Smart TDI readout circuit for long-wavelength IR detector

A smart time delay and integration (TDI) readout circuit is suggested which performs background suppression, cell-to-cell non-uniformity compensation, and dead pixel correction. Using the smart TDI readout circuit, the integration capacitor area occupying almost the whole area of a unit-cell can be reduced to one-fifth and transimpedance gain can increase by five times. From measurement results, it is found that the skimming current error for a few hundred nA background current is < 1.25 nA corresponding to LSB/2 of ADC and the non-uniformity introduced by cell-to-cell background current variation is reduced to 1.02 nA     

长距离管线监测系统的一种智能化过流防护方法

介绍了长距离管线监测系统的一种智能化过流防护方法，详细说明其电路设计原理及相关元件的选择，并与串联自复过流保护元件方式相比较，分析其整体性能，说明其具有响应速度快，安全可靠等特点。     

Effects of solidification structure on fatigue crack initiation and fatigue strength in Al−Si−Mg cast alloys

Rotating-bending uniaxial fatigue tests and micro-fatigue crack initiation tests were carried out using a permanent mold cast (PMC) and semi-solid die cast (SDC) with Al−7%Si−0.35%Mg composition in order to examine the relationship between solidification structures and fatigue behaviors. The crack length was measured using a replication method. Fatigue strength was improved in SDC, which was almost consistent with the predicted fatigue strength using the size of Si particle cluster. Resistance to fatigue crack initiation and fatigue strength were improved in SDC owing to the finer Si cluster and to higher ultimate tensile strength. Fatigue crack in PMC was preferentially initiated at pores. For SDC, the fatigue crack was initiated at the Si particle/matrix interface, and then sucessively grew along eutectic cell boundaries.     

粉末冶金法制备PSZ/Mo复合材料的研究

本文采用粉末冶金法制备了不同成分的PSZ/Mo复合材料。并对其密度、弹性模量和热膨胀系数进行了测量和分析 ,用XRD进行了物相分析。实验结果表明 :纳米氧化锆的烧结性能比金属钼好 ;弹性模量估算选用简单混合法则进行计算时应进行修正 ;钼和氧化锆在烧结时不发生化学反应。通过热压PSZ/Mo功能梯度材料的断口扫描分析发现 :虽然金属钼和纳米氧化锆具有一定增韧作用 ,但材料断裂方式仍以脆性断裂为主     

A novel cyclic process using CaSO4/CaS pellets for converting sulfur dioxide to elemental sulfur without generating secondary pollutants: Part II. Hydrogen reduction of calcium-sulfate pellets to calcium sulfide

The reduction of calcium sulfate to produce calcium sulfide is a part of the cyclic process for converting sulfur dioxide to elemental sulfur that is described in Part I. The kinetics of the hydrogen reduction of nickel-catalyzed calcium-sulfate pellets were investigated using a thermogravimetric analysis (TGA) technique at reaction temperatures between 1023 and 1088 K and hydrogen partial pressures between 12.9 and 86.1 kPa. The reactivity of nickel-catalyzed calcium-sulfate pellets was demonstrated by the conversion of 70 pct fresh nickel-catalyzed calcium sulfate to calcium sulfide in 20 minutes at 1073 K under a hydrogen partial pressure of 86.1 kPa. Furthermore, the reactivity remained relatively intact after ten cycles of reactions and regenerations. This observed characteristic of the pellets is important because the solids must be reusable for repeated cycles to avoid generating secondary pollutants. The nucleation and growth rate expression was found to be useful in describing the kinetics of the reaction, which had an activation energy of about 167 kJ/mol (∼40 kcal/mol) in all reaction cycles except for the first regenerated samples that were lower at 146 kJ/mol (35 kcal/mol). The reaction order with respect to hydrogen partial pressure was 0.22 in all cycles with the exception of the first regenerated sample for which it was 0.37.     

Effects of extended dislocations on charge distribution in GaN epilayer

We have investigated the effect of extended dislocations (0.5-3 μm) on charge distribution in GaN epilayer grown by metalorganic chemical vapor deposition on (0001) sapphire using atomic force microscopy (AFM) and scanning surface potential microscopy (SSPM). It has been observed for the surface at the extended dislocations present in undoped GaN film to be negatively charged showing 0.04-0.2 V higher potential relative to regions that contain no dislocations. In addition to the higher potential at the dislocation core, the surrounding surfaces, including the edge of the dislocations, are also negatively charged in a symmetric way around the dislocations revealing crater-shaped higher potential regions (∼0.04 V) relative to surrounding dislocation-free area. The experimental results show that the protrusion-type of dislocation is also negatively charged and its potential is dependent on the size of dislocation.     

基于公钥加密算法和PPCT动态图编码的软件指纹方案

提出了一种综合PPCT动态图编码方法和椭圆曲线加密算法的软件指纹方案,该方案将公钥加密技术和软件水印技术综合应用于软件版权的保护和验证过程中,充分利用两者的优势,具有安全性高和抗恶意篡改能力强的特点.     

A continuum-based modeling of MEMS devices for estimating their resonant frequencies

A continuum-based modeling of coupled electrostatics-structure interactions is presented for the frequency computations of MEMS devices. The present general formulation of electrostatics accounting for free space is validated first by specializing it to one-dimensional uniform motion of conducting surfaces and comparing the resulting electrostatics to conventional lumped models. The general coupled electrostatics-structure interactions are then applied for the prediction of resonant frequencies of MEMS devices due to bias-voltage changes and temperature variations. Comparisons of predicted resonant frequencies obtained by the present coupled electrostatics-structure interaction models with experimental results available in the literature demonstrate that the proposed continuum-based interaction modeling yields high-confidence predictions of resonant frequencies of MEMS devices.     

使用无线网络分析器调试ZigBee协议系统

本文详细探讨了使用无线网络分析器调试ZigBee协议系统的基本方法,从而便于更好地确保网络的可靠性.     

A 0.9 V 92 dB Double-Sampled Switched-RC Delta-Sigma Audio ADC

A 0.9 V third-order double-sampled delta-sigma audio ADC is presented. A new method using a combination of a switched-RC technique and a floating switched-capacitor double-sampling configuration enabled low-voltage operation without clock boosting or bootstrapping. A three-level quantizer with simple dynamic element matching was used to improve linearity. The prototype IC implemented in a 0.13 CMOS process achieves 92 dB DR, 91 dB SNR and 89 dB SNDR in a 24 kHz audio signal bandwidth, while consuming 1.5 mW from a 0.9 V supply. The prototype operates from 0.65 V to 1.5 V supply with minimal performance degradation.