Low temperature deposition of hexagonal BN films by chemical vapour deposition

Transparent hexagonal BN films were deposited onto copper substrates from the reactant gas BCl₃-NH₃-H₂ at temperatures in the range 250–700°C. The lowest deposition temperature of the films was about 250°C. The films deposited at temperatures below 450°C were unstable in moist atmosphere and devitrified; a 20%–30% decrease in weight was observed when these films were heated above 600°C in an argon atmosphere. In contrast, the films deposited at temperatures above 600°C were very stable, decreased in weight by 1%–2% on heating and were stable in air at temperatures below 750°C.     

Occurrence,horizontal transfer and degeneration of VDE intein family in Saccharomycete yeasts

VDE is a homing endonuclease gene originally discovered as an intervening element in VMA1s of Saccharomyces cerevisiae. There have been two independent subfamilies of VDE, one from S. cerevisiae strain X2180-1A and the other from Saccharomyces sp. DH1-1A in the host VMA1 gene, and they share the identity of 96.3%. In order to search the occurrence, intra/interspecies transfer and molecular degeneration of VDE, complete sequences of VMA1 in 10 strains of S. cerevisiae, eight species of saccharomycete yeasts, Candida glabrata and Kluyveromyces lactis were determined. We found that six of 10 S. cerevisiae strains contain VDEs 99.7-100% identical to that of the strain X2180-1A, one has no VDE, whereas the other three harbour VDEs 100% identical to that of the strain DH1-1A. S. carlsbergensis has two VMA1s, one being 99.8% identical to that of the strain X2180-1A with VDE 100% identical to that of the strain DH1-1A and the other containing the same VMA1 in S. pastorianus with no VDE. This and other evidence indicates that intra/interspecies transmissions of VDEs have occurred among saccharomycete yeasts. Phylogenetic analyses of VMA1 and VDE suggest that the S. cerevisiae VDEs had branched earlier than other VDEs from an ancestral VDE and had invaded into the host loci as relatively late events. The two VDEs seemed to degenerate in individual host loci, retaining their splicing capacity intact. The degeneration of the endonuclease domains was distinct and, if compared, its apparent rate was much faster than that of the protein-splicing domains.     

Fast template matching algorithm for contour images based on its chain coded description applied for human face identification

A new matching algorithm for contour images described by chain coded expression is presented. In our face authentication system, the isodensity contours has been introduced to differentiate between the facial features. These isodensity contours can be transformed into chain codes. By using these coded isodensity contours, remarkable improvement in the processing performance can be expected in terms of the processing time and memory requirements.From the computer simulation performed using images of 50 people, it turned out clear that the processing time was decreased to approximately one-seventh compared to the conventional method. With respect to memory requirement, it was reduced to a quarter.     

Microstructure of External Stress Whiskers and Mechanical Indentation Test Method

Lead-free commercial products have been dramatically increasing in the world markets as the restriction of certain hazardous substances (RoHS) directive in the European Union has been enacted. At the same time, the problem of “tin whiskers” has become one of the most serious problems in the industry. Growth of tin whiskers is believed to be related to residual stress inside the tin plating film and external compressive stress. Whiskers in fine-pitch connectors have affected the practical production of advanced digital equipment. The Japan Electronics and Information Technology Industries Association (JEITA) has proposed a new testing method to evaluate tin whiskers, especially for the fine-pitch connectors. This paper describes the microstructures of external stress whiskers and the mechanical indentation test method.     

Growth of β-Alumina (Na2O · 11Al2O3) Single Crystals by the Flux Method

The crystal-growth process and growth conditions of β-alumina (Na₂O · Al₂O₃) were investigated using the Na₂B₄O₇-Na₃AlF₆ flux method. β-Alumina (electric fusion brick) was used as both nutrient and seed. Weight loss of the flux varied widely for various runs: ≅ 10 wt% of flux evaporated at 100 h, ≅ 17 wt% at 150 h, and 43 wt% at 600 h. When β-alumina crystal was grown, only 20 wt% Na₂B₄O₇ was added to the Na₃AlF₆ flux. The linear growth rates of the β-alumina single crystal grown by an Na₃AlF₆-20 wt% Na₂B₄O₇ flux method at 1040°C and Δ t = 18°C were ≅ 1.0 × 10⁻³ mm/h ( a face) and ≅0.3 × 10⁻³ mm/h ( c face). The β-alumina single crystals grown were bounded by only c [001] and a [100] and were colorless and transparent.     

Round‐robin measurement intercomparison of c‐Si PV modules among Asian testing laboratories

Because of recent advances in the production and installation of photovoltaic (PV) systems, the international conformity of PV module performance measurement has become increasingly important. The increase in PV production sites is particularly significant in the Asian region. The present paper summarizes and discusses the results of a round‐robin intercomparison of crystalline silicon modules among national laboratories and certified testing laboratories in the Asian region conducted from 2009 to 2011. Most of the values of P_max measured at the different laboratories were within a ±2% range, although some P_max results showed differences of up to about 3%. This result is comparable to that obtained in the recent intercomparison among international laboratories. Possible sources of difference in the measured values of I_sc, V_oc, FF, and P_max are discussed, for further improvement of international conformity in PV measurement technologies. Copyright © 2012 John Wiley & Sons, Ltd.     

Wheel/rail contact dynamics in turnout negotiations with combined nodal and non-conformal contact approach

In railroad turnouts, geometries of tongue and crossing rails are very complex and their shapes are changing along the track. Therefore, wheels are subjected to not only tread and flange contacts, but also the back-of-flange and top-of-flange contacts in the case of spring switches of tram vehicles. For this reason, one needs to deal with significant jumps in contact points for solving wheel/rail contact problems in turnout, and an accurate prediction of jumps in contact points is one of the most important issues that need to be carefully handled in the dynamic simulation of vehicle/turnout interactions. In this investigation, a numerical procedure that can be used for solving such a complex wheel/rail contact problem in turnout is proposed. In particular, a combined nodal and non-conformal contact approach is developed such that significant jumps in contact points are detected using the nodal search, while the exact location of contact point is then determined with continuous surface parameterizations using non-conformal contact equations. With this combined nodal and non-conformal contact approach for the contact geometry analysis of vehicle/turnout interactions, multiple look-up contact tables can be generated in an efficient way without losing accuracy. Since detailed contact search is performed off-line to obtain look-up contact tables, significant changes in contact points in turnout can be efficiently predicted on-line with tabular data to be interpolated in a standard way. Several numerical examples are presented in order to demonstrate the use of the numerical procedure developed in this investigation.     

Improvement of stability for organic solar cells by using molybdenum trioxide buffer layer

We demonstrated that the stability of organic solar cells (OSCs) under light irradiation is markedly enhanced by inserting a molybdenum trioxide (MoO₃) buffer layer between an anode layer of indium tin oxide (ITO) and a p-type layer of 5,10,15,20-tetraphenylporphyrin (H₂TPP) or N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (α-NPD). The use of the MoO₃ layer also enhanced open-circuit voltages and power conversion efficiencies of the OSCs due to an increase in built-in potential. From results of stability test of hole-only α-NPD devices, we concluded that the OSC degradation occurs near the ITO/p-type layer interface and that the use of the MoO₃ layer can prevent the degradation at this interface.     

Strain-mediated phase control and electrolyte-gating of electron-doped manganites

A prototype Mott transistor, the electric double layer transistor with a strained CaMnO(3) thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO(3) exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.