Highly Stable Graphene‐Based Multilayer Films Immobilized via Covalent Bonds and Their Applications in Organic Field‐Effect Transistors

Highly stable graphene oxide (GO)‐based multilayered ultrathin films can be covalently immobilized on solid supports through a covalent‐based method. It is demonstrated that when (3‐aminopropyl) trimethoxysilane (APTMS), which works as a covalent cross‐linking agent, and GO nanosheets are assembled in an layer‐by‐layer (LBL) manner, GO nanosheets can be covalently grafted on the solid substrate successfully to produce uniform multilayered (APTMS/GO)N films over large‐area surfaces. Compared with conventional noncovalent LBL films constructed by electrostatic interactions, those assembled using this covalent‐based method display much higher stability and reproducibility. Upon thermal annealing‐induced reduction of the covalent (APTMS/GO)N films, the obtained reduced GO (RGO) films, (APTMS/RGO)N, preserve their basic structural characteristics. It is also shown that the as‐prepared covalent (APTMS/RGO)N multilayer films can be used as highly stable source/drain electrodes in organic field‐effect transistors (OFETs). When the number of bilayers of the (APTMS/RGO)N film exceeds 2 (ca. 2.7 nm), the OFETs based on (APTMS/RGO)N electrodes display much better electrical performance than devices based on 40 nm Au electrodes. The covalent protocol proposed may open up new opportunities for the construction of graphene‐based ultrathin films with excellent stability and reproducibility, which are desired for practical applications that require withstanding of multistep post‐production processes.     

Single‐Crystalline p‐Type Zn3As2 Nanowires for Field‐Effect Transistors and Visible‐Light Photodetectors on Rigid and Flexible Substrates

Zn₃As₂ is an important p‐type semiconductor with the merit of high effective mobility. The synthesis of single‐crystalline Zn₃As₂ nanowires (NWs) via a simple chemical vapor deposition method is reported. High‐performance single Zn₃As₂ NW field‐effect transistors (FETs) on rigid SiO₂/Si substrates and visible‐light photodetectors on rigid and flexible substrates are fabricated and studied. As‐fabricated single‐NW FETs exhibit typical p‐type transistor characteristics with the features of high mobility (305.5 cm² V^?1 s^?1) and a high I_on/I_off ratio (10⁵). Single‐NW photodetectors on SiO₂/Si substrate show good sensitivity to visible light. Using the contact printing process, large‐scale ordered Zn₃As₂ NW arrays are successfully assembled on SiO₂/Si substrate to prepare NW thin‐film transistors and photodetectors. The NW‐array photodetectors on rigid SiO₂/Si substrate and flexible PET substrate exhibit enhanced optoelectronic performance compared with the single‐NW devices. The results reveal that the p‐type Zn₃As₂ NWs have important applications in future electronic and optoelectronic devices.     

CPR1000核电项目DCS与第三方系统通讯故障诊断及优化

本文结合在某在建CPR1000核电项目的实际通讯调试中遇到的通讯故障解决处理经验,分析讨论了DCS与RGL系统通讯故障的相关情况、诊断方法、数据分析及优化方案。本文可作为CPR1000后续项目的DCS与第三方通讯配置、调试、诊断和排除通讯故障的参考。     

An ant colony optimisation algorithm for aggregated multicast based on minimum grouping model

The tree‐based delivery structure of the traditional Internet protocol multicast requires each on‐tree router to maintain a forwarding state for a group. This leads to a state scalability problem when large numbers of concurrent groups exist in a network. To address this state scalability problem, a novel scheme called aggregated multicast has recently been proposed, in which multiple groups are forced to share one delivery tree. In this paper, we define the aggregated multicast problem based on the minimum grouping model, and propose an ant colony optimisation algorithm. The relative fullness of the tree is defined according to the characteristics of the minimum grouping problem and is introduced as an important component in identifying the aggregation fitness function between two multicast groups. New pheromone update rules are designed based on the aggregation fitness function. To improve the convergence time of the algorithm, we use the changes (brought by each group) in the relative fullness of the current tree as the selection heuristic information. The impact of the relative fullness of the tree is analysed using the hypothesis test, and simulation results indicate that introducing relative fullness to the fitness function can significantly improve the optimisation performance of the algorithm. Compared with other heuristic algorithms, our algorithm has better optimisation performance and is more suitable for scenarios with larger bandwidth waste rates. Copyright © 2011 John Wiley & Sons, Ltd.     

银纳米立方体对诺丹明分子的荧光增强或猝灭效应实验研究

用乙二醇还原硝酸银,成功制备了平均边长约97 nm的银纳米立方体以用于诺丹明(RhB)分子的荧光实验。实验中,将探针分子 RhB 粉末掺杂于PMMA苯甲醚溶液中,制得不同厚度参杂有RhB探针分子的PMMA薄膜,运用光谱技术和共焦显微技术研究了银纳米立方体与荧光分子的间隔、银纳米立方体不同浓度分布对RhB分子的荧光强度的影响。荧光光谱表明,荧光强度随PMMA厚度变薄而增强,当PMMA厚度为10nm时,荧光增强因子最大,获得了56倍的荧光增强效果,而继续减小PMMA厚度时,其荧光增强因子又变小,说明发生了荧光猝灭效应。共焦荧光像则更直观地表现了银纳米立方体的浓度分布对荧光分子辐射增强的影响。因而,可通过调控银纳米立方体与荧光分子的距离及银纳米立方体的分布优化荧光增强因子以用于基于荧光的单分子探测,这一实验结果在生物成像和生物传感领域有潜在应用价值。     

Organic thin-film field-effect transistors with MoO3/Al electrode and OTS/SiO2 bilayer gate insulator

An organic thin-film transistor (OTFTs) having OTS/SiO₂ bilayer gate insulator and MoO₃/Al electrode configuration between gate insulator and source–drain (S–D) electrodes has been investigated. Thermally grown SiO₂ layer is used as the OTFT gate dielectric and copper phthalocyanine (CuPc) for an active layer. We have found that using silane coupling agents, octadecyltrichlorosilane (OTS) on SiO₂, surface energy of SiO₂ gate dielectric is reduced; consequently, the device performance has been improved significantly. This OTS/SiO₂ bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage and improves the on/off ratios simultaneously. The device with MoO₃/Al electrode has similar source–drain current (I_DS) compared to the device with Au electrode at same gate voltage. Our results indicate that using double-layer of insulator and modified electrode is an effective way to improve OTFT performance.     

PLD法合成MgxZn1-xO纳米柱阵列

使用脉冲激光沉积法(PLD)在Si(100)衬底上无催化生长出了MgxZn1-xO纳米柱阵列.扫描电镜结果发现:在较大的范围内,直径为30～50nm、长度约为60nm均匀分布的纳米柱阵列生长在一层厚度约为70nm的纳米晶薄膜上.XRD结果中的(002)峰和PL谱中的带边发射峰相对于纯ZnO薄膜都发生了不同程度的偏移,表明了Mg组分的掺入改变了ZnO的晶格常数和带隙宽度.分析了MgxZn1-xO纳米柱的生长机制.     

掺Sn的In2O3透明导电膜生长优先取向对其光电性能的影响

采用反应热蒸发法制备掺Sn的In2O3(ITO)透明导电膜,系统研究了ITO薄膜生长的优先取向对其光电性能的影响.结果表明,ITO薄膜(400)取向的优先生长对其透过率影响很小,但可明显增加载流子迁移率,从而有效降低了薄膜的方块电阻.在两个相同的薄膜硅/单晶硅太阳能电池上分别沉积(222)和(400)ITO优先取向膜,光电转换效率分别为10.3%和12.9%,表明(400)取向更有利于提高电池效率.经优化,最佳衬底温度(Ts)为225℃,最佳氧流量(fO2)为4sccm.在优化的沉积条件下制备ITO薄膜,其电阻率可达到4.8×10-4Ω·cm,可见波段的透过率大于90%,性能指数为3.8×10-2□/Ω.     

An image morphing technique based on optimal mass preserving mapping.

Image morphing, or image interpolation in the time domain, deals with the metamorphosis of one image into another. In this paper, a new class of image morphing algorithms is proposed based on the theory of optimal mass transport. The L(2) mass moving energy functional is modified by adding an intensity penalizing term, in order to reduce the undesired double exposure effect. It is an intensity-based approach and, thus, is parameter free. The optimal warping function is computed using an iterative gradient descent approach. This proposed morphing method is also extended to doubly connected domains using a harmonic parameterization technique, along with finite-element methods.     

Unlocking the Capacity of Vanadium Oxide by Atomically Thin Graphene-Analogous V2O5·nH2O in Aqueous Zinc-Ion Batteries

Aqueous Zn-ion batteries (AZIBs) are promising due to their high theoretical energy density and intrinsic safety, and the natural abundance of Zn. Since low voltage is an intrinsic shortage of AZIBs, achieving super-high capacity of cathode materials is a vital way to realize high practical energy density, which however remains a huge challenge. Herein, the capacity increase of classical vanadium oxide cathode is predicted via designing atomic thickness of 2D structure to introduce abundant Zn²⁺ storage sites based on density functional theory (DFT) calculation; then graphene-analogous V₂O₅·nH₂O (GAVOH) with only few atomic layers is fabricated, realizing a record capacity of 714 mAh g⁻¹. Pseudocapacitive effect is unveiled to mainly contribute to the super-high capacity due to the highly exposed GAVOH external surface. In situ Raman and synchrotron X-ray techniques unambiguously uncover the Zn²⁺ storage mechanism. Carbon nanotubes (CNTs) are further introduced to design GAVOH-CNTs gel ink for large-scale cathode fabrication. The hybrid cathode demonstrates ultra-stable cycling and excellent rate capability and delivers a high energy density of 476 Wh kg⁻¹ at 76 W kg⁻¹; 228 Wh kg⁻¹ is still retained at high mass loading of 10.2 mg cm⁻². This work provides inspiration for breaking the capacity limit of cathode in AZIBs.