高非线性石英基光子晶体光纤产生宽带可调中红外孤子的实验研究

通过研究发现双包层结构能降低石英基光子晶体光纤损耗,并制备一种高非线性双包层结构石英基光子晶体光纤来进行实验研究.使用钛宝石飞秒激光器将实验室自制的石英基光子晶体光纤在反常色散区泵浦,研究不同的泵浦功率和泵浦波长对中红外超短脉冲孤子的影响,并分析了石英基高非线性光子晶体光纤中红外超短脉冲孤子产生的物理机理.结合实验发现在泵浦功率为827 nm,功率从0.1 W增加到0.42 W时,中红外第一个孤子随功率增加从1933 nm移动到2403 nm,可调范围达到470 nm,为石英基光子晶体光纤产生宽带可调超短脉冲源创造了很好的条件.     

A low-power RF integrated circuit for implantable sensors

A low-power low-voltage analog signal processing circuit has been designed, fabricated, and tested. The circuit is capable of processing an analog sensor current and producing an ASK modulated digital signal with modulating signal frequency proportional to the sensor current level. An on-chip regulator has been included to stabilize the supply voltage received from an external RF power source. The circuit can operate with a power supply as low as 1 V and consumes only about 20 μW of power, which is therefore very suitable for implantable biomedical applications. The whole chip was laid out and fabricated in a 0.35 μm bulk CMOS technology. Experimental results show good agreement with the simulation results.     

Metal-defined polymeric variable optical attenuator

A variable optical attenuator (VOA) based on a metal-defined polymeric optical waveguide has been demonstrated for the first time. The metal film stressor deposited on top of the upper cladding layer not only produces the refractive index change within the core layer, but also acts as a thin-film heater allowing thermal tuning of the optical power within a metal-defined optical waveguide. Fabricated devices exhibit greater than 25 dB of optical attenuation with an applied electrical current of /spl sim/40 mA at 1550-nm wavelength. The switching speed of the VOA exhibits 800 /spl mu/s of rising and 720 /spl mu/s of falling time.     

Engineering a Nanoscale Al‐MOF‐Armored Antigen Carried by a “Trojan Horse”‐Like Platform for Oral Vaccination to Induce Potent and Long‐Lasting Immunity

Vaccination via the oral administration of an antigen faces many challenges, including gastrointestinal (GI) proteolysis and mucosal barriers. To limit GI proteolysis, a biomimetically mineralized aluminum‐based metal–organic framework (Al‐MOF) system that is resistant to ambient temperature and pH and can act synergistically as a delivery vehicle and an adjuvant is synthesized over a model antigen ovalbumin (OVA) to act as armor. To overcome mucosal barriers, a yeast‐derived capsule is used to carry the Al‐MOF‐armored OVA as a “Trojan Horse”‐like transport platform. In vitro experiments reveal that the mineralization of Al‐MOFs forms an armor on OVA that protects against highly acidic and degradative GI conditions. However, the mineralized Al‐MOFs can gradually disintegrate in a phosphate ion‐containing simulated intracellular fluid, slowly releasing their encapsulated OVA. In vivo studies reveal that the “Trojan Horse”‐like transport platform specifically targets intestinal M cells, favoring the transepithelial transport of the Al‐MOF‐armored OVA, followed by subsequent endocytosis in local macrophages, ultimately accumulating in mesenteric lymph nodes, yielding long‐lasting, high‐levels of mucosal S‐IgA and serum IgG antibodies. Such an engineered delivery platform may represent a promising strategy for the oral administration of prophylactic or therapeutic antigens for vaccination.     

Rear‐Passivated Ultrathin Cu(In,Ga)Se2 Films by Al2O3 Nanostructures Using Glancing Angle Deposition Toward Photovoltaic Devices with Enhanced Efficiency

In this work, for the first time, the addition of aluminum oxide nanostructures (Al₂O₃ NSs) grown by glancing angle deposition (GLAD) is investigated on an ultrathin Cu(In,Ga)Se₂ device (400 nm) fabricated using a sequential process, i.e., post‐selenization of the metallic precursor layer. The most striking observation to emerge from this study is the alleviation of phase separation after adding the Al₂O₃ NSs with improved Se diffusion into the non‐uniformed metallic precursor due to the surface roughness resulting from the Al₂O₃ NSs. In addition, the raised Na concentration at the rear surface can be attributed to the increased diffusion of Na ion facilitated by Al₂O₃ NSs. The coverage and thickness of the Al₂O₃ NSs significantly affects the cell performance because of an increase in shunt resistance associated with the formation of Na₂Se_X and phase separation. The passivation effect attributed to the Al₂O₃ NSs is well studied using the bias‐EQE measurement and J–V characteristics under dark and illuminated conditions. With the optimization of the Al₂O₃ NSs, the remarkable enhancement in the cell performance occurs, exhibiting a power conversion efficiency increase from 2.83% to 5.33%, demonstrating a promising method for improving ultrathin Cu(In,Ga)Se₂ devices, and providing significant opportunities for further applications.     

Morphological Stabilization by Supramolecular Perfluorophenyl‐C60 Interactions Leading to Efficient and Thermally Stable Organic Photovoltaics

A new PC₆₁BM‐based fullerene, [6,6]‐phenyl‐C₆₁ butyric acid pentafluorophenyl ester (PC₆₁BP^F) is designed and synthesized. This new n‐type material can replace PC₆₁BM to form a P3HT:PC₆₁BP^F binary blend or serve as an additive to form a P3HT:PC₆₁BM:PC₆₁BP^F ternary blend. Supramolecular attraction between the pentafluorophenyl group of PC₆₁BP^F and the C₆₀ cores of PC₆₁BP^F/PC₆₁BM can effectively suppress the PC₆₁BP^F/PC₆₁BM materials from severe aggregation. By doping only 8.3 wt% PC₆₁BP^F, device PC₆₁BP^F651 exhibits a PCE of 3.88% and decreases slightly to 3.68% after heating for 25 h, preserving 95% of its original value. When PC₆₁BP with non‐fluorinated phenyl group is used to substitute PC₆₁BP^F, the stabilizing ability disappears completely. The efficiencies of PC₆₁BP651 and PC₆₁BP321 devices significantly decay to 0.44% and 0.11%, respectively, after 25 h isothermal heating. Most significantly, this strategy is demonstrated to be effective for a blend system incorporating a low band‐gap polymer. By adding only 10 wt% PC₆₁BP^F, the PDTBCDTB: PC₇₁BM‐based device exhibits thermally stable morphology and device characteristics. These findings demonstrate that smart utilization of supramolecular interactions is an effective and practical strategy to control morphological evolution.     

Fluorene‐Based Asymmetric Bipolar Universal Hosts for White Organic Light Emitting Devices

Two new bipolar host molecules composed of hole‐transporting carbazole and electron‐transporting cyano ( CzFCN ) or oxadiazole ( CzFOxa )‐substituted fluorenes are synthesized and characterized. The non‐conjugated connections, via an sp³‐hybridized carbon, effectively block the electronic interactions between electron‐donating and ‐accepting moieties, giving CzFCN and CzFOxa bipolar charge transport features with balanced mobilities (10^?5 to 10^?6 cm² V^?1 s^?1). The meta–meta configuration of the fluorene‐based acceptors allows the bipolar hosts to retain relatively high triplet energies [E_T = 2.70 eV ( CzFOxa ) and 2. 86 eV ( CzFCN )], which are sufficiently high for hosting blue phosphor. Using a common device structure – ITO/PEDOT:PSS/DTAF/TCTA/host:10% dopants (from blue to red)/DPPS/LiF/Al – highly efficient electrophosphorescent devices are successfully achieved. CzFCN ‐based devices demonstrate better performance characteristics, with maximum η_ext of 15.1%, 17.9%, 17.4%, 18%, and 20% for blue (FIrpic), green [(PPy)₂Ir(acac)], yellowish‐green [m‐(Tpm)₂Ir(acac)], yellow [(Bt)₂Ir(acac)], and red [Os(bpftz)₂(PPhMe₂)₂, OS1], respectively. In addition, combining yellowish‐green m‐(Tpm)₂Ir(acac) with a blue emitter (FIrpic) and a red emitter (OS1) within a single emitting layer hosted by bipolar CzFCN , three‐color electrophosphorescent WOLEDs with high efficiencies (17.3%, 33.4 cd A^?1, 30 lm W ^?1), high color stability, and high color‐rendering index (CRI) of 89.7 can also be realized.     

High performance analog VLSI computational circuits

Simple linear voltage/current-controlled voltage-to-current (V-T) converters, which are to first-order insensitive to the threshold voltage variation, are introduced. The circuits can be used as basic building blocks to construct simple analog computational circuits, which can perform functions such as square rooting, squaring, multiplication, sum of squares, difference of squares, etc. Some of the key features are: good linearity, floating inputs [high common-mode rejection ratio (CMRR)], simplicity, and good transconductance tuning range. The circuits can be realized with CMOS devices in saturation, however, BiCMOS devices extend their speed and input voltage range. Realistic simulations and experimental results clearly demonstrate the claims     

Viscous dissipation effect on entropy generation for non-Newtonian fluids in microchannels

An analytical study on the viscous dissipation effect on entropy generation in fully developed forced convection for single phase non-Newtonian fluid flow in circular microchannels is reported. In the first-law analysis, closed form solutions of the temperature distributions in the radial direction for the models with and without viscous dissipation term in the energy equation are obtained. In the second-law analysis, the two models are compared by analyzing their relative deviations in dimensionless entropy generation and Bejan number for different Brinkman number and power-law index. The findings show that under certain conditions the viscous dissipation effect on entropy generation in microchannels is significant and should not be neglected.     

The interfacial reaction between Sn-Zn-Ag-Ga-Al solders and metallized Cu substrates

The interfacial interaction between the Sn-8.55Zn-0.5Ag-0.5Ga-0.1Al solder and three kinds of metallized substrates (Cu, Cu/Au, and Cu/Ni-P/Au) does not form the Cu-Sn intermetallic compound (IMC). Continuous Cu-Zn and discontinuous Ag-Zn interfacial IMC layers formed between the Cu and Sn-Zn-Ag-Ga-Al solder, while Cu-Zn and Au-Al-Zn IMCs formed on the Cu/Au substrate. Only the Au-Al-Zn IMC formed at the interface when the electroless Ni-P deposit was the diffusion barrier between Cu and the Au surface layer.