Quantum flux parametron: a single quantum flux device for Josephsonsupercomputer

A quantum flux parametron (QFP), a single quantum flux superconductive device that has a potential of up to 100-GHz switching with nW-order power dissipation, is considered. The potential of the QFP and key technologies when QFPs are applied to a Josephson supercomputer are described. Switching speed, stability, and power dissipation of a QFP are discussed. QFP gates, circuits, and systems are next described. Then, ultra-fast clock distribution using a standing wave is explained. High-speed operation at more than 10 GHz and 10¹⁴ error-free operations per QFP have been demonstrated. Finally described is a high-density packaging scheme by three-dimensional integration, which is very important for ultra-high speed circuits because the propagation delay becomes dominant in such circuits     

Gate length scalability of n-MOSFETs down to 30 nm: Comparisonbetween LDD and non-LDD structures

Gate length scalability of LDD and non-LDD n-MOSFETs are investigated in terms of resistance to short-channel effects. Extremely small gate electrodes are delineated using electron beam direct writing and highly selective dry-etching techniques. An LDD MOSFET with As-implanted 15-nm-deep junctions shows a superior scalability down to 30 nm. In contrast, in the case of a non-LDD MOSFET having Sb-δ-doped 18-nm-deep junctions, the drain induced barrier lowering (DIBL) mechanism limits the minimum gate length to around 80 nm, at which favorable device operation is achieved. The difference between built in potential of source/drain junctions (around 0.1 eV) of LDD and non-LDD devices is found to remarkably affect short channel characteristics in the sub-0.1-μm region     

Initiation and propagation of fretting fatigue cracks

Fretting fatigue tests of a carbon steel were carried out. Fatigue cracks were measured by means of electrical resistance and observed with a scanning electron microscope. The mechanism of fretting fatigue failure is discussed from the experimental results. Small fatigue cracks are initiated early in life and some grow to be propagating cracks. Cracks grow to a given depth by tangential stress combined with repeated stress and then propagate with repeated stress alone, causing a knee point in the propagation curve. Fretting fatigue damage is saturated in the first 20–25 % of life which coincides with the knee point. The condition of non-propagating cracks is also known.     

Multidimensional feedforward compensator for industrial systems through pole assignment regulator and observer

A feedforward-compensator-design technique is presented for industrial control systems. The proposed feedforward compensator can improve dynamic characteristics of multidimensional systems by modifying the input signals. The multidimensional feedforward-compensator design is based on the pole assignment regulator, the minimal-order observer, and the conversion from a closed-loop system to an open-loop system. The effectiveness of the proposed feedforward compensator is demonstrated by a simulation study of temperature control of a thermal power plant and by experiments of the contour control of an articulated robot arm.     

Electronically controlled high-speed wavelength-tunable femtosecondsoliton pulse generation using acoustooptic modulator

The compact system of electronically controlled high-speed wavelength-tunable femtosecond (fs) soliton pulse generation is realized for the first time using a passively mode-locked fs fiber laser, a polarization maintaining optical fiber, and an acoustooptic (A-O) modulator. The wavelength of the output pulses can be continuously tuned simply by controlling the input voltage into the A-O modulator. The wavelength of the soliton pulses can be changed at 2.5-μs intervals. Wavelength stabilization, time division wavelength multiplexed soliton pulse generation, and a wavelength scanner have been demonstrated     

Dynamic nuclear self-polarization of Ⅲ-Ⅴ semiconductors

Ⅲ-Ⅴ semiconductors exhibit dynamic nuclear self-polarization (DYNASP) owing to the contact hyperfine interaction (HFI) between optically excited conduction electrons and lattice nuclei.In the self-polarization process at a low temperature,electron spin state and the nuclear polarization (magnetization) exchange a positive feedback,increasing energy splitting of the conduction electron states,thereby a large nuclear polarization.This phenomenon was theoretically predicted previously for conduction electrons excited linearly and elliptically polarized light.The polarization of the conduction electrons was represented by a parameter α in a formula for nuclear polarization (Eq.(9) in Ref.[1]);however,the effect of external magnetic fields on the nuclear polarization was not considered.Therefore,this study introduces this effect by further extending the previous studies.Herein,α'represents the combination of the effects of elliptically polarized electrons and an external magnetic field,which is used in the equations presented in previous studies.When α'=0,a large nuclear polarization is obtained below critical temperature Tc,but no polarization occurs above Tc.When α'＞ 0,the nuclear polarization is enhanced above Tc.Below Tc,the nuclear polarization follows a hysteresis curve when α'is partially manipulated by adjusting the degree of the polarization of the exciting laser.     

The Nanometer-Sized Eutectic Structure of Si/CrSi<Subscript>2</Subscript> Thermoelectric Materials Fabricated by Rapid Solidification

Nanostructuring is known to be an effective method to improve thermoelectric performance but, generally, it requires complex procedures and much labor. In the present study, self-assembled nanometer-sized composite structures of silicon (Si) and chromium disilicide (CrSi₂) were easily fabricated by the rapid solidification of a melt with a eutectic composition. Ribbon-like samples were obtained with a dominant nanostructure of fine aligned lamellae with a spacing range of 20–35 nm. The thermoelectric power factor of the ribbon was observed to be 1.2 mW/mK² at room temperature and reached 3.0 mW/mK² at 773 K. The thermal conductivity was 65% lower than that of a bulk eutectic sample. The results suggest that this method is promising for fabricating an effective nanostructure for thermoelectric performance.     

A new wastewater treatment technology for mixed acid drainagecontaining fluorine

A new environment-friendly wastewater treatment technology was developed for the treatment of mixed acid drainage containing fluorine. The ordinary wastewater system using “slaked lime” is ineffective at removing fluorine; besides, it cannot decompose “hard-type surfactants” in the wastewater, so the amount of generated sludge and the quality of treated wastewater are not at the satisfactory level. This newly developed wastewater system uses microorganisms and calcium carbonate to treat the industrial wastewater that contains strong chemicals such as acids, bases, and hydrogen peroxide. By changing the structure and construction of the treatment tanks, it is possible to treat calcium carbonate and microorganisms at the same time and decompose hard-type surfactants. This greatly contributes to improved water quality, saves resources, and reduces greenhouse gas emissions to one third those of the old system     

A high fill factor and progressive scan PtSi Schottky-barrier IR-CCD image sensor using new wiring technology

A back surface illuminated 130/spl times/130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using new wiring technology, referred to as CLOSE Wiring, CLOSE Wiring, designed to effectively utilize the space over the SB photodiodes, brings about flexibility in clock line designing, high fill factor, and large charge handling capability in a vertical CCD (VCCD). This image sensor uses a progressive scanned interline-scheme, and has a 64.4% fill factor in a 30 /spl mu/m/spl times/30 /spl mu/m pixel, a 3.9 mm/spl times/3.9 mm image area, and a 5.5 mm/spl times/5.5 mm chip size. The charge handling capability for the 3.3 /spl mu/m wide VCCD achieves 9.8/spl times/10/sup 5/ electrons, The noise equivalent temperature difference obtained was 0.099 K for operation at 120 frames/sec with a 50 mm f/1.3 lens.<>     

Demonstration of 100 Gbps optical packet switching using header processor based on 48-bit longest prefix matching

Wire-rate packet processing and its energy saving for over 100 Gbps speed of line are major issues to be resolved in optical packet switching (OPS) networks. For that purpose, we newly develop a high-speed, deterministic-latency electronic header processor based on longest prefix matching (LPM) for searching optical packet destination addresses (OP-DAs). This paper reports the successful experimental results of electronic header processing based on LPM search of up to 48 bits and optical switching of 100 Gbps optical packets by the use of the header processor. We demonstrate 48-bit LPM-capable optical packet switching. We also demonstrate IP packet transfer and 32-bit LPM-capable optical packet switching. In the latter demonstration, the 32-bit OP-DA of optical packets is directly copied from the 32-bit destination address of Internet Protocol version 4 (IPv4) packets. This result indicates that OPS networks can be deployed with electronic IP networks by the use of integrated network operation between OPS and IP networks.