A 10 Gb/s receiver with half rate period calibration CDR and CTLE/DFE combiner

This paper presents the design of a 10 Gb/s low power wire-line receiver in the 65 nm CMOS process with 1 V supply voltage.The receiver occupies 300×500/μm2.With the novel half rate period calibration clock data recovery(CDR)circuit,the receiver consumes 52 mW power.The receiver can compensate a wide range of channel loss by combining the low power wideband programmable continuous time linear equalizer(CTLE)and decision feedback equalizer(DFE).     

Effects of electron- and impurity-ion-LO phonon couples on the impurity states in cylindrical quantum wires

The variational method and the effective mass approximation are used to calculate the phonon effects on the hydrogenic impurity states in a cylindrical quantum wire with finite deep potential by taking both the couplings of the electron-confined bulk longitudinal optical (LO) phonons and the impurity-ion-LO phonons into account.The binding energies and the phonon contributions are calculated as functions of the transverse dimension of the quantum wire. The results show that the polaronic effect induced by the electron-LO phonon coupling and the screening effect induced by the impurity-ion-LO phonon coupling tend to compensate each other and the total effects reduce the impurity binding energies.     

A VCO sub-band selection circuit for fast PLL calibration

consumes 0.64 mA at most.     

Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs

Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by applying additive mechanical uniaxial stress to bulk Si and SiGe-virtual-substrate-induced strained-Si (s-Si) p-MOSFETs (metal-oxide-semiconductor field-effect transistors) along <110> and <100> channel directions. In bulk Si, a mobility enhancement peak is found under uniaxial compressive strain in the low vertical field. The combination of (100) direction uniaxial tensile strain and substrate-induced biaxial tensile strain provides a higher mobility relative to the (110) direction, opposite to the situation in bulk Si. But the combinational strain experiences a gain loss at high field, which means that uniaxial compressive strain may still be a better choice. The mobility enhancement of SiGe-induced strained p-MOSFETs along the (110) direction under additive uniaxial tension is explained by the competition between biaxial and shear stress.     

Learning from Examples with Information Theoretic Criteria

This paper discusses a framework for learning based on information theoretic criteria. A novel algorithm based on Renyi's quadratic entropy is used to train, directly from a data set, linear or nonlinear mappers for entropy maximization or minimization. We provide an intriguing analogy between the computation and an information potential measuring the interactions among the data samples. We also propose two approximations to the Kulback-Leibler divergence based on quadratic distances (Cauchy-Schwartz inequality and Euclidean distance). These distances can still be computed using the information potential. We test the newly proposed distances in blind source separation (unsupervised learning) and in feature extraction for classification (supervised learning). In blind source separation our algorithm is capable of separating instantaneously mixed sources, and for classification the performance of our classifier is comparable to the support vector machines (SVMs).     

氢化非晶硅薄膜H含量控制研究进展

氢化非晶硅薄膜(a-Si∶H)是目前重要的光敏材料,而薄膜中的H含量及组态对薄膜的稳定性有着极其重要的影响。介绍了H对薄膜稳定性影响的原理,提出了控制薄膜中的H含量的必要性。分析了H在H稀释硅烷法制备氢化非晶硅中的作用,论述了制备工艺中衬底温度、H稀释比、气体压强等对薄膜H含量的影响及其机理,并对用不同方法控制H含量的优缺点进行了比较,分析了通过以上三种方法控制薄膜H含量的局限性。探寻了控制薄膜H含量的新方法,并对该领域的发展方向进行了展望。     

Si外延过程中图形漂移的研究

给出了图形漂移的定义,综合介绍了埋层外延中图形漂移的监测方法,其中包括常规的磨角染色法和无损伤测量垂直和平行于参考面两个方向上图形线宽的变化比例法。结合不同面上的原子密度的不同,分析各晶向上生长速率的差异,解释了不同晶向上不同的生长速率是造成图形漂移的根本原因。通过比对常压和减压外延的机理,明确了Si源中氯类物质的存在是导致图形漂移的必要条件。结合Si外延过程中对图形漂移的影响因素,分别指出了衬底晶向、淀积时反应室压力、生长速率和生长温度、HCl对Si片表面腐蚀量、Si源等6个参量和图形漂移的关系,并给出了6个参量的优化方向。     

掺镱大功率光子晶体光纤激光器热效应分析

数值模拟分析了大功率光子晶体光纤(PCF)激光器的温度场和热应力场.通过引入等效热传导率对光子晶体光纤结构进行简化,建立了光子晶体光纤激光器的三维温度场模型.利用有限元方法数值模拟得到了自然对流换热时光子晶体光纤中的温度场及光纤端面的热应力场,并对强制对流换热时光子晶体光纤的冷却效果进行了数值模拟分析.结果表明,对于选取的PCF,通过采取强制对流换热措施可以承受1000 W的抽运功率而不会产生热效应损伤,如果需要通过提高抽运功率以获得更大功率的激光运转,则需要改变光纤的结构.     

脉冲太赫兹波成像与连续波太赫兹成像特性的比较

对脉冲太赫兹(THz)波成像和连续波太赫兹成像进行了对比研究.在两个系统下分别进行实验,对两个成像系统的成像机理、系统分辨率、系统噪声、成像速度、信息量、价格、复杂性、便携性及其应用进行多方面的比较.研究结果表明,脉冲系统可以获取更多信息,连续波系统简单便捷,两者在应用上具有各自的特点,同时又有很好的互补性.另外,就脉冲太赫兹波成像的多波长特点,探讨了太赫兹波多光谱成像识别方法.     

基于半球空间光纤阵列的双向反射分布测量

提出了一种基于半球空间光纤阵列的双向反射分布函数(BRDF)测量方法与系统.将多根光纤组成的阵列均匀分布于一半球面上,使球心处物体表面反射的光在三维空间中的角分布转换为同一平面上的二维图像,经CCD采集及相应的数据处理,可实现对物体表面双向反射分布函数的快速测量.同时,利用光纤将照射激光束传输到物体表面待测点,并通过光纤的弯曲角度可改变光束的入射角.利用该测量系统对不同材质、不同加工工艺的物体表面的激光反射分布进行了初步的测量和分析.结果表明,相比传统的扫描式测量系统,该测量系统在提高测量速度的同时,避免了由于光源功率的起伏和探测器响应度的涨落所引起的测量误差,且结构简单,使用方便.