Dirac Cone Spin Polarization of Graphene by Magnetic Insulator Proximity Effect Probed with Outermost Surface Spin Spectroscopy

The effects of the proximity contact with magnetic insulator on the spin‐dependent electronic structure of graphene are explored for the heterostructure of single‐layer graphene (SLG) and yttrium iron garnet Y₃Fe₅O₁₂ (YIG) by means of outermost surface spin spectroscopy using a spin‐polarized metastable He atom beam. In the SLG/YIG heterostructure, the Dirac cone electrons of graphene are found to be negatively spin polarized in parallel to the minority spins of YIG with a large polarization degree, without giving rise to significant changes in the π band structure. Theoretical calculations reveal the electrostatic interfacial interactions providing a strong physical adhesion and the indirect exchange interaction causing the spin polarization of SLG at the interface with YIG. The Hall device of the SLG/YIG heterostructure exhibits a nonlinear Hall resistance attributable to the anomalous Hall effect, implying the extrinsic spin–orbit interactions as another manifestation of the proximity effect.     

Photosensitivity in low-loss perfluoropolymer (CYTOP) fibrematerial

Photosensitivity in a perfluoropolymer (CYTOP) optical fibre is investigated. Significant diffraction has been observed from transmission gratings made from the fibre. A maximum diffraction efficiency of 1.6% has been achieved, corresponding to an index change ≃3×10^-4. The study demonstrates for the first time the existence of significant photosensitivity and the feasibility of writing a Bragg grating in a CYTOP fibre     

Generation control circuit for photovoltaic modules

Photovoltaic modules must generally be connected in series in order to produce the voltage required to efficiently drive an inverter. However, if even a very small part of photovoltaic module (PV module) is prevented from receiving light, the generation power of the PV module is decreased disproportionately. This greater than expected decrease occurs because PV modules which do not receive adequate light cannot operate on the normal operating point, but rather operate as loads. As a result, the total power from the PV modules is decreased if even only a small part of the PV modules are shaded. In the present paper, a novel circuit, referred to as the generation control circuit (GCC), which enables maximum power to be obtained from all of the PV modules even if some of the modules are prevented from receiving light. The proposed circuit enables the individual PV modules to operate effectively at the maximum power point tracking, irrespective of the series connected PV module system. In addition, the total generated power is shown experimentally to increase for the experimental set-up used in the present study     

Wide-wavelength tunable lasers with 100 ghz fsr ring resonators

A widely tunable laser, consisting of a 100 GHz FSR triple-ring resonator and a semiconductor optical amplifier, is presented. The 100 GHz FSR ring resonator makes it possible to demonstrate 96 nm wavelength tuning with stable single-mode operation produced by a large threshold gain difference     

An all-digital analog-to-digital converter with 12-/spl mu/V/LSB using moving-average filtering

A compact, high-resolution analog-to-digital converter (ADC) especially for sensors is presented. The basic structure is a completely digital circuit including a ring-delay-line with delay units (DUs), along with a frequency counter, latch, and encoder. The operating principles are: (1) the delay time of the DU is modulated by the analog-to-digital (A/D) conversion voltage and (2) the delay pulse passes through a number of DUs within a sampling (= integration) time and the number of DUs through which the delay pulse passes is output as conversion data. Compact size and high resolution were realized with an ADC having a circuit area of 0.45 mm/sup 2/ (0.8-/spl mu/m CMOS) and a resolution of 12 /spl mu/V (10 kS/s). Its nonlinearity is /spl plusmn/0.1% FS per 200-mV span (1.8-2.0 V), for 14-b resolution. Sample holds are unnecessary and a low-pass filter function removes high-frequency noise simultaneously with A/D conversion. Thus, the combination of this ADC and a digital filter that follows can eliminate an analog prefilter to prevent the aliasing before A/D conversion. Also, both this ADC can be shrunk and operated at low voltages, so it is an ideal means to lower the cost and power consumption. Drift errors can be easily compensated for by digital processing.     

3D Micromolding of Arrayed Waveguide Gratings on Upconversion Luminescent Layers for Flexible Transparent Displays without Mirrors,Electrodes, and Electric Circuits

A new technique for the fabrication of arrayed waveguide gratings on upconversion luminescent layers for flexible transparent displays is reported. Ho³⁺‐ and Yb³⁺‐codoped NaYF₄ nanoparticles are synthesized by hydrothermal techniques. Transparent films consisting of two transparent polymers on the NaYF₄ nanoparticle films exhibit mechanical flexibility and high transparence in visible region. Patterned NaYF₄ nanoparticle films are fabricated by calcination‐free micromolding in capillaries. Arrayed waveguide gratings consisting of the two transparent polymers are formed on the patterned NaYF₄ nanoparticle films by micromolding in capillaries. Green and red luminescence is observed from the upconversion luminescent layers of the NaYF₄ nanoparticle films in the arrayed waveguide gratings under excitation at 980 nm laser light. Arrayed waveguide gratings on the upconversion luminescent layers are fabricated with Er³⁺‐doped NaYF₄ nanoparticles which can convert two photons at 850 and 1500 nm into single photon at 550 nm. These results demonstrate that flexible transparent displays can be fabricated by constructing arrayed waveguide gratings on upconversion luminescent layers, which can operate in nonprojection mode without mirrors, transparent electrodes, and electric circuits.     

A side-wall transfer-transistor cell (SWATT cell) for highlyreliable multi-level NAND EEPROMs

A multi-level NAND Flash memory cell, using a new Side-WAll Transfer-Transistor (SWATT) structure, has been developed for a high performance and low bit cost Flash EEPROM. With the SWATT cell, a relatively wide threshold voltage (V_th) distribution of about 1.1 V is sufficient for a 4-level memory cell in contrast to a narrow 0.6 V distribution that is required for a conventional 4-level NAND cell. The key technology that allows this wide V_th distribution is the Transfer Transistor which is located at the side wall of the Shallow Trench Isolation (STI) region and is connected in parallel with the floating gate transistor. During read, the Transfer Transistors of the unselected cells (connected in series with the selected cell) function as pass transistors. So, even if the V_th of the unselected floating gate transistor is higher than the control gate voltage, the unselected cell will be in the ON state. As a result, the V_th distribution of the floating gate transistor can be wider and the programming can be faster because the number of program/verify cycles can be reduced. Furthermore, the SWATT cell results in a very small cell size of 0.57 μm² for a 0.35 μm rule. Thus, the SWATT cell combines a small cell size with a multi-level scheme to realize a very low bit cost. This paper describes the process technology and the device performance of the SWATT cell, which can be used to realize NAND EEPROM's of 512 Mbit and beyond     

Development of a MAGLEV superconducting magnet for the Yamanashitest line in Japan: vibration characteristics and analysis for design

A high-performance and high-reliability magnetically levitated (MAGLEV) superconducting magnet (SCM) was developed. Its heat generation per unit time by the electromagnetic forces due to the spatially fifth ripple magnetic fields from levitation coils is under 2 W at the frequency range in which vehicles are levitated. The vibration mode of inner vessels that makes the largest contribution to heat generation in SCMs is clarified, the torsion mode. A modeling method to analyze SCM vibration, which considers the effect of the bogie frames of a vehicle, is examined, and heat generation in SCMs is calculated from the vibration of the inner vessel. Using the numerical analysis method, new SCMs combined with new bogie frames for the Yamanashi Test Line are designed. Good performance in vibration and heat generation of these SCMs is predicted by numerical analysis     

A 1.9-GHz Si-bipolar variable attenuator for PHS transmitter

A 4-dB step 28-dB variable attenuator for 1.9 GHz personal handy-phone system (PHS) transmitter was fabricated using silicon bipolar technology with f_T of 15 GHz. Step accuracy within 1.2 dB and total vector modulation error of less than 4% are realized for -15 dBm output. The attenuator consumes 21 mA with 2.7-V power supply and occupies 1.1 mm×0.5 mm