A third-generation SPARC V9 64-b microprocessor

This quad-issue processor achieves 1-GHz operation through improved dynamic circuit techniques in critical paths and a more extensive on-chip memory system which scales in both bandwidth and latency. Critical logic paths use domino, delayed clocked domino, and logic embedded in dynamic flip-flops for minimum delay. A 64-KB sum-addressed memory data cache combines the address offset add with the cache decode, allowing the average memory latency to scale by more than the clock ratio. Memory bandwidth is improved by using wave pipelined SRAM designs for on-chip caches and a write cache for store traffic. Memory power is controlled without increased latency by use of delayed-reset logic decoders. The chip operates at 1000 MHz and dissipates less than 80 W from a 1.6-V supply. It contains 23 million transistors (12 million in RAM cells) on a 244 mm² die     

A highly reliable GaInAs-GaInP 0.98-μm window laser

A novel window structure realized by selective N ion implantation and subsequent rapid thermal annealing has been applied to overcome the catastrophic optical damage (COD) of a GaInAs-GaInP laser emitting in the 0.98-μm wavelength region. A kink-free output power up to 220 mW at 25°C was obtained. Laser characteristics including the I-L, far-field pattern, and lasing spectrum were almost the same as those of a conventional nonwindow laser consisting of the same structure except for the window region. In a 50°C, APC-150 mW aging test, the window lasers have operated stably beyond 16 000 h, and no damage has been observed. Under this aging condition, a median lifetime of 280 000 h was obtained from log-normal plotting of aging characteristics. This marked improvement in reliability is due to a remarkable increase of damage tolerance realized by the window structure. In addition, there was minimal change in the characteristic of the window laser during the aging, indicating the absence of serious inner degradation. These results clearly show that our 0.98-μm window laser suppresses both COD failure and inner degradation satisfactorily and can be used in practical applications     

Orientation of nanowires consisting of poly(3-hexylthiophene) using strong magnetic field

Nanowires consisting of regioregular poly(3-hexylthiophene) (P3HT) as a conducting polymer were prepared using p-xylene. Magnetic processing of the nanowires was carried out using two superconducting magnets with horizontal (B_max = 8 T) and vertical (B_max = 10 T) directions. The formation of the nanowires was confirmed by atomic force microscopy (AFM) measurement. The results from the AFM images and the polarized absorption spectra on glass plates indicated that the nanowires partly oriented themselves with their long axes, which are parallel to the π–π stacking direction, being perpendicular to the magnetic field. The magnetic orientation is most likely ascribed to anisotropy in the magnetic susceptibilities of the ordered P3HT in the nanowires.     

Novel transdermal drug delivery system with polyhydroxyalkanoate and starburst polyamidoamine dendrimer

In search of an efficient transdermal drug delivery system (TDDS), a polyhydroxyalkanoate (PHA)-based system with a polyamidoamine dendrimer was examined. Tamsulosin was used as the model drug. The dendrimer was found to act as the weak enhancer. By adding the dendrimer, the dendrimer-containing PHA matrix achieved the clinically required amount of tamsulosin permeating through the skin model. This is also the first report of the application of PHA and dendrimer to the TDDS.     

Weighting matrix of quadratic performance index and design method of optimal deadbeat control system

A method of determination of the weighting matrix of the quadratic performance index and a method of design of an optimal deadbeat control system are discussed. First, the relationship between the weighting matrix of the quadratic performance index and the extra poles of the overparametrized pulse transfer function model is indicated. Next, a method of design of an optimal deadbeat control system is explained. Lastly, to demonstrate the effectiveness of the proposed method, some numerical examples are presented. © 2000 Scripta Technica, Electr Eng Jpn, 133(1): 53–63, 2000     

Impulse breakdown superposed on ac voltage in XLPE cable insulation

This paper discusses tree inception and breakdown voltage characteristics of XLPE cable insulation subjected to impulse voltages superimposed on ac voltage. The tree initiation tests were performed on laboratory-molded specimens equipped with needle electrodes, whereas the breakdown tests were conducted on a full-sized cable. The impulse tree initiation stress was found to be dependent on the magnitude of the pre-applied ac stress and the relative polarities of the impulse and the ac peak at the instant of their superposition. Although the impulse polarity has an effect on the tree inception, the general behavior is that the tree inception stress always decreases with an increase of the pre-applied ac stress. This phenomenon is discussed in terms of the space charge effect and the influence of the impulse voltage application itself. The impulse strength of a full-sized cable insulation was found to be independent of the pre-applied ac stress as long as that stress did not exceed the operating stress of a 500 kV cable insulation. However, subjecting cable insulation to higher ac stresses before impulse application caused a reduction of its breakdown strength as compared with the insulation without ac prestressing     

Effects of the introduction of the discrete energy loss process into Monte Carlo simulation of electron scattering

First, the single scattering model is briefly described. Next, the hybrid model is explained, which takes into consideration a part of the discrete energy loss processes. The Vriens or the Gryzinski cross section is used for core electron ionizations, and the Moller cross section for free electron excitations. The model is applied to the calculations of the energy distribution of transmitted electrons through a thin film and the depth distribution of generated x-rays. From comparisons among the calculated results with and without energy straggling and experimental data, it is found that the Gryzinski cross section shows the best result.     

Design of an epi-thermal neutron flux intensity monitor with GaN wafer for boron neutron capture therapy

Boron neutron capture therapy (BNCT) is a promising cancer therapy. Epi-thermal neutron (0.5 eV < E_n < 10 keV) flux intensity is one of the basic characteristics for modern BNCT. In this work, based on the ⁷¹Ga(n,γ)⁷²Ga reaction, a new simple monitor with gallium nitride (GaN) wafer as activation material was designed by Monte Carlo simulations to precisely measure the absolute integral flux intensity of epi-thermal neutrons especially for practical BNCT. In the monitor, a GaN wafer was positioned in the center of a polyethylene sphere as neutron moderator covered with cadmium (Cd) layer as thermal neutron absorber outside. The simulation results and related analysis indicated that the epi-thermal neutron flux intensity could be precisely measured by the presently designed monitor.