the formation of covalent bonds with amide groups (–CONH). The amine‐functionalized BPA‐binding aptamer is then introduced in the same way as that for M_CPPyNP immobilization. The resulting A_M_CPPyNP‐based FET sensors exhibit ultrasensitivity and selectivity towards BPA at unprecedentedly low concentrations (1 fm ) and among molecules with similar structures. Additionally, due to the covalent bonding involved in the immobilization processes, a longer lifetime is expected for the FET sensor.     

Study on Characteristics of Various RF Transmission Line Structures on PES Substrate for Application to Flexible MMIC

In this work, the coplanar waveguide is fabricated on a PES (poly[ether sulfone]) substrate for application to a flexible monolithic microwave integrated circuit, and its RF characteristics were thoroughly investigated. The quality factor of the coplanar waveguide on PES is 40.3 at a resonance frequency of 46.7 GHz. A fishbone‐type transmission line (FTTL) structure is also fabricated on the PES substrate, and its RF characteristics are investigated. The wavelength of the FTTL on PES is 5.11 mm at 20 GHz, which is 55% of the conventional coplanar waveguide on PES. Using the FTTL, an impedance transformer is fabricated on PES. The size of the impedance transformer is 0.318 mm × 0.318 mm, which is 69.2% of the size of the transformer fabricated by the conventional coplanar waveguide on PES. The impedance transformer showed return loss values better than –12.9 dB from 5 GHz to 50 GHz and an insertion loss better than –1.13 dB in the same frequency range.