Preparation of BaMgAl10O17∶Eu2+ and Its Phase Behavior in Microemulsion System

BaMgAl10O17∶Eu2 (BAM) was prepared in the microemulsion system and its phase behavior was studied. There exists a small region in the reverse microemulsion system where the dispersed particles are of spherical form. In this way, BAM blue phosphor with good dispersion can be synthesized. The microemulsion phase diagrams of the pseudo-ternary system (Triton X-100/cosurfactant-oil-BAM brine) were first established intuitively by the dilution method. The microstructure of microemulsions was determined through eyeballing, conductance technique, and polar optical microscopy. Its phase behavior is affected by various factors, such as temperature (room temperature, 30, 40 ℃), oil, surfactants, and cosurfactants in microemulsions. According to the phase diagrams, the microemulsion system of Triton X-100/1-hexanol-hexane-BAM brine was chosen to prepare the precursor. The BAM phosphor can be obtained via sintering the precursor at a comparatively low temperature. The phosphors were characterized by XRD and vacuum ultraviolet (VUV) spectra.     

Integrated carbon nanotube field emission differential amplifier: Modeling and measurement of the common-mode rejection ratio

A novel integrated vacuum field emission (VFE) differential amplifier (diff-amp) utilizing carbon nanotube (CNT) emitters has been developed. A dual-mask microfabrication process was employed to achieve a VFE diff-amp by integrating identical CNT VFE transistors with built-in split gates and integrated anodes. The identical pair of triode amplifiers was well-matched in their device characteristics. The measured ac small-signal characteristics of the diff-amp showed a common-mode-rejection ratio (CMRR) of ~ 320 (~ 50 dB). The proposed analytical model of the CMRR was verified to be in good agreement with the experimental data. The successful implementation of the CNT diff-amp demonstrates a new way to achieve temperature and radiation tolerant VFE integrated microelectronics.     

A Low-Power CMOS Linear-in-Decibel Variable Gain Amplifier With Programmable Bandwidth and Stable Group Delay

This brief presents a new circuit architecture for linear-in-decibel, constant-bandwidth variable gain amplifier (VGA). To obtain high linearity under low-voltage operation, this VGA is a closed-loop structure. In loop amplifier design, two techniques are applied: first, the loop amplifier is given finite input impedance. This arrangement keeps the VGA bandwidth constant under different gain setting. Second, a current-buffered compensation is applied for loop stability. Compared to the Miller compensation, this method achieves wider bandwidth. The prototype chip using 0.18-mum CMOS technology demonstrates that -10- to 20-dB gain and 0.5- to 30-MHz bandwidth can be programmed independently. The group delay difference within 30-dB gain control range is smaller than 1%. The total circuit dissipates 1.35 mA from a 1.8-V supply     

镍氢电池负极用低成本储氢合金的研究

研究了ABS型储氢合金在低Co含量条件下，随B组元替代元素Co，Al，Si等含量的变化对合金电化学性能的影响规律，同时研究了A组元中不同La／Ce比对合金电化学性能的影响情况。结果表明，随合金中Co含量的降低，合金的活化性能和放电容量得以改善，但合金的循环寿命下降也比较明显；在试验范围内，随Al元素的加入，合金的循环寿命得以改善，但材料的放电容量和活化性能均有所下降；随合金La／Ce比的降低，合金的放电容量略有下降，但其循环寿命和放电电压平台有较大提高。     

防治水泥稳定碎石基层沥青路面裂缝的措施浅析

水泥稳定碎石基层沥青路面裂缝产生的原因复杂 ,但非荷载型裂缝更为主要。防治水泥稳定碎石基层沥青路面的裂缝应该从设计和施工两方面考虑 ,其中由结构、材料组成设计 ,以及施工工艺出发控制水泥稳定碎石基层本身的收缩也是一项重要措施。     

Spin Dependent Hopping in Ti Doped La0.67 Ca0.33 MnO3

A systematic investigation of the magnetic and transport properties of Ti doped La0.67Ca0.33MnO3 was reported. The Ti substitution for Mn ions results in a reduction in ferromagnetism and conductivity. The metal-insulator transition temperature is close to Curie temperature which decreases from 274 to 82 K as x increases from 0 to 0.17. The most important effect of Ti doping is to introduce spin clusters in the samples due to the distortion of local lattice and the inhomogeneous magnetic structure induced primarily by the random distribution of Mn ions. A maximum magnetoresistance ratio as large as 90% in 1 T at 122 K was obtained for the sample with x =0. 055, which is four times larger than that obtained for LCMO sample at 272 K. There is a remarkable field-history dependent MR in the cooling process for the doped samples while such phenomenon disappears in the warming run. The resistivity follows well the variable range hopping behavior in paramagnetic state. Both the size effect and spin dependent hopping of carriers between the spin clusters should be considered in this system.     

AMBE-1000声码器接口电路设计方法

DVSI公司的AMBE-1000声码器芯片是一款高性能的全双工、实时语音压缩编解码芯片,可以应用于卫星通信、保密通信、视频会议等领域.文中简要介绍AMBE-1000声码器的A/D-D/A接口以及信道接口的工作原理;结合实例分别给出了AMBE-1000声码器与PCM编解码器MC14LC5480的A/D-D/A接口电路、与单片机AT89C51的信道接口电路的设计方法;最后指出了电路设计中应该注意的问题.     

关于本地传输网网络优化的探讨

根据长期工作经验,对现有网络存在的问题进行分析,提出对本地传输网网络优化的有关建议。