准噶尔盆地加快天然气勘探有利条件及预探领域分析

准噶尔盆地天然气资源十分丰富,勘探潜力巨大。该盆地具备形成大气区的地质背景,发育石炭系、二叠系、侏罗系三套气源岩,演化程度高,气源条件充足;发育多类型、多套储集体和四套区域盖层,形成了有利的储盖组合及成藏配置。通过对五彩湾、滴西、莫索湾、莫北地区典型气藏的分析研究,该盆地发育多种气藏类型,包括构造型、古潜山型、火山岩内幕型及地层(不整合遮挡)型。通过研究指出,天然气勘探的现实领域有陆东—五彩湾地区、陆西—莫北—莫索湾地区;待突破的领域有腹部下组合大型古隆起及岩性气藏、南缘冲断带;正在准备的勘探领域主要为煤层气。     

Application of asymptotic waveform evaluation to eigenmode expansion method for analysis of simultaneous switching noise in printed circuit boards (PCBs)

In this paper, the asymptotic waveform evaluation (AWE) technique is first applied to the conventional eigenmode expansion method for characterizing a power/ground (P/G) plane pair and analyzing the simultaneous switching noise on such plane pairs for printed circuit boards or multichip modules. The application of AWE avoids a large number of iterations in computing the impedance frequency response of a P/G plane pair structure and greatly reduces the computation time. Meanwhile, to obtain an accurate solution in an entire frequency range, we employ the complex frequency hopping technique which can help select multiple expansion points. In addition, the proposed approach can also be used to characterize the P/G plane pair structures with irregular shapes. Three examples demonstrate its high efficiency and good accuracy.     

真丝绸产品的清洁生产与生态设计

通过对真丝绸整个产品生命过程的分析，对其进行了生命周期评价，说明了丝绸与其产地环境之间的联系和影响，尝试寻求两者之间的和谐关系，提出了清洁生产工艺的规划和各种行之有效的对策和措施，尝试了对环境友好的丝绸印染工艺的生态设计。     

宣汉——达县地区飞仙关组储层预测方法研究

在宣汉-达县地区,以往仅依据地震属性来预测飞仙关组储层分布,钻探结果与实际情况不符,为此本文提出量化分析预测结合主参数分析的新方法和新思路。在量化分析中首先对飞仙关组储层进行高分辨率反演,获得储能系数图;然后结合主振幅剖面和主频率剖面分析,对储层进行预测。在研究区,本方法的预测结果与实钻情况相吻合。     

乙苯/苯乙烯塔分离效率问题的技术分析及整改措施

分析了齐鲁分公司200kt/a乙苯/苯乙烯装置乙苯/苯乙烯塔(T-401)分离效率低的原因,即降液管设计偏小,液体在降液管内流速过快,引起液体飞溅;安装分布器使用的石棉垫片溶胀而粉碎后堵塞了分布槽;分布器上使用的垫片脱落形成缝隙而漏液;填料装得不密实,留有缝隙;二级分布槽变形等.针对存在问题提出了相应的整改措施,并考察了整改措施实施效果.结果表明,整改后该塔的分离能力满足了工艺要求,并有一定的操作弹性.     

α-Fe_2O_3(SO_4~(2-),Sn)气敏电阻的温度响应特性

在气敏温度区域内研究了α-Fe_2O_3(SO_4~(2-),Sn)材料的电阻-温度特性,认为表面结构的变化导致温度特性出现峰值并呈现气敏性。可利用空气中电阻温度特性提供的信息改性或发现新的气敏材料。     

Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates

The use of conventional and patterned sapphire substrates (PSSs) to fabricate InGaN-based near-ultraviolet (410 nm) light-emitting diodes (LEDs) was demonstrated. The PSS was prepared using a periodic hole pattern (diameter: 3 /spl mu/m; spacing: 3 /spl mu/m) on the (0001) sapphire with different etching depths. From transmission-electron-microscopy and etch-pit-density studies, the PSS with an optimum pattern depth (D/sub h/=1.5 /spl mu/m) was confirmed to be an efficient way to reduce the thread dislocations in the GaN microstructure. It was found that the output power increased from 8.6 to 10.4 mW, corresponding to about 29% increases in the external quantum efficiency. However, the internal quantum efficiency (@ 20 mA) was about 36% and 38% for the conventional and PSS LEDs, respectively. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the PSS. Finally, better long-time reliability of the PSS LED performance was observed.