Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications

Molecular beam epitaxy has been employed to deposit HgCdTe infrared detector structures on Si(112) substrates with performance at 125K that is equivalent to detectors grown on conventional CdZnTe substrates. The detector structures are grown on Si via CdTe(112)B buffer layers, whose structural properties include x-ray rocking curve full width at half maximum of 63 arc-sec and near-surface etch pit density of 3–5 × 10⁵ cm⁻² for 9 μm thick CdTe films. HgCdTe p⁺-on-n device structures were grown by molecular beam epitaxy (MBE) on both bulk CdZnTe and Si with 125K cutoff wavelengths ranging from 3.5 to 5 μm. External quantum efficiencies of 70%, limited only by reflection loss at the uncoated Si-vacuum interface, were achieved for detectors on Si. The current-voltage (I-V) characteristics of MBE-grown detectors on CdZnTe and Si were found to be equivalent, with reverse breakdown voltages well in excess of 700 mV. The temperature dependences of the I-V characteristics of MBE-grown diodes on CdZnTe and Si were found to be essentially identical and in agreement with a diffusion-limited current model for temperatures down to 110K. The performance of MBE-grown diodes on Si is also equivalent to that of typical liquid phase epitaxy-grown devices on CdZnTe with R₀A products in the 10⁶–10⁷ Θ-cm² range for 3.6 μm cutoff at 125K and R₀A products in the 10⁴–10⁵ Θ-cm² range for 4.7 μm cutoff at 125K.     

A real-time motion estimation and compensation LSI with wide searchrange for MPEG2 video encoding

This paper presents a motion estimation and compensation large scale integration (LSI) for the MPEG2 standard. An embedded RISC processor and special hardware modules enable the LSI to achieve a sufficient ability to perform real-time operation and provide the availability to realize many kinds of block matching algorithms. Using a three-step hierarchical telescopic search algorithm, a single chip accomplishes real-time motion estimation with search ranges of ±32.5×±32.5 pixels for motion vectors. The chip was fabricated using 0.5-μm CMOS technology and has an area of 16.5×16.5 mm² and 2.0 M transistors     

All solid-state battery with sulfur electrode and thio-LISICON electrolyte

A high-capacity type of all solid-state battery was developed using sulfur electrode and the thio-LISICON electrolyte. New nano-composite of sulfur and acetylene black (AB) with an average particle size of 1–10 nm was fabricated by gas-phase mixing and showed a reversible capacity of 900 mAh g⁻¹ at a current density of 0.013 mA cm⁻².     

Optical phase-locked loop with fibre lasers for low phase noise millimetre-wave signal generation

An optical phase-locked loop (OPLL) using two continuous-wave commercial fibre lasers was implemented by means of pump power modulation. Although the 3 dB bandwidth of the frequency modulation transfer function of a fibre laser was measured to be approximately 6 kHz, the control bandwidth of the loop was extended by a factor of 10 using electronic phase-lead compensation. The operation of our OPLL was stable with a residual RMS phase fluctuation of 57 mrad. By using this technique, the photonic generation of millimetre-wave signals up to 64 GHz was successfully demonstrated.     

Enhanced Hole‐Transporting Behavior of Discotic Liquid‐Crystalline Physical Gels

Discotic liquid‐crystalline (LC) physical gels have been prepared by combining the self‐assembled fibers of a low‐molecular‐weight gelator and semiconducting LC triphenylene derivatives. The hole mobilities of the discotic LC physical gels measured by a time‐of‐flight method become higher than those of LC triphenylenes alone. The introduction of the finely dispersed networks of the gelator in the hexagonal columnar phases may affect the molecular dynamics of the liquid crystals, resulting in the enhancement of hole transporting behavior in the LC gel state.     

Numerical Analysis of the Boundary Scattering Effect on Transport Properties in Bi-Sb Nanowires

In this study, we have numerically analyzed the transport properties of Bi-Sb nanowires, taking into account wire boundary scattering. Wire boundary scattering slightly decreased the Seebeck coefficient of Bi-Sb nanowires. This effect is due to the observation that boundary scattering and the mobility ratio of L-point electrons to T-point holes in the nanowires are smaller than those in bulk Bi-Sb because the wire boundary scattering suppresses the mobilities of L-point electrons and heavy holes. The largest Seebeck coefficient for all wire diameters was obtained when the Sb concentration was 5 at.%. The effective mass approached zero near 5 at.% Sb, and the small effective mass led to a large subband shift in each band. Thus, a small effective mass enhances the quantum effect at a fixed wire diameter, even if wire boundary scattering is taken into account.     

Abrupt changes in cross polarizations observed during thunder

Abrupt changes in the cross-polarization discrimination (XPD) and cross-polar phase were observed in cross-polarization measurements at 4, 6, and 11 GHz on propagation paths with low elevation angles. These abrupt changes were always observed during thunder, though exact time-to-time correspondence with lightning strokes was not clear in the measurement. In most cases, these sudden changes occurred in the direction in which the distortion of polarization ellipse increases, and the rate of change in XPD was much faster than rain-induced depolarizations by an order of magnitude. Based on the simultaneous measurement of circular and linear polarizations at 11 GHz, it was also found that the differential phase shift component suddenly increased to as large as20degto40degupon occurrence of these XPD changes, which confirms that this phenomenon is attributed to the effect of ice particles.