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91.
The interfacial stress intensity factors for three types of sandwich specimens: the single edge crack tensile specimen, the three point bend specimen and the four point shear specimen were obtained by the finite element analysis and compared with the asymptotic solutions. The results show that the geometric effect for mode II specimen is larger than mode I specimen. The limit curves for geometry factor equal to 1.05 were obtained to indicate the usable range of validity of the asymptotic solution. 相似文献
92.
G Charpentier S Belloncik G Ducros D Fontenille L Tian JM Quiot 《Canadian Metallurgical Quarterly》1995,32(6):793-800
The objectives of this study were to develop sex-, age-, and body size-specific nomograms and partition values for upper and lower limits of M-mode echocardiographic aortic root measurements derived from a large population-based cohort. The study sample consisted of 1433 male and 1816 female participants in the Framingham Heart Study and Framingham Offspring Study who were normotensive and free of clinically apparent heart disease at the baseline examination. Aortic root measurements were obtained by M-mode echocardiography by a leading-edge to leading-edge technique. The relations of age and measures of body size with aortic root dimensions were evaluated with sex-specific correlations and multiple stepwise linear regression analyses. Age was the most important determinant of aortic root size in both men and women in the multivariable regression models. Models with age and body surface area yielded R2 values of 0.214 in men and 0.222 in women. Models with age and height yielded lower R2 values of 0.136 in men and 0.181 in women. Thus aortic root dimensions vary widely with the age, sex, and body size of individuals. Sex-specific reference nomograms of aortic root dimensions in relation to age and body size (body surface area or height) are presented to facilitate the detection of abnormalities of aortic root size. 相似文献
93.
94.
By means of X-ray diffraction and adiabatic scanning calorimeter,the specific heatsof five compounds in the Sm_2O_3-BaO--CuO system,such as Sm_2BaO_4,Sm_2CuO_4,BaCuO_4,Sm_2BaCuO_5,SmBa_2Cu_3O_(7-x),from -150℃ to 800℃ have been measured.It is found that the specific heats ofthese compounds increase smoothly with the increase of temperature. 相似文献
95.
96.
本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件,制备了优质非晶氮化硅薄膜,其介电常数为7.5、击穿强度为5.5MV/cm、电导率为10-13(Ωcm)-1。 相似文献
97.
厚膜导体Pd-Ag/Au、Pt-Pd-Au/Au平面复合结构,Pd-Ag/Au立体复合结构可使多种组装技术相互兼容。立体复合结构还可有效地降低导体线电阻,减少线损耗。而且,其超声键合性尤佳 相似文献
98.
田希泰 《石油地球物理勘探》1991,(1)
在地震资料处理中常常发现野外观测系统不准,其后果极为严重。为了避免重复施工,改善处理效果,笔者在IBM3081系统上编制了利用初至波对野外观测系统进行检验和校正的程序。文中介绍了两种校正方法:其一是只作炮检距校正。根据工区的小折射、井口时间、反射记录等资料提供一条或几条比较准确的初至时距曲线,作为标准曲线,然后将从实际共炮点道集中拾取的初至曲线与标准初至时距曲线相比较,确定出实际初至曲线所对应的炮检距,并对各个地震道的空间属性进行修改。对某三维工区的处理结果表明,该方法的效果良好。其二是先用迭代方法加误差约束条件计算炮点和检波点的坐标,然后计算炮检距,再进行校正。这种校正处理的效果也是明显的。但实验表明,对于观测系统误差较大的数据,不宜作坐标计算,只作炮检距校正尚可完成部分校正。处理中要根据数据的性质选取校正方法。 相似文献
99.
A new model for simulating temporal fluctuations in the power emitted by a semiconductor laser is described. Light in the cavity is assumed to circulate in the form of traveling photon packets, in which the photon number fluctuates due to the processes of spontaneous emission, stimulated emission, absorption, scattering, and reflection. The dipole dephasing time T plays a critical role in modeling the interaction of the photon packets and gain medium. The Monte Carlo method is used to simulate the temporal behavior of a continuously pumped Fabry-Perot laser. The laser output power is found to exhibit periodic fluctuations at the cavity transit time frequency (longitudinal mode beat frequency). The amplitude of these fluctuations, as well as the relaxation oscillation, which occurs at a much lower frequency, is strongly influenced by the magnitude of T . The results of these simulations are related to the temporal behavior expected from a conventional FP laser 相似文献
100.
In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p2-Ga0.8In0.2As0.19Sb0.81/p1-Ga0.9In0.1As0.09Sb0.91 and N1-GaSb/n2-Ga0.9In0.1As0.09Sb0.91/p-Ga0.8In0.2As0.19Sb0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga0.8In0.2As0.19Sb0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N1-n2-p structure is more sensitive than that with the p1-side surface recombination velocity for the N-p2-p1 structure. In the N-p2-p1 structure with the incident light from the p1-side surface, two-color detection is achieved. 相似文献