Patterns of knowledge production: The case of information and telecommunication sector in Korea

In recent years, the topic of knowledge production has been widely investigated in the advanced countries. However, the process by which knowledge is produced in the developing countries has not been fully explored or characterized. In Korea, the science and engineering fields strongly reflect systems of knowledge production in the universities and demonstrate the dynamics of systems of innovation for knowledge production. Through using a case study including data for knowledge production, in the field of information and telecommunication, the following general trends were observed. Firstly, there has been a trend towards increasing the capabilities for knowledge production, via domestic and foreign collaboration. Secondly, there has been an increasing trend towards the diversification of knowledge sources such as university-industry, and university-public research institutes. Finally, the establishment of a nation's knowledge base is influenced by governmental research and development policies. This revised version was published online in August 2006 with corrections to the Cover Date.     

Deactivation of copper-ion-exchanged hydrogen-mordenite-type zeolite catalyst by SO2 for no reduction by NH3

Deactivation of copper-ion-exchanged hydrogen-mordenite-type zeolite catalyst by SO₂ for NO reduction by NH₃ was examined in a fixed-bed flow reactor. The deactivation of the catalyst was strongly dependent on reaction temperature. At high reaction temperatures over 300°C, the catalyst did not lose its initial activity up to 50 h of operation, regardless of SO₂ feed concentration from 500 to 20,000 ppm. However, at low reaction temperatures near 250°C, apparent deactivation did occur. Changes in the physicochemical properties such as surface area and sulfur content of deactivated catalyst well correlated with catalyst activity, depending upon reaction temperatures. The deactivation was due to pore blocking and/or filling by deactivating agents, which plugged and/or filled the pores of catalyst. The deactivating agents deposited on the catalyst surface were presumed to be (NH₄)₂SO₄ and/or (NH₄)HSO₄ from the results of TGA and ion-chromatography measurement.     

Fatigue growth of multiple-cracks near a row of fastener-holes in a fuselage lap-joint

The fatigue growth of multiple cracks, of arbitrary lengths, emanating from a row of fastener holes in a bonded, riveted, lap joint in a pressurized aircraft fuselage is studied. The effects of residual stresses due to a rivet misfit, and of plastic deformation near the hole, are included. A Schwartz-Neumann alternating method which uses the analytical solution for a row of multiple colinear cracks in an infinite sheet (the crack-faces being subject to arbitrary tractions), is developed to analyze this MSD problem on a personal computer. It is found that for a range of crack lengths, a phenomena wherein the shorter cracks may grow faster than longer cracks may exist.     

Effects of α‐form or β‐form nuclei on polymorphic crystalline morphology of poly(butylene adipate)

The effects of α‐form and β‐form nuclei on polymorphic morphology of poly(butylene adipate) (PBA) upon recrystallization from the molten state up to various T_max values were examined by differential scanning calorimetry (DSC), wide‐angle X‐ray diffraction (WAXD) and polarized light microscopy (PLM). In this study, PBA with complex melting and polymorphism behaviour was used as a model for examining different types and extents of residual nuclei. As the PBA initially containing the sole α‐crystal was brought to a molten state of various T_max, the extents of trace α‐form crystal nuclei varied and were dependent on T_max. Furthermore, it did not matter whether, initially, the PBA contained α‐ or β‐form crystals (or both) because only a single type of α‐nuclei could be left upon treatment to the molten liquid state at T_max. Therefore, only the α‐crystal in PBA had ‘memory capacity’ in the molten liquid state while the β‐crystal did not. This was so because the latter had been completely transformed into the solid state prior to being heated into a liquid. PBA crystallized before α‐nuclei could be packed into α‐crystal, regardless of the crystallization temperature (T_c). For recrystallization from molten PBA without any nuclei, the crystalline polymorphism was correspondingly influenced by T_c. Copyright © 2005 Society of Chemical Industry     

Microwave induced plasma processing of nuclear waste calcines

Microwave induced plasma processing was used to sinter synthetic Idaho Chemical Processing Plant (ICPP) alumina and zirconia based high level nuclear waste calcines in a nitrogen atmosphere. The microwave densification behaviour of these nuclear waste calcines was observed parallel with identification of the phases formed after sintering. Sintered densities of > 3.20 g cm^–3 were obtained within 10 min of microwave sintering of pure calcines. Glass frit containing calcines showed lower sintering densities (< 2.0 g cm^–3) due to reactions between the frit and volatile substances in both zirconia based and alumina based calcines; prior removal of frit volatiles increased the sintered density. Phases formed in the microwave sintered calcines were identified by X-ray diffraction.     

Semiconductor optical amplifier for CWDM operating over 1540-1620 nm

A semiconductor optical amplifier was developed for coarse wavelength-division-multiplexing (CWDM) operating over 1540-1620 nm (C-L band). A unique quantum-well structure was designed to meet the requirements for the CWDM operation such as wide bandwidth, low polarization-dependent gain, and high-saturation power at the short wavelength end of the band (1540 nm). Over the band, 24-dB maximum chip gain was obtained with less than 4.3-dB gain flatness and more than 14.6-dBm saturation power.     

Monolithically integrated four-channel receiver array using diffused InGaAs (JFET technology)

Four-channel receiver arrays have been fabricated by monolithically integrating diffused InGaAs JFET-based electronics with InGaAs pin photodiodes. Cascode and simple inverter transimpedance amplifier circuits have been produced, both of which use a micro-FET as a tunable feedback element to vary bandwidth between 20 and 800 MHz. A sensitivity of -28.2 dBm was achieved at 1.25 Gbit/s with crosstalk between adjacent channels of -50 dB (electrical).<>