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71.
Assaderaghi F. Chen J. Solomon R. Chian T.-Y. Ko P.K. Hu C. 《Electron Device Letters, IEEE》1991,12(10):518-520
It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested 相似文献
72.
GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl3 consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al2 O3 were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature. 相似文献
73.
Experimental studies on the aerodynamic coupling effect on natural frequencies and flutter instability of rotating disks
are investigated in this paper. The experiments performed using a vacuum chamber and optical disks give two main results.
One is that the aerodynamic effect by surrounding air reduces the natural frequencies and critical speeds of the vibration
modes in pre-flutter regions. The other is that the natural frequency of the disk rotating at ambient atmospheric pressure
is equal to that in vacuum at the flutter onset speed where the disk experiences aero-induced flutter. In post-flutter regions,
the aerodynamic coupling between the disk and surrounding air increases the natural frequencies of the disk.
Received: 17 June 2002/Accepted: 7 October 2002
The work was supported by Grant No. R11-1997-042-090001-0 of the Center for Information Storage Devices designated by the
Korea Science & Engineering Foundation.
Paper presented at the 13th Annual Symposium on Information Storage and Processing Systems, Santa Clara, CA, USA, 17–18 June,
2002 相似文献
74.
This paper presents a simple but relatively accurate procedure for the analysis of unbonded prestressed continuous flat slabs. Bi‐circular curves instead of conventional parabolic ones are introduced to obtain the characteristic parameters of the curved tendon profiles. Based on the proposed tendon profile and theory of thin plates, a series of simple formulae are derived to compute the bending moments of flat slabs. The validity of the proposed method is demonstrated by comparing the results with those obtained from finite element analysis. The results of the analysis presented in this paper indicate that the proposed method turns out to be convenient and reasonably accurate in the analysis of prestressed flat slabs. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
75.
The current carrying capacity of single-walled semiconducting carbon nanotubes (CNTs) is studied by self-consistent quantum
simulations using the non-equilibrium Green’s function formalism with the self-consistent Born approximation. The simulation
shows that the current carrying capacity depends on the bias regime and is drastically different from that of metallic tubes.
For long CNTs (with a length much longer than zone boundary and optical phonon scattering mean free path), the current saturates
around 20 μA in the forward bias regime with unipolar transport due to phonon scattering. In ambipolar transport regime, the
current delivery limit is still about 20 μA due to recombination of electron and hole currents. In contrast, for short semiconducting
CNTs, the current delivery capacity can be above 25 μA in the unipolar transport regime and further double in the ambipolar
transport regime. In reverse bias regime, the current of a long CNT can exceed 20 μA due to the second subband conduction
and increased electron injection from the drain. The simulation provides a coherent explanation to the dependence of current
delivery limit on bias regime and channel length, which is consistent with recent experiments. 相似文献
76.
In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p2-Ga0.8In0.2As0.19Sb0.81/p1-Ga0.9In0.1As0.09Sb0.91 and N1-GaSb/n2-Ga0.9In0.1As0.09Sb0.91/p-Ga0.8In0.2As0.19Sb0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga0.8In0.2As0.19Sb0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N1-n2-p structure is more sensitive than that with the p1-side surface recombination velocity for the N-p2-p1 structure. In the N-p2-p1 structure with the incident light from the p1-side surface, two-color detection is achieved. 相似文献
77.
The purpose of this study was to evaluate the relationship between the number of yolk sacs and amnionicity in monochorionic twin pregnancies scanned early in the first trimester. We retrospectively reviewed images of all monochorionic twins scanned between 6 and 9.5 weeks' gestation and with pathologic or sonographic confirmation of chorionicity-amnionicity. Each film was reviewed for the number of yolk sacs present, as well as for the gestational age at which the amniotic membrane was first visualized. Twenty monochorionic-diamniotic pregnancies and two monochorionic-monoamniotic pregnancies met the criteria for inclusion in the study. In diamniotic pregnancies scanned at less than 8 weeks' gestation, only the yolk sacs were identified; none of the dividing amniotic membranes were detected. Two yolk sacs were identified in all but one case. In this case, although one yolk sac was seen at 6 weeks, follow-up scanning at 8 weeks revealed two yolk sacs. In each of the monochorionic-monoamniotic twin pregnancies, one yolk sac was seen at 9 weeks and a single amnion encircled both embryos. We conclude that the sonographic identification of two yolk scas in monochorionic twins enables us to make the diagnosis of diamniotic twins early in the first trimester, before the amniotic membrane can be imaged. The presence of one yolk sac should prompt a follow-up ultrasonogram to assign amnionicity definitively. 相似文献
78.
79.
Improving the efficiency of induction motors, which are the most energy consuming electric machines in the world, saves much energy. The efficiency can be increased by improving cooling performance as well as by using better materials or by improving electromagnetic performance with better design. This paper presents the relationship between the efficiency or the losses and the temperature of coils with experiments as well as simulations by changing parameters such as the load and the flow rate of cooling air. The losses and the efficiency are calculated from an equivalent circuit method as well as experiments. Coil temperatures variation affects much on the efficiency. The internal cooling method is better than that of external cooling for the coil temperature reduction. Several cooling methods are compared focusing on the fan efficiency and performance, from which the values of the efficiencies of the motors are expected. The fan efficiency as well as the fan performance should be considered for the optimum fan design to increase the total efficiency of a motor. The simulations are validated by the comparison with the experiments 相似文献
80.
This paper considers probability of bit error (Pe) analysis in asynchronous band-limited direct-sequence code-division multiple-access (DS-CDMA) systems. It presents a simple and accurate method of Pe analysis. The proposed method can serve as an attractive alternative to the only two techniques currently available for band-limited systems: the standard Gaussian approximation (SGA) and the characteristic function method. The former is prone to inaccuracy while the latter, large computational complexity. The method generalizes the simplified improved Gaussian approximation (SIGA) derived previously for rectangular pulses. This paper also outlines a generalization of another method referred to as the improved Gaussian approximation (IGA). Numerical examples demonstrate the far greater accuracy of the generalized SIGA with respect to the SGA. The examples consider the IS-95 and square-root raised cosine (Sqrt-RC) pulses as well as uniform and nonuniform received power conditions 相似文献