美讯智内容安全防御全面升级

针对日益突出的内容安全问题,SurfControl美讯智公司日前发布了一系列措施:—针对传统旗舰产品,RiskFilter实现全面大升级至5.0版。—推出全新架构的反间谍软件解决方案:企业安全盾(EnterpriseThreatShield,ETS)。—针对中小用户上网行为管理的需要,推出SurfControlWebFilterSm     

MULTICARRIER DS—CDMA WITH ADAPTIVE MODULATION AND POWER ALLOCATION

Adaptive modulation and power allocation is introduced into the multicarrier DSCDMA system to improve the system performance and bandwidth efficiency.First,the system design appropriate for adaptive modulation and power allocation is given,then the algorithm of adaptive modulation and power allocation is applied.Simulation results demonstrate great performance improvement compared with the fixed modulated one.     

Exchange-correlation errors at harmonic and anharmonic orders: the case of bulk Cu

As an aid towards improving the treatment of exchange and correlation effects in electronic structure calculations, it is desirable to have a clear picture of the errors introduced by currently popular approximate exchange-correlation functionals. We have performed ab initio density functional theory and density functional perturbation theory calculations to investigate the thermal properties of bulk Cu, using both the local density approximation (LDA) and the generalized gradient approximation (GGA). Thermal effects are treated within the quasiharmonic approximation. We find that the LDA and GGA errors for anharmonic quantities are an order of magnitude smaller than for harmonic quantities; we argue that this might be a general feature. We also obtain much closer agreement with experiment than earlier, more approximate calculations.     

Electronic properties of magnetically doped nanotubes

Effect of doping of carbon nanotubes by magnetic transition metal atoms has been considered in this paper. In the case of semiconducting tubes, it was found that the system has zero magnetization, whereas in metallic tubes the valence electrons of the tube screen the magnetization of the dopants: the coupling to the tube is usually antiferromagnetic (except for Cr).     

橡胶促进剂DM的合成工艺

M氧化生成DM是自由基反应机理，结合微反应器机理，采用分子氧化的反应方式，选用绿色溶剂异丙醇、环境友好型氧化剂H202，一步法制取高品质DM。对反应时间、反应温度、氧化剂用量等因素进行考察，确定最佳工艺条件为：反应时间90min，反应温度55℃，氧化剂不过量，碱过量5％，M—Na溶液M含量30％，加料时N60 min，溶剂用量为M—Na溶液质量的1．5倍，所得产品质量合格，熔点可达180℃。     

论述人工成孔灌筑桩的施工程序及技术要求

地基浅层土质不良，采用人工处理将增加成本并工期延长，经过科学论证采用桩基，能满足建筑物所需承载力及变形两方面的要求，另外从造价便宜、环境污染少、无噪声、施工设备简单等各个方面综合，人工成孔灌筑桩不但能满足上述条件，而且，质量易于保证，故人工成孔灌筑桩的施工方法值得推广。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

小型月球探测器高精度姿态指向控制

针对小型月球探测器三轴姿态高指向精度和高稳定度的要求 ,采用欧拉动力学和四元数方法描述 ,建立了小型月球探测器环月阶段动力学模型 ,分析了由 3个轻型反作用轮正交安装组成的姿态稳定控制系统 ,给出了一种拟PD姿态指向控制规律。对所设计的指向控制律进行了数学仿真 ,结果表明可达到 0 .0 1°/s的稳定度和 0 .3°的指向精度 ,验证了该控制规律的可行性。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.