全文获取类型
收费全文 | 385089篇 |
免费 | 29575篇 |
国内免费 | 9385篇 |
专业分类
电工技术 | 22452篇 |
技术理论 | 40篇 |
综合类 | 22056篇 |
化学工业 | 67710篇 |
金属工艺 | 19760篇 |
机械仪表 | 22636篇 |
建筑科学 | 27099篇 |
矿业工程 | 10566篇 |
能源动力 | 10779篇 |
轻工业 | 28985篇 |
水利工程 | 6348篇 |
石油天然气 | 20613篇 |
武器工业 | 2692篇 |
无线电 | 45260篇 |
一般工业技术 | 49361篇 |
冶金工业 | 16570篇 |
原子能技术 | 3954篇 |
自动化技术 | 47168篇 |
出版年
2025年 | 1104篇 |
2024年 | 7754篇 |
2023年 | 7063篇 |
2022年 | 10238篇 |
2021年 | 14355篇 |
2020年 | 13894篇 |
2019年 | 13695篇 |
2018年 | 12458篇 |
2017年 | 13962篇 |
2016年 | 13971篇 |
2015年 | 17064篇 |
2014年 | 20214篇 |
2013年 | 23760篇 |
2012年 | 23499篇 |
2011年 | 24723篇 |
2010年 | 22284篇 |
2009年 | 21114篇 |
2008年 | 20380篇 |
2007年 | 19206篇 |
2006年 | 19059篇 |
2005年 | 16151篇 |
2004年 | 11508篇 |
2003年 | 9851篇 |
2002年 | 9259篇 |
2001年 | 8176篇 |
2000年 | 8183篇 |
1999年 | 8092篇 |
1998年 | 6249篇 |
1997年 | 5126篇 |
1996年 | 4728篇 |
1995年 | 3934篇 |
1994年 | 3150篇 |
1993年 | 2225篇 |
1992年 | 1783篇 |
1991年 | 1392篇 |
1990年 | 1062篇 |
1989年 | 871篇 |
1988年 | 610篇 |
1987年 | 404篇 |
1986年 | 317篇 |
1985年 | 232篇 |
1984年 | 172篇 |
1983年 | 130篇 |
1982年 | 155篇 |
1981年 | 120篇 |
1980年 | 105篇 |
1979年 | 44篇 |
1978年 | 27篇 |
1976年 | 36篇 |
1953年 | 26篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
71.
刘品意 《消防技术与产品信息》2005,(2):12-14
通过对西部某小城市的住宅消防设施建设和管理现状的调查 ,反映了占西部绝大部分城市面积的中小城镇的住宅消防设施十分令人担忧的现状 ,分析了造成这一现状的原因 ,提出了解决这一问题的建设管理思路 相似文献
72.
观赏草在庭园中的设计与应用 总被引:2,自引:0,他引:2
观赏草以其灵动的景观特质,草类特有的自然色调,飘逸的质感越来越受到设计师们的青睐,用于焦点、绿蒿、花镜、镶边均有不凡的表现,虽为草类,却有着灌木的功能。 相似文献
73.
74.
锝化学研究 Ⅸ.脑显像剂Tc~(Ⅴ)ON_2S_2类配合物结构稳定性和价态的研究 总被引:1,自引:0,他引:1
采用改进的CNDO/2法模拟了BAT类脑显像剂Tc(Ⅴ)O配合物价态的转换过程,发现N2S2类配体与Tc(Ⅴ)O核配位时,可能存在配位平衡离子X。在溶液中由于X离子的优先解络,瞬间存在+1价对称性99Tcm配合物,并且,它又自动向相对稳定的0价不对称性99Tcm配合物转换,在动态转换过程中,将导致仅有一个配位N原子保留一个质子,这与实验结果一致。采用键级削弱百分数概念,表征配位过程的二个配位N原子上保留程度,解释了Tc(Ⅴ)O核、Tc(Ⅴ)≡N核N2S2类配合物两个N-H键上质子保留程度不同的原因,为今后设计不同价态锝配合物结构提供理论依据。 相似文献
75.
The Testbed for Distributed Processing, or Ted, consists of Intel Corp.'s iSBC 8086 single board computers (SBCs) organized into groups or clusters. Each cluster consists of several SBCs that communicate via a shared memory. Intercluster communication occurs through an Ethernet interface. A hardware monitor designed and implemented to handle the monitoring activities within a cluster in the Ted system is described. By using specified patterns and don't-care masks, the system can detect accesses to selected data, addresses, or blocks of addresses. This function helps monitor events such as the access or usage of a memory location or a group of mailbox addresses. It also determines the amount of time consumed by the performance of specific operations 相似文献
76.
A pilot-scale fluidised pellet bed (FPB) bioreactor, which combines chemical coagulation, biological degradation, particle pelletisation and separation in one unit, was applied for onsite wastewater treatment and reuse. As a result of rational use of inorganic coagulant and organic polymer and moderate mechanical agitation, spherical particles were generated in the upflow column and a well-fluidised bed was formed. With a continuous supply of dissolved oxygen through a recycling loop, an aerobic condition was kept in the bottom section of the FPB column. Under such conditions the pellets in the FPB column showed the following characteristics: (1) compact structure and high density; (2) rich in microorganisms; and (3) high MLSS and MLVSS concentrations. Therefore, the FPB bioreactor achieved more than 90% removal of SS, COD, BOD and TP from raw domestic wastewater within a total hydraulic retention time (HRT) of only about 30 minutes. It also showed nitrification and denitrification ability and the TN removal could be about 50% as the recycling ratio was increased to 1:1. The treated water quality is generally competitive with the secondary effluent from a conventional activated sludge process. With these advantages the FPB bioreactor is recommendable as a compact system for onsite wastewater treatment and reuse. 相似文献
77.
文章结合平常工作经验,对低水头电站规划设计中需要注意的包括坝(闸)址选择,库区淹(浸)没、枢纽布置、施工导流、正常蓄水位与上下游梯级衔接五个问题加以分析探讨,进行总结和思考。 相似文献
78.
Shealy J.B. Hashemi M.M. Kiziloglu K. DenBaars S.P. Mishra U.K. Liu T.K. Brown J.J. Lui M. 《Electron Device Letters, IEEE》1993,14(12):545-547
A technology for increasing both the two-terminal gate-drain breakdown and subsequently the three-terminal-off-state breakdown of AlInAs/GaInAs high-electron-mobility transistors (HEMTs) to record values without substantial impact on other parameters is presented. The breakdown in these structures is dependent on the multiplication of electrons injected from the source (channel current) and the gate (gate leakage) into the channel. In addition, holes are generated by high fields at the drain and are injected back into the gate and source electrodes. These phenomena can be suppressed by increasing the gate barrier height and alleviating the fields at the drain. Both have been achieved by incorporating a p+-2DEG junction as the gate that modulates the 2DEG gas and by utilizing selective regrowth of the source and drain regions by MOCVD. The 1-μm-gate-length devices fabricated have two-terminal gate-drain and three-terminal-off-state breakdown voltages of 31 V and 28 V, respectively 相似文献
79.
本文介绍了可编程增益放大器设计的方法。它主要由控制电路、放大电路、显示电路三大模块组成。该系统性能好、成本低、工作可靠,具有一定的工程应用价值,经测试表明,该设计基本上达到了设计的要求。 相似文献
80.
K. -H. Song H. K. Liu S. X. Dou C. C. Sorrell N. Savvides G. J. Bowden 《Journal of Materials Science: Materials in Electronics》1990,1(1):30-33
Silver/superconductor composites containing 0 to 80 vol% silver have been prepared and their properties determined. Optimum heat treatment at sintering temperatures ( 800° C) under low oxygen pressures produces material with high critical current density and improves physical properties. Magnetic susceptibility measurements have been found to be consistent with resistivity results. In order to retain a single high-T
c phase with increasing silver content, decreased oxygen partial pressures are required. Using the normal-state resistivity of these composites, a percolation threshold at a silver volume fraction of 43% was observed, while zero resistivity measurements show that a continuous superconducting network can be obtained with up to 80 vol% silver. The critical current density of 21 vol% silver-doped samples was found to be 1520 A cm–2 at 77.3 K, compared to 260 A cm–2 for an undoped sample. 相似文献