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991.
SRTM数据具有统一的基准和精度以及可计算性等特点,应用于重力勘探项目的投标报价、工期预测、工区踏勘、设计编写、生产安排、人员调度及风险评估等方面,能提高生产效率和节约成本。本文对具体实测的SRTM数据进行了对比和分析,并结合OziExplorer和GlobalMapper网络公开软件,介绍了该数据在实际生产中的应用。 相似文献
992.
从PMMA型LTCC素坯膜的制备和PMMA的排胶机理两方面,研究了LTCC基板Cu共烧金属化。结果表明,采用PMMA作为粘结剂的流延浆料具有剪切变稀行为,所得的流延坯膜微观组织均匀,叠压后坯体内部无分层现象。热失重、差热和傅立叶红外光谱联用分析结果表明高纯N2气氛中PMMA以解聚机理热解,热解后释放的主要产物为丙烯酸甲酯。在高纯N2气氛中LTCC与Cu共烧后Cu金属化膜平整、致密,连通良好。经测试,基板表面Cu导体方阻小于5mΩ/□。 相似文献
993.
994.
Yunpeng Wang Zhaoyun Wang Changyi Zhao Hongjun Wang Jinzhong Liu Jialan Lu Dehan Liu 《Journal of Petroleum Geology》2007,30(4):339-356
In this paper we derive kinetic parameters for the generation of gaseous hydrocarbons (C1‐5) and methane (C1) from closed‐system laboratory pyrolysis of selected samples of marine kerogen and oil from the SW Tarim Basin. The activation energy distributions for the generation of both C1‐5 (Ea = 59‐72kcal, A = 1.0×1014 s?1) and C1 (Ea = 61‐78kcal, A = 6.06×1014 s?1) hydrocarbons from the marine oil are narrower than those for the generation of these hydrocarbons from marine kerogen (Ea = 50‐74kcal, A = 1.0×1014 s?1 for C1‐5; and Ea = 48‐72kcal, A=3.9×1013 s?1 for C1, respectively). Using these kinetic parameters, both the yields and timings of C1‐5 and C1 hydrocarbons generated from Cambrian source rocks and from in‐reservoir cracking of oil in Ordovician strata were predicted for selected wells along a north‐south profile in the SW of the basin. Thermodynamic conditions for the cracking of oil and kerogen were modelled within the context of the geological framework. It is suggested that marine kerogen began to crack at temperatures of around 120°C (or 0.8 %Ro) and entered the gas window at 138°C (or 1.05 %Ro); whereas the marine oil began to crack at about 140 °C (or 1.1 %Ro) and entered the gas window at 158 °C (or 1.6%Ro). The main geological controls identified for gas accumulations in the Bachu Arch (Southwest Depression, SW Tarim Basin) include the remaining gas potential following Caledonian uplift; oil trapping and preservation in basal Ordovician strata; the extent of breaching of Ordovician reservoirs; and whether reservoir burial depths are sufficiently deep for oil cracking to have occurred. In the Maigaiti Slope and Southwest Depression, the timing of gas generation was later than that in the Bachu Arch, with much higher yields and generation rates, and hence better prospects for gas exploration. It appears from the gas generation kinetics that the primary source for the gases in the Hetianhe gasfield was the Southwest Depression. 相似文献
995.
采用非平衡等离子体与光催化剂相结合,对苯的降解进行了实验研究。考察了以不同吸附能力的玻璃球和γ-Al2O3为载体对苯降解率、碳平衡、CO2选择性、NOx及O3生成量的影响;研究了以γ-Al2O3为载体时,水蒸气含量对苯的降解率、碳平衡、CO2选择性、NOx及O3生成量的影响。实验结果表明,以具有吸附性的γ-Al2O3为载体可提高苯的降解率;当能量密度为618J/L时,苯的降解率可达98%;同时可降低O3的生成量,但NOx生成量增加;以γ-Al2O3为载体时,随水蒸气含量的增加,苯的降解率降低,特别是在低能量密度时,水蒸气对苯降解率的影响更为显著,但水蒸气的加入可抑制O3的生成,同时可提高碳平衡值。 相似文献
996.
The evaluation of the transverse electric (TE) surface field on an impedance boundary circular cylinder, excited by a magnetic current on the same surface is discussed. The source is of infinite axial extent. The integral which describes the field due to a single surface ray is evaluated numerically and asymptotically. The results compare well with each other as well as with the eigenfunction solution. The surface ray field has a uniform representation in the sense that it remains valid in the immediate vicinity of the infinitesimal source as well as in the deep shadow region. A comparison is made with a flat impedance plane to indicate the influence of curvature on the surface field. 相似文献
997.
998.
Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses 总被引:1,自引:0,他引:1
Min Xue Mingxiang Wang Zhen Zhu Dongli Zhang Man Wong 《Electron Devices, IEEE Transactions on》2007,54(2):225-232
Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low Vd-stress and in high Vd-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low Vd-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress 相似文献
999.
1000.
通过对奥氏体耐热钢21-4N碳化物析出行为的研究,探讨了对性能的影响,提出了改善其综合性能的措施和方法. 相似文献