Pulmonary vasoconstrictor effects of prostacyclin in rats: potential role of thromboxane receptors

Endogenous prostacyclin (PGI2; epoprostenol) is a potent endothelium-derived pulmonary vasodilator. However, the effects of exogenous PGI2 on isolated arteries could be either relaxant or contractile, depending on the species and organ studied. The present study investigated the distal pathways involved in the PGI2-induced contraction in rat intrapulmonary artery (PA) and relaxation in lamb PA. When vessels were precontracted with 30 mM K+, PGI2 (1 microM) induced relaxation in lamb PA but caused contraction in rat PA. Use of 30 mM K+, phenylephrine, serotonin, angiotensin II, or hypoxia to precontract the vessels did not alter the contractile effect of PGI2 in rat PA. Nevertheless, PGI2 produced a mild relaxation in rat PA precontracted by U-46619, a thromboxane A2 (TxA2)-receptor agonist, whereas the TxA2-receptor blocker SQ-29548 (0.1-0.5 microM) abolished the contractile response in rat PA. These data suggest that PGI2-induced contraction is mediated by activation of TxA2 receptors. The PGI2-induced modest relaxation in rat PA, which was only observed when TxA2 receptors were blocked by SQ-29548, suggests that the PGI2-mediated vasorelaxant pathway is diminished in these vessels. Simultaneous application of forskolin, an adenylate cyclase activator, and rolipram, a phosphodiesterase inhibitor, caused similar relaxation in both rat and lamb PA. This suggests that the adenosine 3',5'-cyclic monophosphate-dependent relaxing pathway is intact in rat PA and is comparable to that in lamb PA. On the basis of these data, we conclude that the pathways responsible for the paradoxical effects of PGI2 on rat and lamb PA are located upstream of the adenosine 3',5'-cyclic monophosphate-dependent relaxing pathway and that a paucity of PGI2 receptors in rat PA may be responsible.     

激光对改变胰岛致免疫性的影响

新生猪胰岛样细胞团经准分子激光照射预处理后，其免疫原性明显降低，表明经激光预处理，有可能延长移植物存活时间。     

裂解C_5馏分综合利用的对策

探讨了裂解C_5馏分就近集中分离综合利用和分散直接利用,以及建设单独分离双环戊二烯装置发展下游精细化工产品的综合利用策略。     

Minimum entropy and information measure

Kapur et al. (1995) introduced the MinMax information measure, which is based on both maximum and minimum entropy. The major obstacle for using this measure, in practice, is the difficulty in finding the minimum entropy. An analytical expression has already been developed for calculating the minimum entropy when only variance is specified. An analytical formula is obtained for calculating the minimum entropy when only mean is specified, and numerical examples are given for illustration     

4- and 13-GHz tuned amplifiers implemented in a 0.1-μm CMOStechnology on SOI, SOS, and bulk substrates

Four- and 13-GHz tuned amplifiers have been implemented in a partially scaled 0.1-1 μm CMOS technology on bulk, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS) substrates. The 4-GHz bulk, SOI, and SOS amplifiers exhibit forward gains of 14, 11, and 12.5 dB and F_min's of 4.5 (bulk) and 3.5 db (SOS). The 13-GHz SOS and SOI amplifiers exhibit gains of 15 and 5.3 dB and F_unn's of 4.9 and 7.8 dB. The 4-GHz bulk amplifier has the highest resonant frequency among reported bulk CMOS amplifiers, while the 13-GHz SOS and SOI amplifiers are the first in a CMOS technology to have tuned frequencies greater than 10 GHz. These and other measurement results suggest that it may be possible to implement 20-GHz tuned amplifiers in a fully scaled 0.1-1 μm CMOS process     

丙酮酸乙酯合成新工艺

以叔丁基过氧化氢(TBHP)为氧化剂,四丁基溴化铵(TBAB)为相转移催化剂,有效地将乳酸乙酯氧化合成丙酮酸乙酯,产品纯度达98% 以上.该反应操作简单,无污染, 为丙酮酸乙酯合成开辟了新方向.     

Anomalous variations of OFF-State leakage current in poly-Si TFTunder static stress

Studies the anomalous variations of the OFF-state leakage current (I_OFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous I_OFF can be attributed to (1) I_OFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) I_OFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T _OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/L_CH)     

气囊内模制作桥面板在华丰湾防洪工程中的应用

采用气囊作内模进行浇筑桥面板混凝土 ,加快了预制桥面板施工进度 ,确保工程施工质量 ,并降低了工程施工成本     

真空微电子三极管几何参数的设计考虑

真空微电子三极管是近年来兴起与发展的真空微电子学中的一类重要器件。本文从真空微三极管的工作特性出发,分析了这类器件中所需考虑的几何参数和工作特性的关系,并给出了一些理论和实验公式,为今后的设计提供一些参考。