R-Calculus for ELP:An Operational Approach to Knowledge Base Maintenance

Sme concepts used in knowledge base maintenace,such as sequence,new law,user‘s rejection and reconstructions of a knowledge base,are first introduced,and then a framework for extended logic programming(ELP)is given,where an extended logic program is equivalent to a knowledge base.A transition system called R-calculus for ELP is provided.For a given knowledge base and a user‘s rejection,the R-calculus for ELP will deduce best revisions of the base.The soundness and the completeness of the R-calculus for ELP are proved,and the R-calculus for ELP is implemented in Prolog.In addition,the research is compared with other relevant work.     

心电地图仪中工频干扰的一种滤除方法

在心电地图仪中记录到的体表心电信号往往由于电磁的影响而引进工频干扰．基于体表心电信号中工频干扰的特点，作者提出了一种滤除工频干扰的方法，即就单独—胸导联信号通过提高频谱的分辨率来估计工频干扰的频率；基于最小均方误差准则来估计各导联信号中工频干扰的幅度和相位。文中还给出了该算法的流程图和滤波性能分析。模拟结果表明了该算法的有效性。应用该算法对心电地图仪中的工频干扰进行对消，取得了满意的结果。     

对分布式数据库发展方向的分析

本文对分布式数据库的设计方法、分割与分配技术作了一些探讨，并就分布式数据库的发展方向进行了初步分析。     

长江重要堤防隐蔽工程建设投资对扩大内需、拉动经济的作用和影响

长江重要堤防隐蔽工程是党中央、国务院实施积极财政政策进行长江堤防建设的重要组成部分，隐蔽工程既是重要的基础设施，也是重要的环境保护工程，隐蔽工程与其他行业的关联性很强，对众多行业具有巨大的带动作用，有效地扩大了内需，拉动了经济增长。     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

两种波长激光血管内照射生物效应比较

目的：研究同等照射条件的低强度532nm与633nm激光血管内照射生物效应的特点。方法：用532nm和633nm激光对健康大耳白家兔血管内照射，平均照射功率均设定在5mW左右，照射总能量约12J。两组家兔均于照前及照后1d、4d、7d、11d采集外周血，检测血浆ET、NO、MDA含量和SOD活性。结果：两组家兔上述各指标随照后时间的变化规律相似，经方差分析组间各指标都没有显著性差异。结论：同等照射条件下，低强度532nm与633nm激光照射血液的生物效应相似。     

搪瓷釜的使用维护与常用修补方法

介绍搪瓷釜的使用维护要点，简单介绍目前国内外常用的搪瓷釜修补方法，从用、管、修相结合出发来延长搪瓷釜的使用寿命。     

高质量ZnO薄膜的退火性质研究

在LP－MOCVD中，我们利用Zn(C2H5)2作Zn源，CO2作氧源，在（0002）蓝宝石衬底上成功制备出皮c轴取向高度一致的ZnO薄膜，并对其进行500℃-800℃四个不同温度的退火。利用XRD、吸收谱、光致发光谱和AFM等手段研究了退火对ZnO晶体质量和光学性质的影响。退火后，（0002）ZnO的XRD衍射峰强度显著增强，c轴晶格常数变小，同时（0002）ZnOX射红衍射峰半高宽不断减小表明晶粒逐渐增大，这与AFM观察结果较一致。由透射谱拟合得到的光学带隙退火后变小，PL谱的带边发射则加强，并出现红移，蓝带发光被有效抑制，表明ZnO薄膜的质量得到提高。     

北京谱仪漂移室读出电子学校准电路

本文介绍的电路可同时进行时间和电荷校准,它的校准量程大,精度高,稳定性好,可输出864路指数形校准信号,并可手动或程控。它的时间校准精度优于±250ps,电荷量校准精度优于±1％。     

寒区沥青胶浆延性研究

首交提出了沥青胶浆延工的概念，并测定、分析了两种寒区沥青、四种粉胶比在四个温度下的沥青胶浆延度。认为沥青胶浆延度较沥青延度更能反映沥青混合料的流变性能，而且胶浆延度与温度、粉胶比之间有很好的相关性。