Weaknesses and improvements of the Yoon–Ryu–Yoo remote user authentication scheme using smart cards

Remote user authentication scheme is a procedure which allows a server to authenticate a remote user through insecure channel. Recently, Yoon, Ryu and Yoo made an enhancement based on Ku–Chen’s remote user authentication scheme by using smart cards. The scheme has the merits of providing mutual authentication, no verification table, freely choosing password, involving only few hashing operations and parallel session attack resistance. In this paper, we point out security flaws of Yoon–Ryu–Yoo’s protocols against masquerading attack, off-line password guessing attacks and parallel session attack. An improvement to enhance Yoon–Ryu–Yoo’s security scheme is proposed.     

A graph-theoretic model for optimizing queries involving methods

Traditional algorithms for optimizing the execution order of joins are no more valid when selections and projections involve methods and become very expensive operations. Selections and projections could be even more costly than joins such that they are pulled above joins, rather than pushed down in a query tree. In this paper, we take a fundamental look at how to approach query optimization from a top-down design perspective, rather than trying to force one model to fit into another. We present a graph model which is designed to characterize execution plans. Each edge and each vertex of the graph is assigned a weight to model execution plans. We also design algorithms that use these weights to optimize the execution order of operations. A cost model of these algorithms is developed. Experiments are conducted on the basis of this cost model. The results show that our algorithms are superior to similar work proposed in the literature. Received 20 April 1999 / Accepted 9 August 2000 Published online 20 April 2001     

Synthesis of bio-functionalized copolymer particles bearing carboxyl groups via a microfluidic device

Monodisperse copolymer particles carrying surface carboxyl groups in the range of 50–200 μm were prepared by in situ UV polymerization of ethyleneglycol dimethacrylate (EGDMA) with acrylic acid (AA) via a microfluidic flow-focusing device (MFFD). The design of the coaxial orifices in the MFFD enables the confinement of the comonomer liquid thread to the central axis of the microchannel, which can avoid the wetting problem of comonomer liquid with the microchannel and can successfully produce monodisperse copolymer microspheres with coefficient of variance below 5%. The effects of concentration of EGDMA and AA on droplet diameters and the distribution of carboxyl group on particle surfaces were examined. It has been found that, increasing the concentration of AA would decrease particle sizes, but increase the distribution of carboxyl group on particle surfaces. Bioconjugation of the carboxylated copolymer particles with the anti-rabbit IgG–Cy3 conjugates was successfully demonstrated. By increasing the concentration of AA accompanied with decreasing the particle sizes, high efficiency of bioconjugation on carboxylated copolymer particles was achieved. The rapid continuous synthesis of carboxylated copolymer particles via a microfluidic device provides a reliable control of particle sizes and composition for massive production in biotechnological applications.     

A resource broker with an efficient network information model on grid environments

This paper describes a resource broker whose main function is to match available resources to user needs. The resource broker provides a uniform interface for accessing available and appropriate resources via user credentials. We also focus on providing approximate measurement models for network-related information using NWS for future scheduling and benchmarking. We first propose a network measurement model for gathering network-related information (including bandwidth, latency, forecasting, error rates, etc.) without generating excessive system overhead. Second, we constructed a grid platform using Globus Toolkit that integrates the resources of five schools in Taichung integrated grid environment resources (TIGER). The resource broker runs on top of TIGER. Therefore, it provides security and current information about available resources and serves as a link to the diverse systems available in the Grid.

Optimal design of CMOS pseudoactive pixel sensor (PAPS) structure for low-dark-current and large-array-size imager applications

In this paper, a pixel structure called the optimal pseudoactive pixel sensor (OPAPS) is proposed and analyzed for the applications of CMOS imagers. The shared zero-biased-buffer in the pixel is used to suppress both dark current of photodiode and leakage current of pixel switches by keeping both biases of photodiode and parasitic pn junctions in the pixel bus at zero voltage or near zero voltage. The factor of photocurrent-to-dark-current ratio per pixel area (PDRPA) is defined to characterize the performance of the OPAPS structure. It is found that a zero-biased-buffer shared by four pixels can achieve the highest PDRPA. In addition, the column sampling circuits and output correlated double sampling circuits are also used to suppress fixed-pattern noise, clock feedthrough noise, and channel charge injection. An experimental chip of the proposed OPAPS CMOS imager with the format of 352/spl times/288 (CIF) has been designed and fabricated by using 0.25-/spl mu/m single-poly-five-level-metal (1P5M) N-well CMOS process. In the fabricated CMOS imager, one shared zero-biased-buffer is used for four pixels where the PDRPA is equal to 47.29 /spl mu/m/sup -2/. The fabricated OPAPS CMOS imager has a pixel size of 8.2/spl times/.2 /spl mu/m, fill factor of 42%, and chip size of 3630/spl times/3390 /spl mu/m. Moreover, the measured maximum frame rate is 30 frames/s and the dark current is 82 pA/cm/sup 2/. Additionally, the measured optical dynamic range is 65 dB. It is found that the proposed OPAPS structure has lower dark current and higher optical dynamic range as compared with the active pixel sensor (APS) and the conventional passive pixel sensor (PPS). Thus, the proposed OPAPS structure has high potential for the applications of high-quality and large-array-size CMOS imagers.     

A fault-tolerant wormhole routing scheme for torus networks with nonconvex faults

In this paper, we present a fault-tolerant routing algorithm for torus networks by using only 4 virtual channels. The proposed algorithm is based on the solid fault model, which includes rectangular faults and many practical nonconvex faults. Previous works need at least 6 virtual channels to achieve the same fault-tolerant ability.     

Design, optimization, and performance analysis of new photodiode structures for CMOS active-pixel-sensor (APS) imager applications

The dark current in the active-pixel-sensor (APS) cell of a CMOS imager is known to be mainly generated in the regions of bird's beak after the local oxidation of silicon process as well as the surface damage caused by the implantation of high doping concentration. Furthermore, shallow and deep pn-junctions can improve the photo-sensitivity for light of short and long wavelengths, respectively. In this paper, two new photodiode structures using p-substrate and lightly-doped sensor implant SN- as pn-junction photodiode with the regions of bird's beak embraced by SN- and p-field implants, respectively, are proposed and analyzed to reduce dark current and enhance the overall spectral response. 5 /spl mu/m/spl times/5 /spl mu/m APS cells fabricated in a 0.35-/spl mu/m single-poly-triple-metal (1P3M) 3.3-V CMOS process are designed by using the proposed photodiode structures. As shown from the experimental results, the two proposed photodiode structures of 5 /spl mu/m/spl times/5 /spl mu/m APS cells have lower dark currents of 30.6 mV/s and 35.2 mV/s at the reverse-biased voltage of 2 V and higher spectral response, as compared to the conventional structure and other photodiode structures. Thus, the two proposed new photodiode structures can be applied to CMOS imager systems with small pixel size, high resolution, and high quality.     

Effect of baffle height and Reynolds number on fluid mixing

In this paper, both numerical simulation and experiment were performed to investigate the mixing process within mixing chambers of the planar micromixer with three baffles at varied baffle height. The presence of three baffles causes the flow to separate and creates the recirculation and back flow within mixing chambers. The fluid mixing was greatly influenced by the baffle height and Reynolds number (Re) related to the size of recirculation zone. Larger baffle height or Re produces larger recirculation zone and convective mixing. The micromixer with 350 μm high baffles in 400 μm wide channel results in over 95% mixing at Re = 80 from the simulation results. The experiment results confirm the above simulation results qualitatively. This planar micromixer has the merits of simple design and easy fabrication as compared to the three-dimensional passive micromixers.     

High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200 nm range

High-power broad-area InGaNAs/GaAs quantum-well (QW) edge-emitting lasers on GaAs substrates in the 1200 nm range are reported. The epitaxial layers of the InGaNAs/GaAs QW laser wafers were grown on n⁺-GaAs substrates by using metal-organic chemical vapor deposition (MOCVD). The thickness of the InGaNAs/GaAs QW layers is 70 Å/1200 Å. The indium content (x) of the In_xGa_1−xN_yAs_1−y QW layers is estimated to be 0.35-0.36, while the nitrogen content (y) is estimated to be 0.006-0.009. More indium content (In) and nitrogen content (N) in the InGaNAs QW layer enables the laser emission up to 1300 nm range. The epitaxial layer quality, however, is limited by the strain in the grown layer. The devices were made with different ridge widths from 5 to 50 μm. A very low threshold current density (J_th) of 80 A/cm² has been obtained for the 50 μm × 500 μm LD. A number of InGaNAs/GaAs epi-wafers were made into broad-area LDs. A maximum output power of 95 mW was measured for the broad-area InGaNAs/GaAs QW LDs. The variations in the output powers of the broad-area LDs are mainly due to strain-induced defects the InGaNAs QW layers.