Highly Transparent Lu-α-SiAlON

Novel Lu-α-SiAlON ceramics were produced by hot pressing mixtures of Si₃N₄, Lu₂O₃, AlN, and Al₂O₃ at 1950°C for 2 h in a nitrogen atmosphere. The resultant SiAlON was fully dense and possessed a uniform, equiaxed microstructure with a grain size of ∼1 μm, which resulted in a high hardness of >19 GPa. In addition to high hardness, the sample showed very high optical transparency in the visible light region, with >70% transmission at higher wavelengths. This high transparency was attributed to the uniform, dense microstructure and lack of residual grain-boundary phase.     

Formation and Properties of Ln-Si-O-N Glasses (Ln = Lanthanides or Y)

Homogeneous Y-Si-O-N glasses containing 15 or 20 eq% nitrogen (N) were prepared from compositions with Y/Si ratios in the vicinity of that of the lowest eutectic point on the Y₂O₃–SiO₂ phase diagram. The liquidus on the phase diagram shifted toward lower temperatures by incorporation of N. The density, the elastic moduli, and the glass transition temperature of the Y-Si-O-N glasses increased with incorporation of N. This is due to the closer packing of atoms in the glasses by the substitution of N, which is in three-fold coordination with Si, for O which is in two-fold coordination, and the stronger covalent nature of the Si–N bond compared with the Si–O bond. The coefficient of thermal expansion of the Y-Si-O-N glasses increased with increasing Y content, because the discontinuity of the glass network developed with increasing nonbridging anions by the introduction of Y. In contrast, the glass transition temperature and the elastic moduli increased with Y content due to the high coordination of Y for O, and the relatively high cationic field strength of Y. Furthermore, the effect of cationic field strength on properties of Ln-Si-O-N glasses (Ln = lanthanides or Y) is discussed.     

Processing Strategy for Producing Highly Anisotropic Silicon Nitride

Silicon nitride with a preferred orientation of large elongated grains was obtained by tape casting of raw powder slurry seeded with rodlike β-Si₃N₄ particles, followed by a gas pressure sintering under 1 MPa nitrogen pressure. The large elongated grains developed from seeds lay in planes parallel to the casting direction in a two-dimensional distribution. Increased fracture toughness (11.1 MPa·m^1/2) and bending strength (1100 MPa) were achieved in the direction perpendicular to the grains alignment compared to specimens with a random distribution of elongated grains. Morover, the specimens exhibited a high Weibull modulus of 46 due to the uniform distribution of large grains.     

Mechanical Properties of Textured Alumina Made by High-Temperature Deformation

The mechanical properties of a textured alumina made by high-temperature deformation of normal-purity sintered alumina have been investigated. The textured alumina shows very high bending strength and extremely high fracture toughness. Fracture toughness of more than 10 MPa·m^1/2 was measured by the single-edge precracked beam method, and even using the single-edge V-notched beam method, toughness of over 8 MPa·m^1/2 was obtained. This high fracture toughness was attributed to a large number of aligned small platelike grains of the textured structure enhancing the grain bridging effect.     

Quantitative imaging of Young's modulus of solids: a contact-mechanics study

We developed equipment and methods for measuring quantitatively the local Young's modulus of solids. It consists of an electrodeless langasite oscillator and line antennas, and oscillator vibrations are generated and detected contactlessly. A constant biasing force results from oscillator mass and is independent of surface roughness. The effect of material anisotropy on the measured stiffness is theoretically discussed for studying the limitation of the quantitative measurement. The microscopy has been applied to polycrystalline copper, and the measured modulus is compared to calculations based on electron-backscatter-diffraction measurements. Also, we applied it to a duplex stainless steel and an embedded silicon-carbide fiber. The results reveal textured regions, defects with high sensitivity, and even stiffness distribution in a single grain.     

Effects of phosphorus content on generation and growth of cracks in nickel–phosphorus platings owing to thermal cycling

We observed crack generation and structural changes in electroless nickel–phosphorus (Ni–P) plating layers formed on copper-metalized silicon nitride substrates both during thermal cycling from ? 40 to 250 °C and during storage (not cycling) at 250 °C in order to investigate the effect of the phosphorus contents on crack generation and growth in the Ni–P platings. The used platings contained phosphorus at three different contents: 2.1 wt% [Ni–P(low)], 6.5 wt% [Ni–P(med)], and 10.9 wt% [Ni–P(high)]. The generation time and the amount of cracks were strongly dependent on their phosphorus contents. More cracks appeared after thermal cycling than after storage at 250 °C. In Ni–P(low), cracks were generated after 200 thermal cycles, whereas no cracks were observed even after 250 h of storage at 250 °C. In Ni–P(med) and Ni–P(high), both during thermal cycling and storage at 250 °C, cracks formed during or after crystallization of the amorphous layers. These results suggest that the primary factors affecting the generation of cracks in electroless Ni–P platings are crystallization of the Ni–P platings and repeated changes in thermal stress.     

Effects of calcining conditions of kaolinite on pore structures of mesoporous materials prepared by the selective leaching of calcined kaolinite

This paper describes the effects of calcining conditions of kaolinite on pore structures of the porous materials obtained from the selective leaching of calcined kaolinite using KOH solution. Mesoporous -Al₂O₃ was the predominant crystalline phase in the samples calcined in the temperature range between 950°C and 1050°C for 24 h. The mean specific surface area of these samples was approximately 250 m² · g^–1 and the mean total pore volume was approximately 0.8 ml · g^–1. The pore size distribution curves of these samples showed a sharp peak at around 2–3 nm pore radius. This peak was sharper for the sample calcined at 1000°C for 24 h. On the other hand, the pore sizes of the sample calcined at 1100°C for 24 h increased abruptly to 10–20 nm and this change corresponded to the formation of mullite in the sample. The pore sizes of the samples calcined at 1100°C varied with calcining time. The specific surface area and total pore volume decreased, the longer the calcining time of the samples, and this was correlated with an increase in the amount of mullite in the samples.     

Fracture Resistance Behavior of High‐Thermal‐Conductivity Silicon Nitride Ceramics

Silicon nitride ceramics were prepared from a high‐purity silicon powder doped with 2 mol% Y₂O₃ and 5 mol% MgO as sintering additives via a route of sintering of reaction‐bonded silicon nitride (SRBSN). The materials sintered at 1900°C for 3, 6, 12, and 24 h had thermal conductivities of 109, 125, 146, and 154 W/m/K, and four‐point bending strengths of 786, 676, 608, and 505 MPa, respectively. The fracture toughness values, determined by the single‐edge‐precracked‐beam (SEPB) method, were 8.4, 8.6, 9.7, and 10.7 MPa m^1/2 for the materials sintered for 3, 6, 12, and 24 h, respectively, which were similar to the results measured by the chevron‐notched‐beam (CNB) test method. The materials sintered for longer times (12 and 24 h) showed stronger R‐curve behaviors over longer range of crack extension, in comparison with the materials sintered for shorter times (3 and 6 h).     

Transient current mapping obtained from silicon photodiodes using focused ion microbeams with several hundreds of MeV

Single Event Effects (SEEs) triggered by energetic heavy ions traversing a sensitive parts of electric devices have been studied using high-energy heavy ion microbeams connected with Transient Ion Beam Induced Current (TIBIC) measuring system at the Japan Atomic Energy Agency (JAEA) Takasaki Ion Accelerators for Advanced Radiation Applications (TIARA) facility. In the TIBIC system, SEE for semiconductor device, that is fast charge collection, has been observed in timescales of the order of picoseconds. In this paper, we show successful demonstration of the performance of the system, in which clear images of TIBIC map have been observed for Si pin photodiodes irradiated by 260 MeV ²⁰Ne⁷⁺ and also by 520 MeV ⁴⁰Ar¹⁴⁺ microbeams.     

Combustion synthesis of LaSi3N5:Eu2+ phosphor powders

LaSi₃N₅:Eu²⁺ phosphor powders were prepared by a highly efficient combustion synthesis method. It was found that the compositions of the raw powder mixtures had great influences on the phase compositions and particle morphologies of the synthesized powders. By selecting appropriate starting compositions and combustion parameters, single phase LaSi₃N₅:Eu²⁺ phosphors could be synthesized. When excited by a UV light, the LaSi₃N₅:Eu²⁺ phosphors emitted green light. The wavelength and intensity of the emission spectra were affected by the amount of Eu²⁺ dopant. With increasing amount of Eu²⁺ dopant, concentration quenching could occur and emission spectra shifted to longer wavelengths.