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81.
A wavelength tunable multiwavelength pulse source with clock rate tunability is described. A tuning range of 32 nm and multiwavelength generation were achieved at a 10 GHz clock rate and a quasi-320 GHz OTDM signal. The device consists of a programmable PLC multiplexer and employs amplitude-to-wavelength conversion based on the Raman soliton effect  相似文献   
82.
An N*N self-routing planar network suitable for fabricating optical space switches on lithium niobate substrate is presented. The network has O(N/sup 2/) cross points, good modularity and expandability. It also has no waveguide crossovers and no differential attenuation between any of the input and output pairs. A self-routing control can be applied to this network, which is indispensable for ATM switching systems.<>  相似文献   
83.
Materials which show novel thermal properties can be used to make highly efficient and environmentally friendly energy systems for thermal energy storage and refrigeration through caloric effects. An A-site-ordered quadruple perovskite-structure oxide, NdCu3Fe4O12, is found to release significant latent heat, 25.5 kJ kg−1 (157 J cc−1), at the intersite-charge-transfer transition temperature near room temperature. The transition is first-order and accompanied by an unusual magnetic ordering and a large negative-thermal-expansion-like volume change, and thus, it causes a large entropy change (84.2 J K−1 kg−1). The observed entropy change is comparable to the largest changes reported in inorganic solid materials, and more importantly, it is utilized through a colossal barocaloric effect. The adiabatic temperature change by applying 5.1 kbar pressure is estimated to reach 13.7 K, which means efficient refrigeration can be realized through this effect.  相似文献   
84.
The dispersion slope of a dispersion-shifted fibre has been successfully equalised by using a bend-induced positive dispersion slope in a singlemode fibre. We realised the bent fibre dispersion slope equaliser by using a 1.3 μm zero-dispersion pure silica core fibre (PSM). This equaliser provides a dispersion slope of -12.54 ps/nm2 /km in the 1.5 μm region  相似文献   
85.
Specifications for a spaceborne rain radar for tropical rainfall measurement are described. A spaceborne rain radar has problems peculiar to rain observation from space. The radar must have a fast scanning mechanism to cover a large swath. Very weak rain echoes compared to the sea or land surface signal must be detected. These capabilities must be attained under the severe power consumption and mass limitations of the satellite bus. The fast scanning requirement forces application of an electrically scanning mechanism. This requirement also causes a severe limitation of the available number of independent samples. The requirement for weak rain echoes excludes application of the pulse compression technique, which is a very conventional technique for other active microwave sensors on board satellites. Under these constraints, a rain radar with an electrically scanning planar antenna at 13-8 GHz is proposed.  相似文献   
86.
Recently Victor Shoup noted that there is a gap in the widely believed security result of OAEP against adaptive chosen-ciphertext attacks. Moreover, he showed that, presumably, OAEP cannot be proven secure from the one-wayness of the underlying trapdoor permutation. This paper establishes another result on the security of OAEP. It proves that OAEP offers semantic security against adaptive chosen-ciphertext attacks, in the random oracle model, under the partial-domain one-wayness of the underlying permutation. Therefore, this uses a formally stronger assumption. Nevertheless, since partial-domain one-wayness of the RSA function is equivalent to its (full-domain) onewayness, it follows that the security of RSA-OAEP can actually be proven under the sole RSA assumption, although the reduction is not tight.  相似文献   
87.
A series of compounds from the tetraceno[2,3‐b]thiophene and the anthra[2,3‐b]thiophene family of semiconducting molecules has been made. Specifically, synthetic routes to functionalize the parent molecules with bromo and then hexyl groups are shown. The bromo‐ and hexyl‐functionalized tetraceno[2,3‐b]thiophene and anthra[2,3‐b]thiophene were characterized in the top‐contact thin‐film transistor (TFT) geometry. They give high mobilities, ranging from 0.12 cm2 V?1 s?1 for αn‐hexylanthra[2,3‐ b]thiophene to as high as 0.85 cm2 V?1 s?1 for α‐bromotetraceno[2,3‐b]thiophene. Notably, grain size increases, going from the shorter anthra[2,3‐b]thiophene core to the longer tetraceno[2,3‐b]thiophene core, with a corresponding increase in mobility. The transition from undesirable 3D to desirable 2D thin‐film growth is explained by the increase in length of the molecule, in this case by one benzene ring, which results in an increase in intralayer interactions relative to interlayer interactions.  相似文献   
88.
The authors present a method by which to construct a fast N*N self-routing space switch network with identical 2*2 switch elements. This network is nonblocking and employs O(N log/sup 3/ N) switch elements; each element uses just two bits of the output port address for switching control.<>  相似文献   
89.
This paper presents a generic conversion from weak asymmetric and symmetric encryption schemes to an asymmetric encryption scheme that is chosen-ciphertext secure in the random oracle model. Our conversion is the first generic transformation from an arbitrary one-way asymmetric encryption scheme to a chosen-ciphertext secure asymmetric encryption scheme in the random oracle model.  相似文献   
90.
The chemical bonding states and electrical characteristics of SrO capped La2O3/CeOx gate dielectric have been examined. Angle-resolved X-ray photoelectron spectroscopy measurement has revealed that Sr atoms diffuse into silicate layer to form SrLa-silicate after annealing. Owing to the incorporation of Sr atoms into silicate layer, a transistor operation with an equivalent oxide thickness (EOT) below 0.5 nm has been demonstrated. A strongly degraded effective electron mobility of 78 cm2/V s at 1 MV/cm has been obtained, which fit well with the general trend in small EOT range below 1 nm. Although process optimization is needed to improve the performance of transistors, Sr capping technique can be useful for EOT scaling.  相似文献   
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