一种基于可信度矩阵的多传感器目标识别方法

为了解决多传感器目标识别中不同等级信息源数据的融合问题,在研究DSmT证据理论的基础上,引入证据可信度矩阵.依据可信度矩阵对证据进行转化,使之可以用传统的方法进行证据融合.将这种方法应用到等级不同的多传感器目标识别中,可以解决传统证据理论只能进行相同等级传感器目标识别的难题.仿真实验表明,该方法提高了目标识别的准确性和有效性.     

Picture or it didn’t happen: catch the truth for events

Multimedia Tools and Applications - Pictures spreading on the Internet are essential for the authenticity of events. Each day, huge amounts of data are published on social media, and many of them...     

Visual topic discovering,tracking and summarization from social media streams

Multimedia Tools and Applications - Nowadays, microblogging has become popular, with hundreds of millions of short messages being posted and shared every minute on a variety of topics in social...     

Multiplication fusion of sparse and collaborative representation for robust face recognition

Multimedia Tools and Applications - Sparse representation based classification (SRC) and collaborative representation based classification (CRC) are two well-known methods in representation-based...     

YAKS710-4 6 300kW 6kV高压增安型三相异步电动机的研制

介绍了YAKS710－46300kW 6kV高压增安型三相异步电动机的研制过程、性能指标及防爆安全性等，对该电动机的技术经济性进行了分析，并提出了非防爆型避雷器，电容器在防爆危险区域内应用所采取的措施。     

管理层收购的理论依据及对我国实践的效应分析

管理层收购起源于资本市场相对成熟的英美国家,其理论基础是西方经济学家提出的效率提高论,代表理论有代理成本说、防御剥夺说、信息不对称性假说。文章分析了管理层收购对我国企业的正负影响,由此提出今后我国管理层收购的几点思路。     

Low-temperature synthesis of nanocrystalline ZnGa2O4:Tb phosphors via the Pechini method

The synthesis of trivalent terbium doped ZnGa₂O₄ nanosized new phosphors by the Pechini method was reported. Well-crystallized ZnGa₂O₄:Tb³⁺ phosphors were obtained at low-temperature about 550 °C. The phosphors formed porous agglomerates which consist of spherical nanocrystallites with a uniform size at about 30 nm. The photoluminescence of the phosphors included both the luminescence of ZnGa₂O₄ host and characteristic emission of Tb³⁺, and the excitation spectra showed an energy transfer from the host lattice to the activator. The Tb³⁺ emission from the phosphors prepared by the Pechini process was more intensive than that of phosphors by solid-state reaction process.     

Effect of Ion Dose on Growth of Relaxed SiGe Layer on Ion Implantation Si Substrate

Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.