Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.     

Effects of surfactant/silica and silica/cerium ratios on the characteristics of mesoporous Ce-MCM-41

Using the surfactant CTMABr (cetyltrimethyl ammonium bromide) and cerium(IV) sulfate, mesoporous Ce-MCM-41 molecular sieves were produced under a hydrothermal condition with various surfactant/silica (surfactant/Si) and silica/cerium (Si/Ce) ratios. Changes to the structural traits caused by changing the molar ratios of both surfactant/Si and Si/Ce were investigated. XRD (X-ray diffraction), FT-IR (fourier transform infrared spectroscopy), and SEM (scanning electro microscopy) were used for the characterization of prepared mesoporous samples. Among the tested molar ratios, surfactant/Si ratio of 0.5 and 0.2 showed highest values of d_1 0 0 and intensity, respectively, for the Si-MCM-41. XRD analysis also identified a quintessential hexagonal structure of Ce-MCM-41 for the Si/Ce molar ratio higher than 40 (maintaining the surfactant/Si ratio at 0.2). When cerium content was increased to have the Si/Ce molar ratio of 20, the hexagonal structure of Ce-MCM-41 was collapsed due to the structural stress of substituted cerium. FT-IR results confirmed calcination of Ce-MCM-41 and the incorporation of Ce⁴⁺ ions of cerium sulfate into the silica surface with proper removal of the surfactant. Rod-like shape with rounded edges of the prepared Ce-MCM-41 samples was identified by SEM. These results suggest surfactant/Si ratio of 0.2 and Si/Ce ratio of 40 for the production of Ce-MCM-41 with the highest level of crystallinity.     

交流，共享，流动——现代大空间办公模式的优劣与对策

讨论了现代办公空间设计出现的新要求,通过办公空间演变趋势的探讨,归纳为若干大空间办公模式,并分析、比较其空间性质及特点,以及采用开放式办公布局的优势、不足及解决对策.     

提高开卷线纵剪机精度的研究

通过对纵剪机右立柱轴承间隙测量方法和左立柱导向结构的改进，保证了加工精度，易于操作，提高了生产效率。     

汽车漆漆膜质量的改进与提高

通过对车身漆膜质量问题的分析,采取专业清洁公司整体承包车间保洁、工艺方面改进、更换生产外材料、供应商加强对汽车漆使用的监控等一系列措施,漆膜质量水平得以提高.     

从关联分析法看如何改善沥青抗老化性能

用灰色关联分析法研究了沥青抗老化性能与沥青化学组成之间的关联程度，结果表明，影响再生沥青性质的主要因素是沥青中的芳烃和胶质的含量。通过添加芳香组分能改善沥青四组分之间的配伍性，从而可以改善再生沥青的抗老化性能。并通过对再生剂进行富芳处理，验证了上述结论。     

镍氢电池负极用低成本储氢合金的研究

研究了ABS型储氢合金在低Co含量条件下，随B组元替代元素Co，Al，Si等含量的变化对合金电化学性能的影响规律，同时研究了A组元中不同La／Ce比对合金电化学性能的影响情况。结果表明，随合金中Co含量的降低，合金的活化性能和放电容量得以改善，但合金的循环寿命下降也比较明显；在试验范围内，随Al元素的加入，合金的循环寿命得以改善，但材料的放电容量和活化性能均有所下降；随合金La／Ce比的降低，合金的放电容量略有下降，但其循环寿命和放电电压平台有较大提高。