A transceiver PIC for bidirectional optical communication fabricated by bandgap energy controlled selective MOVPE

A transceiver PIC consisting of a DFB-LD, a receiver PD and a Y-shaped branch waveguides is realized by in-plane bandgap energy controlled selective MOVPE. Both active and passive core layers are formed in one step selective growth, and complicated fabrication procedure is no longer required. More than 1 mW fiber coupled power and 7 GHz receiver bandwidth are obtained. The modulation and detection operations at 500 Mb/s are successfully demonstrated.     

Design strategy and development of spherical silicon solar cell with semi-concentration reflector system

Structural and economical merits of a spherical silicon solar cell with semi-concentration reflector system have been discussed. The roles of the reflector system have been clarified; the reflector improves short-circuit current density and also open-circuit voltage by 4–6 times concentration to make a light irradiation area comparable to a p–n junction area. We have theoretically demonstrated that the spherical Si solar cell with semi-concentration reflector system can realize a performance comparable to that of conventional Si solar cells, with less amount of silicon material use.     

Preparation and properties of CuInS2 thin film prepared from electroplated precursor

Thin CuInS₂ films were prepared by sulfurization of Cu/In bi-layers. First, the precursor layer was electroplated onto the treated surface of Mo-coated glass. Observation of the cross-section prepared by focused ion beam (FIB) etching revealed that the void-free film was initially formed on the top surface of the precursor layer and continued to grow until the advancing front of the film reached the Mo layer. The nucleation of voids near the bottom of the CuInS₂ film followed. To determine whether the condition of the Cu/In alloy influences the CuInS₂ quality we investigated the Cu/In alloy state using FIB. We found that the annealed precursor of low Cu/In ratio (1.2) has several voids in the mid position in the layer compared with Cu-rich precursor (1.6). The cross-sectional view of the Cu-rich absorber layer is uniform compared with the low copper absorber layer. Thin film solar cells were fabricated using the CuInS₂ film (Cu/In ratio: 1.2) as an optical absorber layer. It was found that the optimization of a sulfurization period is important in order to improve the cell efficiency. We have not yet obtained good results with high Cu-rich absorber because of a blister problem. This blister was found before sulfurization. So, we are going to solve this blister problem before sulfurization.     

Microcavity distributed-feedback laser using dye-doped polymeric thin films

An organic microcavity laser, in which all the stacked polymer layers are doped with pyrromethene-567 dye, is presented. Singlemode laser oscillation at 568 nm was obtained that was located in the middle of the stopband. The lasing threshold was found to be 260 nJ/pulse, which corresponded to 300 muJ/cm² in the pulse energy density     

Wide-wavelength tunable lasers with 100 ghz fsr ring resonators

A widely tunable laser, consisting of a 100 GHz FSR triple-ring resonator and a semiconductor optical amplifier, is presented. The 100 GHz FSR ring resonator makes it possible to demonstrate 96 nm wavelength tuning with stable single-mode operation produced by a large threshold gain difference     

A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning

A 16 Mb embedded DRAM macro in a fully CMOS logic compatible 90 nm process with a low noise core architecture and a high-accuracy post-fabrication tuning scheme has been developed. Based on the proposed techniques, 61% improvement of the sensing accuracy is realized. Even with the smallest 5 fF/cell capacitance, a 322 MHz random-cycle access while 32 ms data retention time which contributes to save the data retention power down to 60 /spl mu/W are achieved.     

Sub-50-nm physical gate length CMOS technology and beyond usingsteep halo

Sub-50-nm CMOS devices are investigated using steep halo and shallow source/drain extensions. By using a high-ramp-rate spike annealing (HRR-SA) process and high-dose halo, 45-nm CMOS devices are fabricated with drive currents of 650 and 300 μA/μm for an off current of less than 10 nA/μm at 1.2 V with T_ox^inv =2.5 nm. For an off current less than 300 nA/μm, 33-nm pMOSFETs have a high drive current of 400 uA/μm. Short-channel effect and reverse short-channel effect are suppressed simultaneously by using the HRR-SA process to activate a source/drain extension (SDE) after forming a deep source/drain (S/D). This process sequence is defined as a reverse-order S/D (R-S/D) formation. By using this formation, 24-nm nMOSFETs are achieved with a high drive current of 800 μA/μm for an off current of less than 300 μA/μm at 1.2 V. This high drive current might be a result of a steep halo structure reducing the spreading resistance of source/drain extensions     

A 128-kb FeRAM macro for contact/contactless smart-card microcontrollers

This paper describes a 128-kb FeRAM macro for smart-card microcontrollers. This macro, which was designed and fabricated using a 0.35-/spl mu/m three-metal CMOS and a Capacitor-on-Metal/Via-stacked-Plug (CMVP) process technology, is ideally suited for recent system LSIs such as smart-card microcontrollers. It has a flexible memory size ranging from 32 to 128 kb, a low consumption current of 0.3 mA, and endurance of more than 10/sup 8/ write/read cycles under a wide range of supply voltages, from 2.7 to 5.5 V. These characteristics, which are required of not only contact-type smart-card microcontrollers but also contactless-type ones, were achieved by using four newly developed circuit technologies: 1) a three-metal CMVP memory cell; 2) a voltage-regulating architecture; 3) a main/sub bitline and wordline structure; and 4) a dynamic-type offset sense amplifier.     

LD抽运的Cr4+∶YAG被动调Q Nd∶YAG激光器

研究了不同谐振腔下不同透射率的Cr4 + ∶YAG调Q的激光输出特性。采用透射率为 82 %的Cr4 + ∶YAG ,在抽运功率 1 1W时 ,激光重复频率小于 3kHz,单脉冲能量达 2 0 μJ ,可以作为微脉冲激光雷达的发射光源。分析和比较了实验结果和理论计算 ,两者吻合较好     

Development of chip-on-flex using SBB flip-chip technology

A bare LSI chip mounted onto a flexible substrate is called chip-on-flex (COF). Companies and universities are desperately developing COF. In this paper, the development of COF using stud bump bonding (SBB) flip-chip technology will be introduced.So far, SBB technology has been adopted when ceramic or glass-epoxy is used as a substrate material for chip size packages (CSPs) and multi-chip modules (MCMs). Recently there is a great demand for developing SBB technology toward a flexible substrate.SBB technology needs to keep a flexible substrate flat during the assembly process. A flexible substrate was adhered to a flat carrier using a thermal release sheet in order to keep it flat. Since this thermal release sheet loses its adhesive strength by applying heat beyond 160°C, it is easy to peel off accomplished specimens from the flat carrier after assembling.SBB specimens were prepared using liquid crystal polymer (LCP) and polyimide (PI) as a flexible substrate. Reliability tests, such as pressure cooker test (PCT), thermal shock test (TST) and reflow soldering after moisture storage test, were carried out for these specimens. In PCT, both LCP and PI specimens passed as a result of using proper underfill for each substrate. In TST, both specimens also passed using the underfill selected in PCT. In reflow soldering after moisture storage test, LCP specimens passed, on the other hand PI specimens needed to be baked after moisture storage in order to pass the reflow.